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Seager, C. H., Anderson, R. A. (1988) Real‐time observations of hydrogen drift and diffusion in silicon. Applied Physics Letters, 53 (13). 1181-1183 doi:10.1063/1.100015

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Reference TypeJournal (article/letter/editorial)
TitleReal‐time observations of hydrogen drift and diffusion in silicon
JournalApplied Physics Letters
AuthorsSeager, C. H.Author
Anderson, R. A.Author
Year1988 (September 26)Volume53
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.100015Search in ResearchGate
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Mindat Ref. ID8484230Long-form Identifiermindat:1:5:8484230:3
GUID0
Full ReferenceSeager, C. H., Anderson, R. A. (1988) Real‐time observations of hydrogen drift and diffusion in silicon. Applied Physics Letters, 53 (13). 1181-1183 doi:10.1063/1.100015
Plain TextSeager, C. H., Anderson, R. A. (1988) Real‐time observations of hydrogen drift and diffusion in silicon. Applied Physics Letters, 53 (13). 1181-1183 doi:10.1063/1.100015
In(1988, September) Applied Physics Letters Vol. 53 (13) AIP Publishing

See Also

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Seager, C. H., Anderson, R. A. (1991) Two‐step debonding of hydrogen from boron acceptors in silicon. Applied Physics Letters, 59 (5). 585-587 doi:10.1063/1.105394
Estreicher, S. K., Seager, C. H., Anderson, R. A. (1991) Bistability of donor‐hydrogen complexes in silicon: A mechanism for debonding. Applied Physics Letters, 59 (14). 1773-1775 doi:10.1063/1.106196
Seager, C. H., Anderson, R. A., Brice, D. K. (1990) Insitumeasurements of hydrogen motion and bonding in silicon. Journal of Applied Physics, 68 (7). 3268-3284 doi:10.1063/1.346378
Seager, C. H., Anderson, R. A. (1993) Reversible changes of the charge state of donor/hydrogen complexes initiated by hole capture in silicon. Applied Physics Letters, 63 (11). 1531-1533 doi:10.1063/1.110739
Seager, C. H., Anderson, R. A. (1996) Charge state control of hydrogenation in silicon. Journal of Applied Physics, 80 (1). 151-155 doi:10.1063/1.362825
Seager, C. H., Myers, S. M., Wright, A. F., Koleske, D. D., Allerman, A. A. (2002) Drift, diffusion, and trapping of hydrogen in p-type GaN. Journal of Applied Physics, 92 (12). 7246-7252 doi:10.1063/1.1520719
Wijaranakula, W., Matlock, J. H., Mollenkopf, H. (1988) Oxygen diffusion in antimony‐doped silicon. Applied Physics Letters, 53 (12). 1068-1070 doi:10.1063/1.100068
Chen, C. H., McCann, M. P., Phillips, R. C. (1988) Real‐time monitoring of laser ablation deposition of superconductors by fluorescence and secondary‐ion spectra. Applied Physics Letters, 53 (26). 2701-2703 doi:10.1063/1.100550
Hocine, S., Mathiot, D. (1988) Titanium diffusion in silicon. Applied Physics Letters, 53 (14). 1269-1271 doi:10.1063/1.100446
Seager, C. H., Anderson, R. A., Estreicher, S. K. (1995) Comment on “Inverted Order of Acceptor and Donor Levels of Monatomic Hydrogen in Silicon”. Physical Review Letters, 74 (22). 4565 doi:10.1103/physrevlett.74.4565
Orlowski, M. (1988) Unified model for impurity diffusion in silicon. Applied Physics Letters, 53 (14). 1323-1325 doi:10.1063/1.99975
 
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