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Glade, M., Grützmacher, D., Meyer, R., Woelk, E. G., Balk, P. (1989) Activation of Zn and Cd acceptors in InP grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 54 (24). 2411-2413 doi:10.1063/1.101091

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Reference TypeJournal (article/letter/editorial)
TitleActivation of Zn and Cd acceptors in InP grown by metalorganic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsGlade, M.Author
Grützmacher, D.Author
Meyer, R.Author
Woelk, E. G.Author
Balk, P.Author
Year1989 (June 12)Volume54
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.101091Search in ResearchGate
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Mindat Ref. ID8486976Long-form Identifiermindat:1:5:8486976:2
GUID0
Full ReferenceGlade, M., Grützmacher, D., Meyer, R., Woelk, E. G., Balk, P. (1989) Activation of Zn and Cd acceptors in InP grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 54 (24). 2411-2413 doi:10.1063/1.101091
Plain TextGlade, M., Grützmacher, D., Meyer, R., Woelk, E. G., Balk, P. (1989) Activation of Zn and Cd acceptors in InP grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 54 (24). 2411-2413 doi:10.1063/1.101091
In(1989, June) Applied Physics Letters Vol. 54 (24) AIP Publishing

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Grützmacher, D., Meyer, R., Balk, P., Berg, C., Schäpers, T., Lüth, H., Zachau, M., Koch, F. (1989) Properties of the two‐dimensional electron gas in modulation‐doped GaInAs(P)/InP structures grown by low‐pressure metalorganic vapor‐phase epitaxy. Journal of Applied Physics, 66 (2). 697-703 doi:10.1063/1.343540
Grützmacher, D., Wolter, K., Jürgensen, H., Balk, P., Bulle Lieuwma, C. W. T. (1988) Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 52 (11). 872-873 doi:10.1063/1.99258
Fidorra, F., Harde, P., Venghaus, H., Grützmacher, D. (1989) Orientation‐dependent metalorganic vapor phase epitaxy regrowth on GaInAsP/InP laser structures. Applied Physics Letters, 55 (13). 1321-1323 doi:10.1063/1.101643
König, U., Haspeklo, H., Marschall, P., Kuisl, M. (1989) Spin‐on and boat diffusion of Zn into InP and InGaAs grown by metalorganic vapor‐phase epitaxy and liquid‐phase epitaxy. Journal of Applied Physics, 65 (2). 548-552 doi:10.1063/1.343138
Glade, M., Hergeth, J., Grützmacher, D., Masseli, K., Balk, P. (1991) Diffusion of Zn acceptors during MOVPE of InP. Journal of Crystal Growth, 108 (3). 449-454 doi:10.1016/0022-0248(91)90221-p
Antell, G. R., Briggs, A. T. R., Butler, B. R., Kitching, S. A., Stagg, J. P., Chew, A., Sykes, D. E. (1988) Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxy. Applied Physics Letters, 53 (9). 758-760 doi:10.1063/1.99824
Williams, D. M., Wessels, B. W. (1990) Yb‐doped InP grown by metalorganic vapor phase epitaxy using a beta‐diketonate precursor. Applied Physics Letters, 56 (6). 566-568 doi:10.1063/1.102746
Nottenburg, R. N., Chen, Y. K., Tanbun‐Ek, T., Logan, R. A., Humphrey, D. A. (1989) High performance InP/InGaAs heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 55 (2). 171-172 doi:10.1063/1.102133
Haywood, S. K., Chidley, E. T. R., Mallard, R. E., Mason, N. J., Nicholas, R. J., Walker, P. J., Warburton, R. J. (1989) GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 54 (10). 922-924 doi:10.1063/1.100809
Roberts, J. S., Green, R. P., Wilson, L. R., Zibik, E. A., Revin, D. G., Cockburn, J. W., Airey, R. J. (2003) Quantum cascade lasers grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 82 (24). 4221-4223 doi:10.1063/1.1583858
Antreasyan, A., Garbinski, P. A., Mattera, V. D., Feuer, M. D., Filipe, J., Chu, S. N. G. (1989) High‐speed InP/InGaAsP metal‐semiconductor field‐effect transistors grown by chloride vapor phase epitaxy. Applied Physics Letters, 54 (2). 176-178 doi:10.1063/1.101372
 
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