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Yu, Peter Y., Li, Ming‐fu (1988) Comment on ‘‘New evidence of small lattice relaxation for theDXcenter in AlxGa1−xAs’’ [Appl. Phys. Lett.51, 1358 (1987)]. Applied Physics Letters, 52 (19). 1645 doi:10.1063/1.99061

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Reference TypeJournal (article/letter/editorial)
TitleComment on ‘‘New evidence of small lattice relaxation for theDXcenter in AlxGa1−xAs’’ [Appl. Phys. Lett.51, 1358 (1987)]
JournalApplied Physics Letters
AuthorsYu, Peter Y.Author
Li, Ming‐fuAuthor
Year1988 (May 9)Volume52
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.99061Search in ResearchGate
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Mindat Ref. ID8482967Long-form Identifiermindat:1:5:8482967:6
GUID0
Full ReferenceYu, Peter Y., Li, Ming‐fu (1988) Comment on ‘‘New evidence of small lattice relaxation for theDXcenter in AlxGa1−xAs’’ [Appl. Phys. Lett.51, 1358 (1987)]. Applied Physics Letters, 52 (19). 1645 doi:10.1063/1.99061
Plain TextYu, Peter Y., Li, Ming‐fu (1988) Comment on ‘‘New evidence of small lattice relaxation for theDXcenter in AlxGa1−xAs’’ [Appl. Phys. Lett.51, 1358 (1987)]. Applied Physics Letters, 52 (19). 1645 doi:10.1063/1.99061
In(1988, May) Applied Physics Letters Vol. 52 (19) AIP Publishing

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Talwar, D. N., Manasreh, M. O., Suh, K. S., Covington, B. C. (1987) New evidence of small lattice relaxation for theDXcenter in AlxGa1−xAs. Applied Physics Letters, 51 (17). 1358-1360 doi:10.1063/1.98678
Tang, C. L., Walmsley, I. A., Wise, F. W. (1988) Comment on ‘‘Femtosecond dynamics of highly excited carriers in AlxGa1−xAs’’ [Appl. Phys. Lett. 51, 161 (1987)]. Applied Physics Letters, 52 (10). 850-851 doi:10.1063/1.99637
Porod, Wolfgang (1988) Comment on ‘‘Energy requirements in communication’’ [Appl. Phys. Lett.51, 2056 (1987)]. Applied Physics Letters, 52 (25). 2191 doi:10.1063/1.99531
Silberberg, Yaron, Stegeman, George I. (1987) Response to ‘‘Comment on ‘Nonlinear coupling of waveguide modes’ ’’ [Appl. Phys. Lett.51, 1645 (1987)]. Applied Physics Letters, 51 (20). 1645 doi:10.1063/1.98584
Vatarescu, A. (1987) Comment on ‘‘Nonlinear coupling of waveguide modes’’ [Appl. Phys. Lett.50, 801 (1987)]. Applied Physics Letters, 51 (20). 1645 doi:10.1063/1.98583
People, R. (1988) Comment on ‘‘Relaxation of strained‐layer semiconductor structures via plastic flow’’ [Appl. Phys. Lett. 51, 1325 (1987); 52, 852(E) (1988)]. Applied Physics Letters, 53 (12). 1127 doi:10.1063/1.100035
d’Heurle, F. M., Thomas, O. (1988) Comment on ‘‘Evidence for Si diffusion through epitaxial NiSi2grown on Si(111)’’ [Appl. Phys. Lett.50, 1257 (1987)]. Applied Physics Letters, 52 (26). 2269 doi:10.1063/1.99772
Dodson, Brian W., Tsao, Jeffrey. Y. (1988) Erratum: Relaxation of strained‐layer semiconductor structures via plastic flow [Appl. Phys. Lett. 51, 1325 (1987)]. Applied Physics Letters, 52 (10). 852 doi:10.1063/1.99658
Landauer, Rolf (1988) Response to ‘‘Comment on ‘Energy requirements in communication’ ’’ [Appl. Phys. Lett.52, 2191 (1988)]. Applied Physics Letters, 52 (25). 2191-2192 doi:10.1063/1.99532
Kubena, R. L., Ward, J. W. (1988) Comment on ‘‘Current‐density profiles for a Ga+ion microprobe and their lithographic implications’’ [Appl. Phys. Lett.51, 1960 (1987)]. Applied Physics Letters, 52 (24). 2089 doi:10.1063/1.99566
Li, Ming‐fu, Yu, Peter Y., Weber, E. R. (1992) Comment on ‘‘Occupancy of theDXCenter in N‐Al0.32Ga0.68As under uniaxial stress’’. Applied Physics Letters, 60 (11). 1404 doi:10.1063/1.107305
 
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