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Steele, A. G., Thewalt, M. L. W., Huffman, J. E. (1988) Epitaxy‐substrate discrimination in the photoluminescence characterization of epitaxial Si. Applied Physics Letters, 53 (8). 666-668 doi:10.1063/1.99845

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxy‐substrate discrimination in the photoluminescence characterization of epitaxial Si
JournalApplied Physics Letters
AuthorsSteele, A. G.Author
Thewalt, M. L. W.Author
Huffman, J. E.Author
Year1988 (August 22)Volume53
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.99845Search in ResearchGate
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Mindat Ref. ID8485712Long-form Identifiermindat:1:5:8485712:9
GUID0
Full ReferenceSteele, A. G., Thewalt, M. L. W., Huffman, J. E. (1988) Epitaxy‐substrate discrimination in the photoluminescence characterization of epitaxial Si. Applied Physics Letters, 53 (8). 666-668 doi:10.1063/1.99845
Plain TextSteele, A. G., Thewalt, M. L. W., Huffman, J. E. (1988) Epitaxy‐substrate discrimination in the photoluminescence characterization of epitaxial Si. Applied Physics Letters, 53 (8). 666-668 doi:10.1063/1.99845
In(1988, August) Applied Physics Letters Vol. 53 (8) AIP Publishing

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Thewalt, M. L. W., Steele, A. G., Huffman, J. E. (1986) Photoluminescence studies of ultrahigh‐purity epitaxial silicon. Applied Physics Letters, 49 (21). 1444-1446 doi:10.1063/1.97297
Steele, A. G., Lenchyshyn, L. C., Thewalt, M. L. W. (1990) Photoluminescence study of nitrogen‐oxygen donors in silicon. Applied Physics Letters, 56 (2). 148-150 doi:10.1063/1.103059
Steiner, T., Thewalt, M. L. W., Koteles, E. S., Salerno, J. P. (1985) Time‐resolved photoluminescence study of molecular beam epitaxial growth induced defect lines in GaAs. Applied Physics Letters, 47 (3). 257-259 doi:10.1063/1.96183
Lacroix, Y., Watkins, S. P., Tran, C. A., Thewalt, M. L. W. (1995) Sharp excitonic photoluminescence from epitaxial InAs. Applied Physics Letters, 66 (9). 1101-1103 doi:10.1063/1.113825
Xiao, X., Liu, C. W., Sturm, J. C., Lenchyshyn, L. C., Thewalt, M. L. W. (1992) Photoluminescence from electron‐hole plasmas confined in Si/Si1−xGex/Si quantum wells. Applied Physics Letters, 60 (14). 1720-1722 doi:10.1063/1.107196
Sturm, J. C., Amour, A. St., Lacroix, Y., Thewalt, M. L. W. (1994) Deep photoluminescence in Si/Si1−xGex/Si quantum wells created by ion implantation and annealing. Applied Physics Letters, 64 (17). 2291-2293 doi:10.1063/1.111647
Steele, A. G., Thewalt, M. L. W. (1989) Photoluminescence studies of defects in annealed Czochralski silicon. Canadian Journal of Physics, 67. 268-274 doi:10.1139/p89-047
St. Amour, A., Sturm, J. C., Lacroix, Y., Thewalt, M. L. W. (1994) Enhancement of high‐temperature photoluminescence in strained Si1−xGex/Si heterostructures by surface passivation. Applied Physics Letters, 65 (26). 3344-3346 doi:10.1063/1.112386
Thewalt, M. L. W., Lightowlers, E. C., Pankove, J. I. (1985) Photoluminescence studies of the neutralization of acceptors in silicon by atomic hydrogen. Applied Physics Letters, 46 (7). 689-691 doi:10.1063/1.95531
Barnett, S. A., Hultman, L., Sundgren, J.‐E., Ronin, F., Rohde, S. (1988) Epitaxial growth of ZrN on Si(100). Applied Physics Letters, 53 (5). 400-402 doi:10.1063/1.99891
Simon, R. W., Platt, C. E., Lee, A. E., Lee, G. S., Daly, K. P., Wire, M. S., Luine, J. A., Urbanik, M. (1988) Low‐loss substrate for epitaxial growth of high‐temperature superconductor thin films. Applied Physics Letters, 53 (26). 2677-2679 doi:10.1063/1.100543
 
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