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Reed, A. D., Bose, S. S., Stillman, G. E. (1989) Residual carbon acceptor incorporation in gallium arsenide grown by metalorganic chemical vapor deposition. Applied Physics Letters, 54 (13). 1262-1264 doi:10.1063/1.100733

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Reference TypeJournal (article/letter/editorial)
TitleResidual carbon acceptor incorporation in gallium arsenide grown by metalorganic chemical vapor deposition
JournalApplied Physics Letters
AuthorsReed, A. D.Author
Bose, S. S.Author
Stillman, G. E.Author
Year1989 (March 27)Volume54
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.100733Search in ResearchGate
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Mindat Ref. ID8486111Long-form Identifiermindat:1:5:8486111:3
GUID0
Full ReferenceReed, A. D., Bose, S. S., Stillman, G. E. (1989) Residual carbon acceptor incorporation in gallium arsenide grown by metalorganic chemical vapor deposition. Applied Physics Letters, 54 (13). 1262-1264 doi:10.1063/1.100733
Plain TextReed, A. D., Bose, S. S., Stillman, G. E. (1989) Residual carbon acceptor incorporation in gallium arsenide grown by metalorganic chemical vapor deposition. Applied Physics Letters, 54 (13). 1262-1264 doi:10.1063/1.100733
In(1989, March) Applied Physics Letters Vol. 54 (13) AIP Publishing

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Bose, S. S., Szafranek, I., Kim, M. H., Stillman, G. E. (1990) Residual acceptor impurities in undoped high‐purity InP grown by metalorganic chemical vapor deposition. Applied Physics Letters, 56 (8). 752-754 doi:10.1063/1.102702
Watkins, S. P., Haacke, G. (1991) Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine. Applied Physics Letters, 59 (18). 2263-2265 doi:10.1063/1.106064
Cunningham, B. T., Baker, J. E., Stockman, S. A., Stillman, G. E. (1990) Absence of13C incorporation in13CCl4‐doped InP grown by metalorganic chemical vapor deposition. Applied Physics Letters, 56 (18). 1760-1762 doi:10.1063/1.103092
Stockman, S. A., Hanson, A. W., Jackson, S. L., Baker, J. E., Stillman, G. E. (1993) Effect of post‐growth cooling ambient on acceptor passivation in carbon‐doped GaAs grown by metalorganic chemical vapor deposition. Applied Physics Letters, 62 (11). 1248-1250 doi:10.1063/1.108748
Cunningham, B. T., Haase, M. A., McCollum, M. J., Baker, J. E., Stillman, G. E. (1989) Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride. Applied Physics Letters, 54 (19). 1905-1907 doi:10.1063/1.101237
Cunningham, B. T., Stillman, G. E., Jackson, G. S. (1990) Carbon‐doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant source. Applied Physics Letters, 56 (4). 361-363 doi:10.1063/1.102785
Cunningham, B. T., Baker, J. E., Stillman, G. E. (1990) Carbon tetrachloride doped AlxGa1−xAs grown by metalorganic chemical vapor deposition. Applied Physics Letters, 56 (9). 836-838 doi:10.1063/1.103321
Hoshino, K., Kako, S., Arakawa, Y. (2004) Formation and optical properties of stacked GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition. Applied Physics Letters, 85 (7). 1262-1264 doi:10.1063/1.1784524
Yang, Q., Scott, D. S., Chung, T., Stillman, G. E. (2000) Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition. Applied Physics Letters, 77 (2). 271-273 doi:10.1063/1.126947
Giapis, Konstantinos P., Jensen, Klavs F., Potts, J. E., Pachuta, Steven J. (1989) Carbon incorporation in ZnSe grown by metalorganic chemical vapor deposition. Applied Physics Letters, 55 (5). 463-465 doi:10.1063/1.101853
Lee, B., Arai, K., Skromme, B. J., Bose, S. S., Roth, T. J., Aguilar, J. A., Lepkowski, T. R., Tien, N. C., Stillman, G. E. (1989) Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor‐phase epitaxial gallium arsenide. Journal of Applied Physics, 66 (8). 3772-3786 doi:10.1063/1.344040
 
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