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Rousseau, Kenneth V., Wang, K. L., Schulman, J. N. (1989) Γ‐ andX‐state influences on resonant tunneling current in single‐ and double‐barrier GaAs/AlAs structures. Applied Physics Letters, 54 (14). 1341-1343 doi:10.1063/1.100709

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Reference TypeJournal (article/letter/editorial)
TitleΓ‐ andX‐state influences on resonant tunneling current in single‐ and double‐barrier GaAs/AlAs structures
JournalApplied Physics Letters
AuthorsRousseau, Kenneth V.Author
Wang, K. L.Author
Schulman, J. N.Author
Year1989 (April 3)Volume54
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.100709Search in ResearchGate
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Mindat Ref. ID8486168Long-form Identifiermindat:1:5:8486168:1
GUID0
Full ReferenceRousseau, Kenneth V., Wang, K. L., Schulman, J. N. (1989) Γ‐ andX‐state influences on resonant tunneling current in single‐ and double‐barrier GaAs/AlAs structures. Applied Physics Letters, 54 (14). 1341-1343 doi:10.1063/1.100709
Plain TextRousseau, Kenneth V., Wang, K. L., Schulman, J. N. (1989) Γ‐ andX‐state influences on resonant tunneling current in single‐ and double‐barrier GaAs/AlAs structures. Applied Physics Letters, 54 (14). 1341-1343 doi:10.1063/1.100709
In(1989, April) Applied Physics Letters Vol. 54 (14) AIP Publishing

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Tsuchiya, Masahiro, Sakaki, Hiroyuki (1986) Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structures. Applied Physics Letters, 49 (2). 88-90 doi:10.1063/1.97360
Cheng, Peng, Harris, James S. (1989) Effect of Si doping in AlAs barrier layers of AlAs‐GaAs‐AlAs double‐barrier resonant tunneling diodes. Applied Physics Letters, 55 (6). 572-574 doi:10.1063/1.101836
Luo, L. F., Beresford, R., Wang, W. I., Mendez, E. E. (1989) Inelastic tunneling in (111) oriented AlAs/GaAs/AlAs double‐barrier heterostructures. Applied Physics Letters, 54 (21). 2133-2135 doi:10.1063/1.101149
Beresford, R., Luo, L. F., Wang, W. I., Mendez, E. E. (1989) Resonant tunneling throughX‐valley states in GaAs/AlAs/GaAs single‐barrier heterostructures. Applied Physics Letters, 55 (15). 1555-1557 doi:10.1063/1.102242
Yu, E. T., Jackson, M. K., McGill, T. C. (1989) Hole tunneling times in GaAs/AlAs double‐barrier structures. Applied Physics Letters, 55 (8). 744-746 doi:10.1063/1.101793
Reed, M. A., Lee, J. W., Tsai, H‐L. (1986) Resonant tunneling through a double GaAs/AlAs superlattice barrier, single quantum well heterostructure. Applied Physics Letters, 49 (3). 158-160 doi:10.1063/1.97210
Schulman, J. N., Anderson, C. L. (1986) HgTe‐CdTe double barrier tunneling structures. Applied Physics Letters, 48 (24). 1684-1686 doi:10.1063/1.96805
Shieh, Tung‐Ho, Lee, Si‐Chen (1993) Resonant tunneling ofX‐band electrons from AlAs through GaAs/AlAs/GaAs double barrier structure. Applied Physics Letters, 63 (9). 1219-1221 doi:10.1063/1.109777
Yang, L., Mars, D. E., Tan, M. R. T. (1993) Effect of electron launcher structures on AlAs/GaAs double barrier resonant tunneling diodes. Journal of Applied Physics, 73 (5). 2540-2542 doi:10.1063/1.353087
Tsuchiya, Masahiro, Sakaki, Hiroyuki (1986) Precise Control of Resonant Tunneling Current in AlAs/GaAs/AlAs Double Barrier Diodes with Atomically-Controlled Barrier Widths. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l185
Tsuchiya, Masahiro, Sakaki, Hiroyuki (1987) Dependence of resonant tunneling current on Al mole fractions in AlxGa1−xAs‐GaAs‐AlxGa1−xAs double barrier structures. Applied Physics Letters, 50 (21). 1503-1505 doi:10.1063/1.97813
 
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