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Fujiwara, K., Tsukada, N., Nakayama, T. (1988) Observation of free excitons in room‐temperature photoluminescence of GaAs/AlGaAs single quantum wells. Applied Physics Letters, 53 (8). 675-677 doi:10.1063/1.99847

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Reference TypeJournal (article/letter/editorial)
TitleObservation of free excitons in room‐temperature photoluminescence of GaAs/AlGaAs single quantum wells
JournalApplied Physics Letters
AuthorsFujiwara, K.Author
Tsukada, N.Author
Nakayama, T.Author
Year1988 (August 22)Volume53
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.99847Search in ResearchGate
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Mindat Ref. ID8485717Long-form Identifiermindat:1:5:8485717:4
GUID0
Full ReferenceFujiwara, K., Tsukada, N., Nakayama, T. (1988) Observation of free excitons in room‐temperature photoluminescence of GaAs/AlGaAs single quantum wells. Applied Physics Letters, 53 (8). 675-677 doi:10.1063/1.99847
Plain TextFujiwara, K., Tsukada, N., Nakayama, T. (1988) Observation of free excitons in room‐temperature photoluminescence of GaAs/AlGaAs single quantum wells. Applied Physics Letters, 53 (8). 675-677 doi:10.1063/1.99847
In(1988, August) Applied Physics Letters Vol. 53 (8) AIP Publishing

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Fujiwara, K., Kanamoto, K., Tsukada, N., Miyatake, H., Koyama, H. (1989) Photoluminescence line shape of excitons in GaAs single‐quantum wells with and without heterointerface ordering. Journal of Applied Physics, 66 (3). 1488-1491 doi:10.1063/1.344406
Kanamoto, K., Fujiwara, K., Tokuda, Y., Tsukada, N., Ishii, M., Nakayama, T. (1990) Photoluminescence line shape due to arrayed steps at the interfaces of GaAs/AlGaAs single quantum wells grown on vicinal surfaces by molecular beam epitaxy. Applied Surface Science, 41. 526-529 doi:10.1016/0169-4332(89)90115-3
Kanamoto, K., Fujiwara, K., Tokuda, Y., Tsukada, N., Ishii, M., Nakayama, T. (1989) Surface diffusion during MBE growth of GaAs-AlGaAs single quantum wells on vicinal surfaces. Journal of Crystal Growth, 95 (1). 273-276 doi:10.1016/0022-0248(89)90400-4
Nakayama, Masaaki, Ohno, Tatsuya, Furukawa, Yoshiaki (2015) Systematic investigation of effects of exciton–acoustic-phonon scattering on photoluminescence rise times of free excitons in GaAs/Al0.3Ga0.7As single quantum wells. Journal of Applied Physics, 117 (13). 134306pp. doi:10.1063/1.4916982
Jahn, U., Fujiwara, K., Menniger, J., Grahn, H. T. (1995) Cathodoluminescence studies of exciton localization in GaAs‐AlGaAs single quantum wells. Journal of Applied Physics, 77 (1). 396-398 doi:10.1063/1.359336
Fujiwara, K., Tsukada, N., Nakayama, T., Nishino, T. (1987) Linear polarization effects in anisotropic photoemission from GaAs/AlAs short‐period superlattices. Applied Physics Letters, 51 (21). 1717-1719 doi:10.1063/1.98554
Iba, Satoshi, Saito, Hidekazu, Watanabe, Ken, Ohno, Yuzo, Yuasa, Shinji (2015) Growth condition dependence of photoluminescence polarization in (100) GaAs/AlGaAs quantum wells at room temperature. Journal of Applied Physics, 118 (8). 83901pp. doi:10.1063/1.4928325
Tackeuchi, Atsushi, Nishikawa, Yuji, Wada, Osamu (1996) Room‐temperature electron spin dynamics in GaAs/AlGaAs quantum wells. Applied Physics Letters, 68 (6). 797-799 doi:10.1063/1.116536
Yamanaka, K., Fukunaga, T., Tsukada, N., Kobayashi, K. L. I., Ishii, M. (1986) Photocurrent spectroscopy in GaAs/AlGaAs multiple quantum wells under a high electric field perpendicular to the heterointerface. Applied Physics Letters, 48 (13). 840-842 doi:10.1063/1.96685
Fujiwara, Kenzo, Ploog, Klaus (1984) Photoluminescence of GaAs single quantum wells confined by short‐period all‐binary GaAs/AlAs superlattices. Applied Physics Letters, 45 (11). 1222-1224 doi:10.1063/1.95105
Yamanaka, K., Fukunaga, T., Tsukada, N., Kobayashi, K.L.I., Ishii, M. (1986) Photocurrent spectroscopic observation of interband transitions in GaAs-AlGaAs quantum wells under an applied high electric field. Surface Science Letters, 174 (1). doi:10.1016/0167-2584(86)90044-7
 
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