Vote for your favorite mineral in #MinCup25! - Baryte vs. Hematite
It's a heavyweight match between industrial powerhouses as soft #baryte competes against rusty red #hematite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Baird, R. J., Potter, T. J., Kothiyal, G. P., Bhattacharya, P. K. (1988) Indium diffusion in the chemical potential gradient at an In0.53Ga0.47As/In0.52Al0.48As interface. Applied Physics Letters, 52 (24). 2055-2057 doi:10.1063/1.99579

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleIndium diffusion in the chemical potential gradient at an In0.53Ga0.47As/In0.52Al0.48As interface
JournalApplied Physics Letters
AuthorsBaird, R. J.Author
Potter, T. J.Author
Kothiyal, G. P.Author
Bhattacharya, P. K.Author
Year1988 (June 13)Volume52
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.99579Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8483362Long-form Identifiermindat:1:5:8483362:4
GUID0
Full ReferenceBaird, R. J., Potter, T. J., Kothiyal, G. P., Bhattacharya, P. K. (1988) Indium diffusion in the chemical potential gradient at an In0.53Ga0.47As/In0.52Al0.48As interface. Applied Physics Letters, 52 (24). 2055-2057 doi:10.1063/1.99579
Plain TextBaird, R. J., Potter, T. J., Kothiyal, G. P., Bhattacharya, P. K. (1988) Indium diffusion in the chemical potential gradient at an In0.53Ga0.47As/In0.52Al0.48As interface. Applied Physics Letters, 52 (24). 2055-2057 doi:10.1063/1.99579
In(1988, June) Applied Physics Letters Vol. 52 (24) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Baird, R. J., Potter, T. J., Lai, R., Kothiyal, G. P., Bhattacharya, P. K. (1988) Impurity‐induced layer disordering of In0.53Ga0.47As/In0.52Al0.48As heterostructures. Applied Physics Letters, 53 (23). 2302-2304 doi:10.1063/1.100260
Seo, K. S., Bhattacharya, P. K., Kothiyal, G. P., Hong, S. (1986) Interdiffusion and wavelength modification in In0.53Ga0.47As/ In0.52Al0.48As quantum wells by lamp annealing. Applied Physics Letters, 49 (15). 966-968 doi:10.1063/1.97497
Lai, R., Pamulapati, J., Bhattacharya, P. K., Baird, R. J. (1991) Low‐loss, single‐mode In0.53Ga0.47As/In0.52Al0.48As/InP optical waveguides fabricated by Zn‐induced impurity‐induced layer disordering. Journal of Applied Physics, 70 (9). 5136-5137 doi:10.1063/1.348989
Oh, J. E., Mehdi, I., Pamulapati, J., Bhattacharya, P. K., Haddad, G. I. (1989) The effect of molecular‐beam‐epitaxial growth conditions on the electrical characteristics of In0.52Al0.48As/In0.53Ga0.47As resonant tunneling diodes. Journal of Applied Physics, 65 (2). 842-845 doi:10.1063/1.343075
Gupta, S., Davis, L., Bhattacharya, P. K. (1992) Optical time‐of‐flight measurement of carrier transport in GaAs/AlxGa1−xAs and In0.53Ga0.47As/In0.52Al0.48As multiquantum wells. Applied Physics Letters, 60 (12). 1456-1458 doi:10.1063/1.107269
Nygren, E., Pogany, A. P., Short, K. T., Williams, J. S., Elliman, R. G., Poate, J. M. (1988) Impurity‐stimulated crystallization and diffusion in amorphous silicon. Applied Physics Letters, 52 (6). 439-441 doi:10.1063/1.99436
Gupta, S., Bhattacharya, P. K., Pamulapati, J., Mourou, G. (1990) Subpicosecond photoresponse of carriers in low‐temperature molecular beam epitaxial In0.52Al0.48As/InP. Applied Physics Letters, 57 (15). 1543-1545 doi:10.1063/1.103347
Kuang, J. B., Tasker, P. J., Chen, Y. K., Wang, G. W., Eastman, L. F., Aina, O. A., Hier, H., Fathimulla, A. (1989) Submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy. Applied Physics Letters, 54 (12). 1136-1138 doi:10.1063/1.100740
Karve, G., Wang, S., Ma, F., Li, X., Campbell, J. C., Ispasoiu, R. G., Bethune, D. S., Risk, W. P., Kinsey, G. S., Boisvert, J. C., Isshiki, T. D., Sudharsanan, R. (2005) Origin of dark counts in In0.53Ga0.47As∕In0.52Al0.48As avalanche photodiodes operated in Geiger mode. Applied Physics Letters, 86 (6). 63505pp. doi:10.1063/1.1861498
Lai, R., Bhattacharya, P. K. (1990) Performance characteristics of In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors realized by two‐step epitaxy: Effects of molecular‐beam epitaxial regrowth. Journal of Applied Physics, 67 (9). 4345-4348 doi:10.1063/1.344952
Poole, P. J., Lefebvre, J., Fraser, J. (2003) Spatially controlled, nanoparticle-free growth of InP nanowires. Applied Physics Letters, 83 (10). 2055-2057 doi:10.1063/1.1608486
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Š OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 19, 2025 16:40:37
Go to top of page