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Duboz, J. Y., Badoz, P. A., Rosencher, E., Henz, J., Ospelt, M., von Känel, H., Briggs, A. (1988) Electrical transport properties in epitaxial codeposited CoSi2layers on 〈111〉 Si. Applied Physics Letters, 53 (9). 788-790 doi:10.1063/1.100560

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Reference TypeJournal (article/letter/editorial)
TitleElectrical transport properties in epitaxial codeposited CoSi2layers on 〈111〉 Si
JournalApplied Physics Letters
AuthorsDuboz, J. Y.Author
Badoz, P. A.Author
Rosencher, E.Author
Henz, J.Author
Ospelt, M.Author
von Känel, H.Author
Briggs, A.Author
Year1988 (August 29)Volume53
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.100560Search in ResearchGate
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Mindat Ref. ID8485744Long-form Identifiermindat:1:5:8485744:8
GUID0
Full ReferenceDuboz, J. Y., Badoz, P. A., Rosencher, E., Henz, J., Ospelt, M., von Känel, H., Briggs, A. (1988) Electrical transport properties in epitaxial codeposited CoSi2layers on 〈111〉 Si. Applied Physics Letters, 53 (9). 788-790 doi:10.1063/1.100560
Plain TextDuboz, J. Y., Badoz, P. A., Rosencher, E., Henz, J., Ospelt, M., von Känel, H., Briggs, A. (1988) Electrical transport properties in epitaxial codeposited CoSi2layers on 〈111〉 Si. Applied Physics Letters, 53 (9). 788-790 doi:10.1063/1.100560
In(1988, August) Applied Physics Letters Vol. 53 (9) AIP Publishing

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Ospelt, M., Henz, J., Flepp, L., von Känel, H. (1988) Schottky barriers of epitaxial NiSi2on Si(111). Applied Physics Letters, 52 (3). 227-229 doi:10.1063/1.99527
Duboz, J. Y., Badoz, P. A., Henz, J., von Känel, H. (1990) Near‐infrared optical properties of CoSi2thin films. Journal of Applied Physics, 68 (5). 2346-2350 doi:10.1063/1.346542
Henz, J., Von Känel, H., Ospelt, M., Wachter, P. (1987) Growth of epitaxial ultrathin continuous CoSi2 layers on Si(111). Surface Science Letters, 189. doi:10.1016/0167-2584(87)90559-7
Henz, J., Von Känel, H., Ospelt, M., Wachter, P. (1987) Growth of epitaxial ultrathin continuous CoSi2 layers on Si(111). Surface Science, 189. 1055-1061 doi:10.1016/s0039-6028(87)80549-6
Henz, J., Hugi, J., Ospelt, M., von Känel, H. (1990) Fabrication and electrical properties of ultrathin CoSi2/Si heterostructures. Surface Science, 228 (1). 9-12 doi:10.1016/0039-6028(90)90246-5
Duboz, J. Y., Badoz, P. A., d’Avitaya, F. Arnaud, Chroboczek, J. A. (1989) Electronic transport properties of epitaxial erbium silicide/silicon heterostructures. Applied Physics Letters, 55 (1). 84-86 doi:10.1063/1.102392
Duboz, J.-Y., Badoz, P.-A., Perio, A., Oberlin, J.-C., Arnaud D'Avitaya, F., Campidelli, Y., Chroboczek, J.A. (1989) Epitaxial erbium silicide films on Si(111) surface: Fabrication, structure, and electrical properties. Applied Surface Science, 38. 171-177 doi:10.1016/0169-4332(89)90533-3
Badoz, P. A., Briggs, A., Rosencher, E., d’Avitaya, F. Arnaud, d’Anterroches, C. (1987) Low‐temperature transport properties of ultrathin CoSi2epitaxial films. Applied Physics Letters, 51 (3). 169-171 doi:10.1063/1.98911
Von Känel, H., Graf, T., Henz, J., Ospelt, M., Wachter, P. (1987) NiSi2 layers grown on Si (111) by MBE and SPE. Journal of Crystal Growth, 81 (1). 470-475 doi:10.1016/0022-0248(87)90435-0
Veuillen, J. Y., Derrien, J., Badoz, P. A., Rosencher, E., d’Anterroches, C. (1987) Co/Si(111) interface: Formation of an initial CoSi2phase at room temperature. Applied Physics Letters, 51 (18). 1448-1450 doi:10.1063/1.98653
Tung, R. T., Batstone, J. L. (1988) Control of pinholes in epitaxial CoSi2layers on Si(111). Applied Physics Letters, 52 (8). 648-650 doi:10.1063/1.99393
 
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