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Vos, M., Xu, F., Weaver, J. H., Cheng, H. (1988) Influence of metal interlayers on Schottky barrier formation for Au/ZnSe (100) and Al/ZnSe (100). Applied Physics Letters, 53 (16). 1530-1532 doi:10.1063/1.99947

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of metal interlayers on Schottky barrier formation for Au/ZnSe (100) and Al/ZnSe (100)
JournalApplied Physics Letters
AuthorsVos, M.Author
Xu, F.Author
Weaver, J. H.Author
Cheng, H.Author
Year1988 (October 17)Volume53
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.99947Search in ResearchGate
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Mindat Ref. ID8484477Long-form Identifiermindat:1:5:8484477:2
GUID0
Full ReferenceVos, M., Xu, F., Weaver, J. H., Cheng, H. (1988) Influence of metal interlayers on Schottky barrier formation for Au/ZnSe (100) and Al/ZnSe (100). Applied Physics Letters, 53 (16). 1530-1532 doi:10.1063/1.99947
Plain TextVos, M., Xu, F., Weaver, J. H., Cheng, H. (1988) Influence of metal interlayers on Schottky barrier formation for Au/ZnSe (100) and Al/ZnSe (100). Applied Physics Letters, 53 (16). 1530-1532 doi:10.1063/1.99947
In(1988, October) Applied Physics Letters Vol. 53 (16) AIP Publishing

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Anderson, Steven G., Xu, F., Vos, M., Weaver, J. H., Cheng, H. (1989) Schottky-barrier formation and atomic mixing at Au/ZnSe(100) and Co/ZnSe(100) interfaces with Co and Au interlayers. Physical Review B, 39 (8) 5079-5090 doi:10.1103/physrevb.39.5079
Xu, F., Vos, M., Weaver, J. H., Cheng, H. (1988) Interface dipoles, surface work functions, and Schottky-barrier formation at Au/ZnSe(100) interfaces. Physical Review B, 38 (18) 13418-13421 doi:10.1103/physrevb.38.13418
Vos, M., Xu, F., Anderson, Steven G., Weaver, J. H., Cheng, H. (1989) Photoemission studies of interface chemistry and Schottky barriers for ZnSe(100) with Ti, Co, Cu, Pd, Ag, Au, Ce, and Al. Physical Review B, 39 (15) 10744-10752 doi:10.1103/physrevb.39.10744
Xu, F., Vos, M., Sullivan, J. P., Atanasoska, Lj., Anderson, Steven G., Weaver, J. H., Cheng, H. (1988) Band-gap discontinuities for Ge/ZnSe(100) and Si/ZnSe(100): A photoemission study. Physical Review B, 38 (11) 7832-7835 doi:10.1103/physrevb.38.7832
Vos, M., Aldao, C. M., Aastuen, D. J. W., Weaver, J. H. (1990) Deposition of Ag ions and neutral atoms on ZnSe(100): Influence of interface morphology on Schottky-barrier formation. Physical Review B, 41 (2) 991-994 doi:10.1103/physrevb.41.991
Aldao, C. M., Vitomirov, I. M., Waddill, G. D., Weaver, J. H. (1988) Interface growth with atoms and preformed clusters: Morphology and Schottky barrier variations for Au/InP(110). Applied Physics Letters, 53 (26). 2647-2649 doi:10.1063/1.100182
Coratger, R., Girardin, C., Beauvillain, J., Dharmadasa, I. M., Samanthilake, A. P., Frost, J. E. F., Prior, K. A., Cavenett, B. C. (1997) Schottky barrier formation at metal/n-ZnSe interfaces and characterization of Au/n-ZnSe by ballistic electron emission microscopy. Journal of Applied Physics, 81 (12). 7870-7875 doi:10.1063/1.365395
Carpenter, M. S., Melloch, M. R., Dungan, T. E. (1988) Schottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs. Applied Physics Letters, 53 (1). 66-68 doi:10.1063/1.100572
Shin, J. W., Lee, J. Y., Jung, J. H., Lee, I., Kim, T. W., Lee, H. S., Kim, M. D. (2007) Formation mechanisms of self-assembled ZnSe nanostructures on Cl-doped ZnSe thin films grown on (100) GaAs substrates. Applied Physics Letters, 91 (14). 141921pp. doi:10.1063/1.2795081
Komeda, T., Stepniak, F., Weaver, J. H. (1991) Schottky‐limit barrier heights for CO‐coated metal clusters on GaAs(110). Applied Physics Letters, 58 (24). 2809-2811 doi:10.1063/1.104743
Lazzarino, M., Scarel, G., Rubini, S., Bratina, G., Sorba, L., Franciosi, A., Berthod, C., Binggeli, N., Baldereschi, A. (1998) Al/ZnSe(100) Schottky-barrier height versus initial ZnSe surface reconstruction. Physical Review B, 57 (16) doi:10.1103/physrevb.57.r9431
 
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