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Bisberg, J. E., Dabkowski, F. P., Chin, A. K. (1988) Cubic zirconia as a species permeable coating for zinc diffusion in gallium arsenide. Applied Physics Letters, 53 (18). 1729-1731 doi:10.1063/1.99808

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Reference TypeJournal (article/letter/editorial)
TitleCubic zirconia as a species permeable coating for zinc diffusion in gallium arsenide
JournalApplied Physics Letters
AuthorsBisberg, J. E.Author
Dabkowski, F. P.Author
Chin, A. K.Author
Year1988 (October 31)Volume53
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.99808Search in ResearchGate
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Mindat Ref. ID8484639Long-form Identifiermindat:1:5:8484639:0
GUID0
Full ReferenceBisberg, J. E., Dabkowski, F. P., Chin, A. K. (1988) Cubic zirconia as a species permeable coating for zinc diffusion in gallium arsenide. Applied Physics Letters, 53 (18). 1729-1731 doi:10.1063/1.99808
Plain TextBisberg, J. E., Dabkowski, F. P., Chin, A. K. (1988) Cubic zirconia as a species permeable coating for zinc diffusion in gallium arsenide. Applied Physics Letters, 53 (18). 1729-1731 doi:10.1063/1.99808
In(1988, October) Applied Physics Letters Vol. 53 (18) AIP Publishing

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Bisberg, J. E., Chin, A. K., Dabkowski, F. P. (1990) Zinc diffusion in III‐V semiconductors using a cubic‐zirconia protection layer. Journal of Applied Physics, 67 (3). 1347-1351 doi:10.1063/1.345688
Heath, L. S., Bisberg, J. E., Chin, A. K., Meehan, K. (1991) Formation ofp+‐p‐njunctions in gallium arsenide by a two‐step diffusion process. Journal of Applied Physics, 69 (11). 7898-7900 doi:10.1063/1.347475
Schubert, E. F., Stark, J. B., Chiu, T. H., Tell, B. (1988) Diffusion of atomic silicon in gallium arsenide. Applied Physics Letters, 53 (4). 293-295 doi:10.1063/1.99917
Chin, A. K., Satyanarayan, A., Zarrabi, J. H., Vetterling, W. (1988) Cubic zirconia as a high‐quality facet coating for semiconductor lasers. Journal of Applied Physics, 64 (3). 994-999 doi:10.1063/1.341807
Kahen, K. B. (1989) Model for the diffusion of zinc in gallium arsenide. Applied Physics Letters, 55 (20). 2117-2119 doi:10.1063/1.102080
Dabkowski, F. P., Gavrilovic, P., Meehan, K., Stutius, W., Williams, J. E., Shahid, M. A., Mahajan, S. (1988) Disordering of the ordered structure in metalorganic chemical vapor deposition grown Ga0.5In0.5P on (001) GaAs substrates by zinc diffusion. Applied Physics Letters, 52 (25). 2142-2144 doi:10.1063/1.99558
Kahen, K. B., Spence, J. P., Rajeswaran, G. (1991) Mechanism for zinc diffusion inn‐type gallium arsenide. Journal of Applied Physics, 70 (4). 2464-2466 doi:10.1063/1.349401
Gösele, U., Morehead, F. (1981) Diffusion of zinc in gallium arsenide: A new model. Journal of Applied Physics, 52 (7). 4617-4619 doi:10.1063/1.329340
Stagg, J. P. (1982) Limitations in determining hole diffusion lengths from photocurrent measurements in gallium arsenide. Journal of Applied Physics, 53 (5). 3680-3685 doi:10.1063/1.331153
Enquist, P., Hutchby, J. A., de Lyon, T. J. (1988) Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy. Journal of Applied Physics, 63 (9). 4485-4493 doi:10.1063/1.340143
Tejwani, M. J., Kanber, H., Paine, B. M., Whelan, J. M. (1988) Growth and diffusion of abrupt beryllium‐doped profiles in gallium arsenide by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (24). 2411-2413 doi:10.1063/1.100412
 
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