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Sadra, K., Maziar, C. M., Streetman, B. G., Tang, D. S. (1988) A Monte Carlo study of electron‐hole scattering and steady‐state minority‐electron transport in GaAs. Applied Physics Letters, 53 (22). 2205-2207 doi:10.1063/1.100282

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Reference TypeJournal (article/letter/editorial)
TitleA Monte Carlo study of electron‐hole scattering and steady‐state minority‐electron transport in GaAs
JournalApplied Physics Letters
AuthorsSadra, K.Author
Maziar, C. M.Author
Streetman, B. G.Author
Tang, D. S.Author
Year1988 (November 28)Volume53
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.100282Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484961Long-form Identifiermindat:1:5:8484961:6
GUID0
Full ReferenceSadra, K., Maziar, C. M., Streetman, B. G., Tang, D. S. (1988) A Monte Carlo study of electron‐hole scattering and steady‐state minority‐electron transport in GaAs. Applied Physics Letters, 53 (22). 2205-2207 doi:10.1063/1.100282
Plain TextSadra, K., Maziar, C. M., Streetman, B. G., Tang, D. S. (1988) A Monte Carlo study of electron‐hole scattering and steady‐state minority‐electron transport in GaAs. Applied Physics Letters, 53 (22). 2205-2207 doi:10.1063/1.100282
In(1988, November) Applied Physics Letters Vol. 53 (22) AIP Publishing

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Sadra, K., Maziar, C. M., Streetman, B. G., Tang, D. S. (1989) Effects of multiband electron‐hole scattering and hole wave‐function symmetry on minority‐electron transport in GaAs. Journal of Applied Physics, 66 (10). 4791-4800 doi:10.1063/1.343792
Sadra, K., Maziar, C. M., Streetman, B. G. (1989) The role of the split‐off band in electron‐hole energy exchange dynamics in selected III‐V semiconductors. Journal of Applied Physics, 66 (5). 2020-2026 doi:10.1063/1.344340
Osman, M. A., Grubin, H. L. (1987) Monte Carlo investigation of minority‐electron transport in In0.53Ga0.47As. Applied Physics Letters, 51 (22). 1812-1814 doi:10.1063/1.98531
Joshi, R. P., Kriman, A. M., Ferry, D. K. (1990) Monte Carlo study of minority electronic transport in InGaAs: Effects of phonon mode splitting and dynamically screened electron‐hole interactions. Journal of Applied Physics, 68 (8). 4322-4324 doi:10.1063/1.347164
Gwo, S., Smith, A. R., Shih, C. K., Sadra, K., Streetman, B. G. (1992) Scanning tunneling microscopy of GaAs multiplepnjunctions. Applied Physics Letters, 61 (9). 1104-1106 doi:10.1063/1.107682
Dewey, J., Osman, M. A. (1993) Monte Carlo investigation of minority electron transport in silicon. Applied Physics Letters, 62 (2). 187-189 doi:10.1063/1.109334
Taniyama, Hideaki, Tomizawa, Masaaki, Furuta, Tomofumi, Yoshii, Akira (1990) A Monte Carlo study for minority‐electron transport inp‐GaAs. Journal of Applied Physics, 68 (2). 621-626 doi:10.1063/1.346789
Wu, Ernest Yue (1990) A Monte Carlo study of steady‐state electron transport in uncompensated and compensated Al0.25In0.75As. Journal of Applied Physics, 67 (11). 6899-6902 doi:10.1063/1.345081
Glisson, T. H., Hauser, J. R., Littlejohn, M. A., Hess, K., Streetman, B. G., Shichijo, H. (1980) Monte Carlo simulation of real-space electron transfer in GaAs-AlGaAs heterostructures. Journal of Applied Physics, 51 (10). 5445pp. doi:10.1063/1.327500
Jallepalli, S., Rashed, M., Shih, W.-K., Maziar, C. M., Tasch, A. F. (1997) A full-band Monte Carlo model for hole transport in silicon. Journal of Applied Physics, 81 (5). 2250-2255 doi:10.1063/1.364287
O’Leary, Stephen K., Foutz, Brian E., Shur, Michael S., Eastman, Lester F. (2005) Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis. Applied Physics Letters, 87 (22). 222103pp. doi:10.1063/1.2135876
 
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