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Chang‐Hasnain, C. J., Kapon, E., Bhat, R. (1989) Spatial mode structure of broad‐area semiconductor quantum well lasers. Applied Physics Letters, 54 (3). 205-207 doi:10.1063/1.101009

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Reference TypeJournal (article/letter/editorial)
TitleSpatial mode structure of broad‐area semiconductor quantum well lasers
JournalApplied Physics Letters
AuthorsChang‐Hasnain, C. J.Author
Kapon, E.Author
Bhat, R.Author
Year1989 (January 16)Volume54
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.101009Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8487216Long-form Identifiermindat:1:5:8487216:4
GUID0
Full ReferenceChang‐Hasnain, C. J., Kapon, E., Bhat, R. (1989) Spatial mode structure of broad‐area semiconductor quantum well lasers. Applied Physics Letters, 54 (3). 205-207 doi:10.1063/1.101009
Plain TextChang‐Hasnain, C. J., Kapon, E., Bhat, R. (1989) Spatial mode structure of broad‐area semiconductor quantum well lasers. Applied Physics Letters, 54 (3). 205-207 doi:10.1063/1.101009
In(1989, January) Applied Physics Letters Vol. 54 (3) AIP Publishing

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Kapon, E., Simhony, S., Bhat, R., Hwang, D. M. (1989) Single quantum wire semiconductor lasers. Applied Physics Letters, 55 (26). 2715-2717 doi:10.1063/1.101934
Chang‐Hasnain, C. J., Lo, Y. H., Bhat, R., Stoffel, N. G., Lee, T. P. (1989) High quality GaAs quantum well lasers grown on InP substrates by organometallic chemical vapor deposition. Applied Physics Letters, 54 (2). 156-158 doi:10.1063/1.101214
Deri, R. J., Kapon, E., Bhat, R., Seto, M., Kash, K. (1989) Low‐loss multiple quantum well GaInAs/InP optical waveguides. Applied Physics Letters, 54 (18). 1737-1739 doi:10.1063/1.101275
Kapon, E., Harbison, J. P., Yun, C. P., Florez, L. T. (1989) Patterned quantum well semiconductor laser arrays. Applied Physics Letters, 54 (4). 304-306 doi:10.1063/1.100994
Chang‐Hasnain, C. J., Kapon, E., Harbison, J. P., Florez, L. T. (1990) Integrated external cavity quantum well laser array using single epitaxial growth on a patterned substrate. Applied Physics Letters, 56 (5). 429-431 doi:10.1063/1.102779
Chang‐Hasnain, C. J., Bhat, R., Zah, C. E., Koza, M. A., Favire, F., Lee, T. P. (1990) Novel AlGaInAs/AlInAs lasers emitting at 1 μm. Applied Physics Letters, 57 (25). 2638-2640 doi:10.1063/1.103809
Bhat, R., Kapon, E., Werner, J., Hwang, D. M., Stoffel, N. G., Koza, M. A. (1990) Organometallic chemical vapor deposition of InP/InGaAsP on nonplanar InP substrates: Application to multiple quantum well lasers. Applied Physics Letters, 56 (9). 863-865 doi:10.1063/1.102665
Larsson, A., Salzman, J., Mittelstein, M., Yariv, A. (1986) Lateral coherence properties of broad‐area semiconductor quantum well lasers. Journal of Applied Physics, 60 (1). 66-68 doi:10.1063/1.337629
Deppe, D. G., Jackson, G. S., Holonyak, N., Hall, D. C., Burnham, R. D., Thornton, R. L., Epler, J. E., Paoli, T. L. (1986) Single‐mode single‐lobe operation of broad area AlxGa1−xAs‐GaAs quantum well lasers. Applied Physics Letters, 49 (14). 883-885 doi:10.1063/1.97524
Werner, J., Kapon, E., Stoffel, N. G., Colas, E., Schwarz, S. A., Schwartz, C. L., Andreadakis, N. (1989) Integrated external cavity GaAs/AlGaAs lasers using selective quantum well disordering. Applied Physics Letters, 55 (6). 540-542 doi:10.1063/1.101848
Vail, E. C., Lim, S. F., Wu, Y. A., Francis, D. A., Chang‐Hasnain, C. J., Bhat, R., Caneau, C. (1993) Buried heterostructure 0.98 μm InGaAs/InGaAsP/InGaP lasers. Applied Physics Letters, 63 (16). 2183-2185 doi:10.1063/1.110577
 
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