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Hummel, R. E., Yamada, I. (1988) Electromigration behavior of ionized cluster beam deposited aluminum films on SiO2. Applied Physics Letters, 53 (18). 1765-1767 doi:10.1063/1.100478

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Reference TypeJournal (article/letter/editorial)
TitleElectromigration behavior of ionized cluster beam deposited aluminum films on SiO2
JournalApplied Physics Letters
AuthorsHummel, R. E.Author
Yamada, I.Author
Year1988 (October 31)Volume53
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.100478Search in ResearchGate
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Mindat Ref. ID8484602Long-form Identifiermindat:1:5:8484602:6
GUID0
Full ReferenceHummel, R. E., Yamada, I. (1988) Electromigration behavior of ionized cluster beam deposited aluminum films on SiO2. Applied Physics Letters, 53 (18). 1765-1767 doi:10.1063/1.100478
Plain TextHummel, R. E., Yamada, I. (1988) Electromigration behavior of ionized cluster beam deposited aluminum films on SiO2. Applied Physics Letters, 53 (18). 1765-1767 doi:10.1063/1.100478
In(1988, October) Applied Physics Letters Vol. 53 (18) AIP Publishing

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Hummel, R. E., Yamada, I. (1989) Electromigration behavior of aluminum films deposited on silicon by ionized cluster beam and other techniques. Applied Physics Letters, 54 (1). 18-20 doi:10.1063/1.100823
Madden, Michael C. (1989) Structure of ionized cluster beam aluminum deposited on (100) silicon. Applied Physics Letters, 55 (11). 1077-1079 doi:10.1063/1.101709
Hummel, R. E., Breitling, R. M. (1971) ON THE DIRECTION OF ELECTROMIGRATION IN THIN SILVER, GOLD, AND COPPER FILMS. Applied Physics Letters, 18 (9). 373-375 doi:10.1063/1.1653704
Fukushima, K., Yamada, I. (1989) Electrical properties of TiO2films deposited by a reactive‐ionized cluster beam. Journal of Applied Physics, 65 (2). 619-623 doi:10.1063/1.343093
Fukushima, K., Yamada, I., Takagi, T. (1985) Characteristics of TiO2films deposited by a reactive ionized cluster beam. Journal of Applied Physics, 58 (11). 4146-4149 doi:10.1063/1.335546
Hashimoto, H., Levenson, L. L., Usui, H., Yamada, I., Takagi, T. (1988) Optical and structural characteristics of Al2O3films deposited by the reactive ionized cluster beam method. Journal of Applied Physics, 63 (1). 241-244 doi:10.1063/1.340506
Yamada, I., Nagai, I., Horie, M., Takagi, T. (1983) Preparation of doped amorphous silicon films by ionized‐cluster beam deposition. Journal of Applied Physics, 54 (3). 1583-1587 doi:10.1063/1.332141
Yahashi, A., Levenson, L.L., Usui, H., Yamada, I. (1989) The structure zone model applied to ionized cluster beam films: Al on SiO2. Applied Surface Science, 43. 37-42 doi:10.1016/0169-4332(89)90187-6
d'Heurle, F., Ames, I. (1970) ELECTROMIGRATION IN SINGLE‐CRYSTAL ALUMINUM FILMS. Applied Physics Letters, 16 (2). 80-81 doi:10.1063/1.1653108
Yamada, I., Inokawa, H., Takagi, T. (1984) Epitaxial growth of Al on Si(111) and Si(100) by ionized‐cluster beam. Journal of Applied Physics, 56 (10). 2746-2750 doi:10.1063/1.333805
Zuhr, R.A., Haynes, T.E., Galloway, M.D., Tanaka, S., Yamada, A., Yamada, I. (1991) Formation of aluminum films on silicon by ion beam deposition: a comparison with ionized cluster beam deposition. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 308-311 doi:10.1016/0168-583x(91)95229-7
 
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