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Janega, P. L., McCaffrey, J., Landheer, D., Buchanan, M., Denhoff, M., Mitchel, D. (1988) Contact resistivity of some magnesium/silicon and magnesium silicide/silicon structures. Applied Physics Letters, 53 (21). 2056-2058 doi:10.1063/1.100496

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Reference TypeJournal (article/letter/editorial)
TitleContact resistivity of some magnesium/silicon and magnesium silicide/silicon structures
JournalApplied Physics Letters
AuthorsJanega, P. L.Author
McCaffrey, J.Author
Landheer, D.Author
Buchanan, M.Author
Denhoff, M.Author
Mitchel, D.Author
Year1988 (November 21)Volume53
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.100496Search in ResearchGate
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Mindat Ref. ID8484924Long-form Identifiermindat:1:5:8484924:5
GUID0
Full ReferenceJanega, P. L., McCaffrey, J., Landheer, D., Buchanan, M., Denhoff, M., Mitchel, D. (1988) Contact resistivity of some magnesium/silicon and magnesium silicide/silicon structures. Applied Physics Letters, 53 (21). 2056-2058 doi:10.1063/1.100496
Plain TextJanega, P. L., McCaffrey, J., Landheer, D., Buchanan, M., Denhoff, M., Mitchel, D. (1988) Contact resistivity of some magnesium/silicon and magnesium silicide/silicon structures. Applied Physics Letters, 53 (21). 2056-2058 doi:10.1063/1.100496
In(1988, November) Applied Physics Letters Vol. 53 (21) AIP Publishing

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Janega, P. L., McCaffrey, J., Landheer, D. (1989) Extremely low resistivity erbium ohmic contacts tonā€type silicon. Applied Physics Letters, 55 (14). 1415-1417 doi:10.1063/1.101611
McKinnon, G. H., McMullin, J. N., Landheer, D., Buchanan, M., Janega, P., Denhoff, M. W. (1989) Selective contacts for silicon-doping superlattices. Canadian Journal of Physics, 67. 326-329 doi:10.1139/p89-057
Landheer, D., Denhoff, M. W., Buchanan, M., Jackman, T. E., McKinnon, G. H., Teo, K. H., Jackman, J. A. (1988) Enhancement of carrier lifetime in siliconā€doping superlattices. Applied Physics Letters, 52 (11). 910-912 doi:10.1063/1.99270
Leith, G. A., Zukotynski, S., Landheer, D., Denhoff, M. W., Buchanan, M. (1989) Excess carrier lifetimes in the silicon doping superlattice. Applied Physics Letters, 54 (16). 1558-1560 doi:10.1063/1.101312
Jackman, T. E., Houghton, D. C., Denhoff, M. W., Kechang, Song, McCaffrey, J., Jackman, J. A., Tuppen, C. G. (1988) Boron redistribution in doping superlattices grown by silicon molecular beam epitaxy using B2O3. Applied Physics Letters, 53 (10). 877-879 doi:10.1063/1.100101
Liu, H. C., Landheer, D., Buchanan, M., Houghton, D. C. (1988) Resonant tunneling in Si/Si1āˆ’xGexdoubleā€barrier structures. Applied Physics Letters, 52 (21). 1809-1811 doi:10.1063/1.99632
Teo, K. H., McMullin, J. N., Landheer, D., Denhoff, M. W. (1990) Small signal ac analysis of a silicon doping superlattice under reverse bias. Journal of Applied Physics, 68 (9). 4674-4680 doi:10.1063/1.346179
Young, Jeff F., Wood, B. M., Liu, H. C., Buchanan, M., Landheer, D., SpringThorpe, A. J., Mandeville, P. (1988) Erratum: Effect of circuit oscillations on the dc currentā€voltage characteristics of doubleā€barrier resonant tunneling structures [Appl. Phys. Lett. 52, 1398 (1988)]. Applied Physics Letters, 53 (8). 719 doi:10.1063/1.100421
Denhoff, M. W., Jackman, T. E., McCaffrey, J. P., Jackman, J. A., Lennard, W. N., Massoumi, G. (1989) Structural properties of ultrathin arsenicā€doped layers in silicon. Applied Physics Letters, 54 (14). 1332-1334 doi:10.1063/1.100707
Tsybeskov, L., Hirschman, K. D., Duttagupta, S. P., Zacharias, M., Fauchet, P. M., McCaffrey, J. P., Lockwood, D. J. (1998) Nanocrystalline-silicon superlattice produced by controlled recrystallization. Applied Physics Letters, 72 (1). 43-45 doi:10.1063/1.120640
Young, Jeff F., Wood, B. M., Liu, H. C., Buchanan, M., Landheer, D., SpringThorpe, A. J., Mandeville, P. (1988) Effect of circuit oscillations on the dc currentā€voltage characteristics of double barrier resonant tunneling structures. Applied Physics Letters, 52 (17). 1398-1400 doi:10.1063/1.99127
 
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