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Genut, M., Eizenberg, M. (1988) Correlations between electrical properties and interfacial reactions for cobalt‐germanium contacts ton‐type GaAs. Applied Physics Letters, 53 (8). 672-674 doi:10.1063/1.99846

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Reference TypeJournal (article/letter/editorial)
TitleCorrelations between electrical properties and interfacial reactions for cobalt‐germanium contacts ton‐type GaAs
JournalApplied Physics Letters
AuthorsGenut, M.Author
Eizenberg, M.Author
Year1988 (August 22)Volume53
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.99846Search in ResearchGate
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Mindat Ref. ID8485715Long-form Identifiermindat:1:5:8485715:6
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Full ReferenceGenut, M., Eizenberg, M. (1988) Correlations between electrical properties and interfacial reactions for cobalt‐germanium contacts ton‐type GaAs. Applied Physics Letters, 53 (8). 672-674 doi:10.1063/1.99846
Plain TextGenut, M., Eizenberg, M. (1988) Correlations between electrical properties and interfacial reactions for cobalt‐germanium contacts ton‐type GaAs. Applied Physics Letters, 53 (8). 672-674 doi:10.1063/1.99846
In(1988, August) Applied Physics Letters Vol. 53 (8) AIP Publishing

See Also

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Genut, M., Eizenberg, M. (1987) Compound formation at the interface between cobalt thin films and single‐crystal GaAs. Applied Physics Letters, 50 (19). 1358-1360 doi:10.1063/1.97855
Genut, M., Eizenberg, M. (1989) The interaction between thin films of cobalt and GaAs (001) substrates. Journal of Applied Physics, 66 (11). 5456-5464 doi:10.1063/1.343695
Koltin, E., Eizenberg, M. (1992) Ge‐rich Co‐Ge contacts ton‐type GaAs. Journal of Applied Physics, 71 (9). 4604-4611 doi:10.1063/1.350760
Genut, M., Eizenberg, M. (1990) Study of the Co‐Ge/GaAs contact system. Journal of Applied Physics, 68 (5). 2146-2157 doi:10.1063/1.346571
Lahav, A., Eizenberg, M., Komem, Y. (1986) Interfacial reactions between Ni films and GaAs. Journal of Applied Physics, 60 (3). 991-1001 doi:10.1063/1.337343
Lahav, A., Eizenberg, M. (1984) Interfacial reactions of Ni‐Ta thin films on GaAs. Applied Physics Letters, 45 (3). 256-258 doi:10.1063/1.95203
Shih, Yih‐Cheng, Callegari, A., Murakami, M., Wilkie, E. L., Hovel, H. J., Parks, C. C., Childs, K. D. (1988) Interfacial microstructure of tungsten silicide Schottky contacts ton‐type GaAs. Journal of Applied Physics, 64 (4). 2113-2121 doi:10.1063/1.341721
Lahav, A., Eizenberg, M. (1985) Effect of phase separation on the electrical properties of the interface between Ni‐Ta thin films and GaAs substrate. Applied Physics Letters, 46 (4). 430-432 doi:10.1063/1.95602
Nelson, S. F., Jackson, T. N. (1996) Ohmic contacts ton‐type silicon‐germanium. Applied Physics Letters, 69 (23). 3563-3565 doi:10.1063/1.117246
Lau, W. M. (1988) Interfacial reactions between indium and anodic oxide of mercury cadmium telluride. Applied Physics Letters, 53 (22). 2161-2163 doi:10.1063/1.100504
Wang, A. Z., Anderson, W. A., Haase, M. A. (1995) Electrical properties of Schottky contacts toN‐type ZnS0.07Se0.93epilayers. Journal of Applied Physics, 77 (7). 3513-3517 doi:10.1063/1.358645
 
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