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Schwank, J. R., Fleetwood, D. M. (1988) Effect of post‐oxidation anneal temperature on radiation‐induced charge trapping in metal‐oxide‐semiconductor devices. Applied Physics Letters, 53 (9). 770-772 doi:10.1063/1.99828

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Reference TypeJournal (article/letter/editorial)
TitleEffect of post‐oxidation anneal temperature on radiation‐induced charge trapping in metal‐oxide‐semiconductor devices
JournalApplied Physics Letters
AuthorsSchwank, J. R.Author
Fleetwood, D. M.Author
Year1988 (August 29)Volume53
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.99828Search in ResearchGate
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Mindat Ref. ID8485782Long-form Identifiermindat:1:5:8485782:8
GUID0
Full ReferenceSchwank, J. R., Fleetwood, D. M. (1988) Effect of post‐oxidation anneal temperature on radiation‐induced charge trapping in metal‐oxide‐semiconductor devices. Applied Physics Letters, 53 (9). 770-772 doi:10.1063/1.99828
Plain TextSchwank, J. R., Fleetwood, D. M. (1988) Effect of post‐oxidation anneal temperature on radiation‐induced charge trapping in metal‐oxide‐semiconductor devices. Applied Physics Letters, 53 (9). 770-772 doi:10.1063/1.99828
In(1988, August) Applied Physics Letters Vol. 53 (9) AIP Publishing

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Fleetwood, D. M., Shaneyfelt, M. R., Schwank, J. R. (1994) Estimating oxide‐trap, interface‐trap, and border‐trap charge densities in metal‐oxide‐semiconductor transistors. Applied Physics Letters, 64 (15). 1965-1967 doi:10.1063/1.111757
Fleetwood, D. M. (1990) Radiation‐induced charge neutralization and interface‐trap buildup in metal‐oxide‐semiconductor devices. Journal of Applied Physics, 67 (1). 580-583 doi:10.1063/1.345199
Fleetwood, D. M. (2022) Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices. Applied Physics Letters, 121 (7) 70503 doi:10.1063/5.0105173
Fleetwood, D. M., Reber, R. A., Winokur, P. S. (1992) Trapped‐hole annealing and electron trapping in metal‐oxide‐semiconductor devices. Applied Physics Letters, 60 (16). 2008-2010 doi:10.1063/1.107126
Berger, M., Avni, E., Shappir, J. (1991) Effect of high‐temperature anneal on interface states generation in stressed metal‐oxide‐semiconductor devices. Applied Physics Letters, 58 (6). 598-600 doi:10.1063/1.104598
Fleetwood, D. M., Winokur, P. S., Reber, R. A., Meisenheimer, T. L., Schwank, J. R., Shaneyfelt, M. R., Riewe, L. C. (1993) Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices. Journal of Applied Physics, 73 (10). 5058-5074 doi:10.1063/1.353777
Warren, W. L., Vanheusden, K., Schwank, J. R., Fleetwood, D. M., Winokur, P. S., Devine, R. A. B. (1996) Mechanism for anneal‐induced interfacial charging in SiO2 thin films on Si. Applied Physics Letters, 68 (21). 2993-2995 doi:10.1063/1.116674
Scofield, John H., Trawick, M., Klimecky, P., Fleetwood, D. M. (1991) Correlation between preirradiation channel mobility and radiation‐induced interface‐trap charge in metal‐oxide‐semiconductor transistors. Applied Physics Letters, 58 (24). 2782-2784 doi:10.1063/1.104760
Fleetwood, D. M. (1989) Dual‐transistor method to determine threshold‐voltage shifts due to oxide‐trapped charge and interface traps in metal‐oxide‐semiconductor devices. Applied Physics Letters, 55 (5). 466-468 doi:10.1063/1.101854
Berger, M., Avni, E., Shappir, J. (1989) The effect of aluminum gate thickness on charge trapping in metal‐oxide‐semiconductor devices. Journal of Applied Physics, 66 (10). 4821-4826 doi:10.1063/1.343797
Fleetwood, D. M., Winokur, P. S., Dozier, C. M., Brown, D. B. (1988) Effect of bias on the response of metal‐oxide‐semiconductor devices to low‐energy x‐ray and cobalt‐60 irradiation. Applied Physics Letters, 52 (18). 1514-1516 doi:10.1063/1.99116
 
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