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Rafferty, C. S., Landsberger, L. M., Dutton, R. W., Tiller, W. A. (1989) Nonlinear viscoelastic dilation of SiO2films. Applied Physics Letters, 54 (2). 151-152 doi:10.1063/1.101440

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Reference TypeJournal (article/letter/editorial)
TitleNonlinear viscoelastic dilation of SiO2films
JournalApplied Physics Letters
AuthorsRafferty, C. S.Author
Landsberger, L. M.Author
Dutton, R. W.Author
Tiller, W. A.Author
Year1989 (January 9)Volume54
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.101440Search in ResearchGate
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Mindat Ref. ID8486650Long-form Identifiermindat:1:5:8486650:7
GUID0
Full ReferenceRafferty, C. S., Landsberger, L. M., Dutton, R. W., Tiller, W. A. (1989) Nonlinear viscoelastic dilation of SiO2films. Applied Physics Letters, 54 (2). 151-152 doi:10.1063/1.101440
Plain TextRafferty, C. S., Landsberger, L. M., Dutton, R. W., Tiller, W. A. (1989) Nonlinear viscoelastic dilation of SiO2films. Applied Physics Letters, 54 (2). 151-152 doi:10.1063/1.101440
In(1989, January) Applied Physics Letters Vol. 54 (2) AIP Publishing

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Landsberger, L. M., Tiller, W. A. (1987) Refractive index, relaxation times and the viscoelastic model in dry‐grown SiO2films on Si. Applied Physics Letters, 51 (18). 1416-1418 doi:10.1063/1.98642
Rafferty, C. S., Dutton, R. W. (1989) Plastic analysis of cylinder oxidation. Applied Physics Letters, 54 (18). 1815-1817 doi:10.1063/1.101248
Rafferty, C. S., Borucki, L., Dutton, R. W. (1989) Plastic flow during thermal oxidation of silicon. Applied Physics Letters, 54 (16). 1516-1518 doi:10.1063/1.101384
Landsberger, L. M., Tiller, W. A. (1986) Stress relaxation technique for thermally grown SiO2. Applied Physics Letters, 49 (3). 143-145 doi:10.1063/1.97205
Hall, D. W., Newhouse, M. A., Borrelli, N. F., Dumbaugh, W. H., Weidman, D. L. (1989) Nonlinear optical susceptibilities of high‐index glasses. Applied Physics Letters, 54 (14). 1293-1295 doi:10.1063/1.100697
Madden, C. J., Marsland, R. A., Rodwell, M. J. W., Bloom, D. M., Pao, Y. C. (1989) Hyperabrupt‐doped GaAs nonlinear transmission line for picosecond shock‐wave generation. Applied Physics Letters, 54 (11). 1019-1021 doi:10.1063/1.100785
Hu, S. M., Fahey, P., Dutton, R. W. (1983) On models of phosphorus diffusion in silicon. Journal of Applied Physics, 54 (12). 6912-6922 doi:10.1063/1.331998
Reed, M. A., Frensley, W. R., Duncan, W. M., Matyi, R. J., Seabaugh, A. C., Tsai, H.‐L. (1989) Quantitative resonant tunneling spectroscopy: Current‐voltage characteristics of precisely characterized resonant tunneling diodes. Applied Physics Letters, 54 (13). 1256-1258 doi:10.1063/1.101355
Knorr, D. B., Lu, T.‐M. (1989) Texture analysis of Al/SiO2films deposited by a partially ionized beam. Applied Physics Letters, 54 (22). 2210-2212 doi:10.1063/1.101126
Rendell, R. W., Ngai, K. L. (1990) Evidence for anomalous structural relaxation in SiO2films. Applied Physics Letters, 57 (23). 2428-2430 doi:10.1063/1.103866
Li, P., Yapsir, A. S., Rajan, K., Lu, T.‐M. (1989) Electromigration in Al/SiO2films prepared by a partially ionized beam deposition technique. Applied Physics Letters, 54 (24). 2443-2445 doi:10.1063/1.101085
 
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