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Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1988) Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy. Applied Physics Letters, 52 (11). 895-897 doi:10.1063/1.99265

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Reference TypeJournal (article/letter/editorial)
TitleSi/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy
JournalApplied Physics Letters
AuthorsTatsumi, ToruAuthor
Hirayama, HiroyukiAuthor
Aizaki, NaoakiAuthor
Year1988 (March 14)Volume52
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.99265Search in ResearchGate
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Mindat Ref. ID8482509Long-form Identifiermindat:1:5:8482509:6
GUID0
Full ReferenceTatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1988) Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy. Applied Physics Letters, 52 (11). 895-897 doi:10.1063/1.99265
Plain TextTatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1988) Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy. Applied Physics Letters, 52 (11). 895-897 doi:10.1063/1.99265
In(1988, March) Applied Physics Letters Vol. 52 (11) AIP Publishing

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Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1989) Si particle density reduction in Si molecular beam epitaxy using a deflection electrode. Applied Physics Letters, 54 (7). 629-631 doi:10.1063/1.100900
Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1987) Boron heavy doping for Si molecular beam epitaxy using a HBO2source. Applied Physics Letters, 50 (18). 1234-1236 doi:10.1063/1.97919
Hirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1988) Gas source silicon molecular beam epitaxy using disilane. Applied Physics Letters, 52 (18). 1484-1486 doi:10.1063/1.99106
Hirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1988) Selective growth condition in disilane gas source silicon molecular beam epitaxy. Applied Physics Letters, 52 (26). 2242-2243 doi:10.1063/1.99654
Hirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1988) Stress reduction and doping efficiency in B‐ and Ge‐doped silicon molecular beam epitaxy films. Applied Physics Letters, 52 (16). 1335-1337 doi:10.1063/1.99151
Hirayama, Hiroyuki, Tatsumi, Toru, Ogura, Atsushi, Aizaki, Naoaki (1987) Gas source silicon molecular beam epitaxy using silane. Applied Physics Letters, 51 (26). 2213-2215 doi:10.1063/1.99009
Hirayama, Hiroyuki, Tatsumi, Toru (1989) Hydrogen passivation effect in Si molecular beam epitaxy. Applied Physics Letters, 54 (16). 1561-1563 doi:10.1063/1.101313
Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1988) Surface Segregation at Boron Planar Doping in Silicon Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l954
Hirayama, Hiroyuki, Tatsumi, Toru (1989) High doping of phosphorus in Si using gas source molecular beam epitaxy. Applied Physics Letters, 55 (2). 131-133 doi:10.1063/1.102122
Hirayama, Hiroyuki, Hiroi, Masayuki, Koyama, Kazuhisa, Tatsumi, Toru (1990) Heterojunction bipolar transistor fabrication using Si1−xGexselective epitaxial growth by gas source silicon molecular beam epitaxy. Applied Physics Letters, 56 (26). 2645-2647 doi:10.1063/1.102863
Hirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1989) Disilane gas source Si-MBE. Journal of Crystal Growth, 95 (1). 476-479 doi:10.1016/0022-0248(89)90446-6
 
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