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Rosner, S. J., Amano, Jun, Lee, J. W., Fan, J. C. C. (1988) Initial growth of gallium arsenide on silicon by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (12). 1101-1103 doi:10.1063/1.100033

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Reference TypeJournal (article/letter/editorial)
TitleInitial growth of gallium arsenide on silicon by organometallic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsRosner, S. J.Author
Amano, JunAuthor
Lee, J. W.Author
Fan, J. C. C.Author
Year1988 (September 19)Volume53
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100033Search in ResearchGate
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Mindat Ref. ID8484154Long-form Identifiermindat:1:5:8484154:4
GUID0
Full ReferenceRosner, S. J., Amano, Jun, Lee, J. W., Fan, J. C. C. (1988) Initial growth of gallium arsenide on silicon by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (12). 1101-1103 doi:10.1063/1.100033
Plain TextRosner, S. J., Amano, Jun, Lee, J. W., Fan, J. C. C. (1988) Initial growth of gallium arsenide on silicon by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (12). 1101-1103 doi:10.1063/1.100033
In(1988, September) Applied Physics Letters Vol. 53 (12) AIP Publishing

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Tejwani, M. J., Kanber, H., Paine, B. M., Whelan, J. M. (1988) Growth and diffusion of abrupt beryllium‐doped profiles in gallium arsenide by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (24). 2411-2413 doi:10.1063/1.100412
Palmer, J. E., Burns, G., Fonstad, C. G., Thompson, C. V. (1989) Effect of As4overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy. Applied Physics Letters, 55 (10). 990-992 doi:10.1063/1.101698
De Boeck, J., Liang, J. B., Deneffe, K., Vanhellemont, J., Arent, D. J., Van Hoof, C., Mertens, R., Borghs, G. (1988) Structural characterization of embedded gallium arsenide on silicon by molecular beam epitaxy. Applied Physics Letters, 53 (12). 1071-1073 doi:10.1063/1.100069
Choi, H. K., Lee, J. W., Salerno, J. P., Connors, M. K., Tsaur, B‐Y., Fan, J. C. C. (1988) Low‐threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy. Applied Physics Letters, 52 (14). 1114-1115 doi:10.1063/1.99178
Zinke‐Allmang, M., Feldman, L. C., Nakahara, S. (1988) Initial stages of epitaxial growth: Gallium arsenide on silicon. Applied Physics Letters, 52 (2). 144-146 doi:10.1063/1.99032
Ghosh, C., Layman, R. L. (1984) Selective area growth of gallium arsenide by metalorganic vapor phase epitaxy. Applied Physics Letters, 45 (11). 1229-1231 doi:10.1063/1.95073
Enquist, P., Hutchby, J. A., de Lyon, T. J. (1988) Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy. Journal of Applied Physics, 63 (9). 4485-4493 doi:10.1063/1.340143
Jun, S. W., Fetzer, C. M., Lee, R. T., Shurtleff, J. K., Stringfellow, G. B. (2000) Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy. Applied Physics Letters, 76 (19). 2716-2718 doi:10.1063/1.126453
Lamelas, F. J., Fuoss, P. H., Imperatori, P., Kisker, D. W., Stephenson, G. B., Brennan, S. (1992) Gallium arsenide surface reconstructions during organometallic vapor‐phase epitaxy. Applied Physics Letters, 60 (21). 2610-2612 doi:10.1063/1.106924
Lee, W. I., Huang, T. C., Guo, J. D., Feng, M. S. (1995) Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy. Applied Physics Letters, 67 (12). 1721-1723 doi:10.1063/1.115028
Zalm, P. C., Marée, P. M. J., Olthof, R. I. J. (1985) Silicon molecular beam epitaxy on gallium arsenide. Applied Physics Letters, 46 (6). 597-599 doi:10.1063/1.95552
 
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