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Kash, K., Grabbe, P., Nahory, R. E., Scherer, A., Weaver, A., Caneau, C. (1988) Dynamics of photoexcited carriers in micron‐size InP‐InGaAsP etched microstructures probed by picosecond photoluminescence spectroscopy. Applied Physics Letters, 53 (22). 2214-2216 doi:10.1063/1.100285

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Reference TypeJournal (article/letter/editorial)
TitleDynamics of photoexcited carriers in micron‐size InP‐InGaAsP etched microstructures probed by picosecond photoluminescence spectroscopy
JournalApplied Physics Letters
AuthorsKash, K.Author
Grabbe, P.Author
Nahory, R. E.Author
Scherer, A.Author
Weaver, A.Author
Caneau, C.Author
Year1988 (November 28)Volume53
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.100285Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484966Long-form Identifiermindat:1:5:8484966:1
GUID0
Full ReferenceKash, K., Grabbe, P., Nahory, R. E., Scherer, A., Weaver, A., Caneau, C. (1988) Dynamics of photoexcited carriers in micron‐size InP‐InGaAsP etched microstructures probed by picosecond photoluminescence spectroscopy. Applied Physics Letters, 53 (22). 2214-2216 doi:10.1063/1.100285
Plain TextKash, K., Grabbe, P., Nahory, R. E., Scherer, A., Weaver, A., Caneau, C. (1988) Dynamics of photoexcited carriers in micron‐size InP‐InGaAsP etched microstructures probed by picosecond photoluminescence spectroscopy. Applied Physics Letters, 53 (22). 2214-2216 doi:10.1063/1.100285
In(1988, November) Applied Physics Letters Vol. 53 (22) AIP Publishing

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Kash, K., Worlock, J. M., Sturge, M. D., Grabbe, P., Harbison, J. P., Scherer, A., Lin, P. S. D. (1988) Strain‐induced lateral confinement of excitons in GaAs‐AlGaAs quantum well microstructures. Applied Physics Letters, 53 (9). 782-784 doi:10.1063/1.99832
Kash, K., Bhat, R., Mahoney, Derek D., Lin, P. S. D., Scherer, A., Worlock, J. M., Van der Gaag, B. P., Koza, M., Grabbe, P. (1989) Strain‐induced confinement of carriers to quantum wires and dots within an InGaAs‐InP quantum well. Applied Physics Letters, 55 (7). 681-683 doi:10.1063/1.102266
Bhat, R., Hong, W‐P., Caneau, C., Koza, M. A., Nguyen, C‐K., Goswami, S. (1996) InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon‐doped base grown by organometallic chemical vapor deposition. Applied Physics Letters, 68 (7). 985-987 doi:10.1063/1.116120
Kash, K., Scherer, A., Worlock, J. M., Craighead, H. G., Tamargo, M. C. (1986) Optical spectroscopy of ultrasmall structures etched from quantum wells. Applied Physics Letters, 49 (16). 1043-1045 doi:10.1063/1.97466
Deri, R. J., Caneau, C., Colas, E., Schiavone, L. M., Andreadakis, N. C., Song, G. H., Pennings, E. C. M. (1992) Integrated optic mode‐size tapers by selective organometallic chemical vapor deposition of InGaAsP/InP. Applied Physics Letters, 61 (8). 952-954 doi:10.1063/1.107739
Turco, F. S., Tamargo, M. C., Hwang, D. M., Nahory, R. E., Werner, J., Kash, K., Kapon, E. (1990) Growth of InGaAs/InAlAs quantum wells on InP patterned substrates by molecular beam epitaxy. Applied Physics Letters, 56 (1). 72-74 doi:10.1063/1.102655
Degani, J., Leheny, R. F., Nahory, R. E., Heritage, J. P. (1981) Velocity field characteristics of minority carriers (electrons) inp‐In0.53Ga0.47As. Applied Physics Letters, 39 (7). 569-572 doi:10.1063/1.92797
Montie, E. A., Thijs, P. J. A., ’t Hooft, G. W. (1988) Photoluminescence excitation spectroscopy of GaxIn1−xAsyP1−y/InP quantum wells. Applied Physics Letters, 53 (17). 1611-1613 doi:10.1063/1.99927
Tamari, N., Oron, M., Miller, B. I., Ballman, A. A., Nahory, R. E., Martin, R. J., Shtrikman, H., Coldren, L. A. (1982) High quantum efficiency InGaAsP/InP lasers. Applied Physics Letters, 41 (11). 1025-1027 doi:10.1063/1.93398
Etienne, B., Shah, Jagdeep, Leheny, R. F., Nahory, R. E. (1982) Influence of hot carriers on the temperature dependence of threshold in 1.3‐μm InGaAsP lasers. Applied Physics Letters, 41 (11). 1018-1020 doi:10.1063/1.93395
Soole, J. B. D., Scherer, A., LeBlanc, H. P., Andreadakis, N. C., Bhat, R., Koza, M. A. (1991) Monolithic InP/InGaAsP/InP grating spectrometer for the 1.48–1.56 μm wavelength range. Applied Physics Letters, 58 (18). 1949-1951 doi:10.1063/1.105028
 
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