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d’Avitaya, F. Arnaud, Perio, A., Oberlin, J.‐C., Campidelli, Y., Chroboczek, J. A. (1989) Fabrication and structure of epitaxial Er silicide films on (111) Si. Applied Physics Letters, 54 (22). 2198-2200 doi:10.1063/1.101517

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Reference TypeJournal (article/letter/editorial)
TitleFabrication and structure of epitaxial Er silicide films on (111) Si
JournalApplied Physics Letters
Authorsd’Avitaya, F. ArnaudAuthor
Perio, A.Author
Oberlin, J.‐C.Author
Campidelli, Y.Author
Chroboczek, J. A.Author
Year1989 (May 29)Volume54
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.101517Search in ResearchGate
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Mindat Ref. ID8486867Long-form Identifiermindat:1:5:8486867:5
GUID0
Full Referenced’Avitaya, F. Arnaud, Perio, A., Oberlin, J.‐C., Campidelli, Y., Chroboczek, J. A. (1989) Fabrication and structure of epitaxial Er silicide films on (111) Si. Applied Physics Letters, 54 (22). 2198-2200 doi:10.1063/1.101517
Plain Textd’Avitaya, F. Arnaud, Perio, A., Oberlin, J.‐C., Campidelli, Y., Chroboczek, J. A. (1989) Fabrication and structure of epitaxial Er silicide films on (111) Si. Applied Physics Letters, 54 (22). 2198-2200 doi:10.1063/1.101517
In(1989, May) Applied Physics Letters Vol. 54 (22) AIP Publishing

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Duboz, J.-Y., Badoz, P.-A., Perio, A., Oberlin, J.-C., Arnaud D'Avitaya, F., Campidelli, Y., Chroboczek, J.A. (1989) Epitaxial erbium silicide films on Si(111) surface: Fabrication, structure, and electrical properties. Applied Surface Science, 38. 171-177 doi:10.1016/0169-4332(89)90533-3
Duboz, J. Y., Badoz, P. A., d’Avitaya, F. Arnaud, Chroboczek, J. A. (1989) Electronic transport properties of epitaxial erbium silicide/silicon heterostructures. Applied Physics Letters, 55 (1). 84-86 doi:10.1063/1.102392
Pahun, L., Campidelli, Y., d’Avitaya, F. Arnaud, Badoz, P. A. (1992) Infrared response of Pt/Si/ErSi1.7heterostructure: Tunable internal photoemission sensor. Applied Physics Letters, 60 (10). 1166-1168 doi:10.1063/1.107393
Perio, A., Torres, J., Bomchil, G., Arnaud d’Avitaya, F., Pantel, R. (1984) Growth of MoSi2with preferential orientation on (100) silicon. Applied Physics Letters, 45 (8). 857-859 doi:10.1063/1.95426
Glastre, G., Rosencher, E., d’Avitaya, F. Arnaud, Puissant, C., Pons, M., Vincent, G., Pfister, J. C. (1988) CoSi2and Si epitaxial growth in 〈111〉 Si submicron lines with application to a permeable base transistor. Applied Physics Letters, 52 (11). 898-900 doi:10.1063/1.99266
Bassani, F., Vervoort, L., Mihalcescu, I., Vial, J. C., d’Avitaya, F. Arnaud (1996) Fabrication and optical properties of Si/CaF2(111) multi-quantum wells. Journal of Applied Physics, 79 (8). 4066pp. doi:10.1063/1.361834
Moutonnet, D., L'Haridon, H., Favennec, P.N., Salvi, M., D'Avitaya, F.Arnaud, Chroboczek, J., Campidelli, Y. (1990) Epitaxial growth of Si on Er-implanted Si substrates. Materials Letters, 9. 57-59 doi:10.1016/0167-577x(90)90151-b
Kaatz, F. H., Spiegel, J. Van der, Graham, W. R. (1991) Fabrication and structure of epitaxial terbium silicide on Si(111). Journal of Applied Physics, 69 (1). 514-516 doi:10.1063/1.347696
Arnaud D'Avitaya, F., Chroboczek, J.A., D'Anterroches, C., Glastre, G., Campidelli, Y., Rosencher, E. (1987) Silicon overgrowth on CoSi2/Si(111) epitaxial structures: Application to permeable base transistor. Journal of Crystal Growth, 81 (1). 463-469 doi:10.1016/0022-0248(87)90434-9
Delage, S., Campidelli, Y., Arnaud d’Avitaya, F., Tatarenko, S. (1987) Electron irradiation effect on antimony doping of silicon 〈111〉 grown by molecular‐beam epitaxy. Journal of Applied Physics, 61 (4). 1404-1409 doi:10.1063/1.338119
Tsai, W. C., Chi, K. S., Chen, L. J. (2004) Growth of pinhole-free epitaxial Yb and Er silicide thin films on atomically clean (111)Si. Journal of Applied Physics, 96 (9). 5353-5356 doi:10.1063/1.1769604
 
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