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Raja, M. Y. A., Brueck, S. R. J., Osiński, M., Schaus, C. F., McInerney, J. G., Brennan, T. M., Hammons, B. E. (1989) Erratum: Surface‐emitting, multiple quantum well GaAs/AlGaAs laser with wavelength‐resonant periodic gain medium [Appl. Phys. Lett. 53, 1678 (1988)]. Applied Physics Letters, 54 (7). 677 doi:10.1063/1.101381

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Reference TypeJournal (article/letter/editorial)
TitleErratum: Surface‐emitting, multiple quantum well GaAs/AlGaAs laser with wavelength‐resonant periodic gain medium [Appl. Phys. Lett. 53, 1678 (1988)]
JournalApplied Physics Letters
AuthorsRaja, M. Y. A.Author
Brueck, S. R. J.Author
Osiński, M.Author
Schaus, C. F.Author
McInerney, J. G.Author
Brennan, T. M.Author
Hammons, B. E.Author
Year1989 (February 13)Volume54
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.101381Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8487508Long-form Identifiermindat:1:5:8487508:2
GUID0
Full ReferenceRaja, M. Y. A., Brueck, S. R. J., Osiński, M., Schaus, C. F., McInerney, J. G., Brennan, T. M., Hammons, B. E. (1989) Erratum: Surface‐emitting, multiple quantum well GaAs/AlGaAs laser with wavelength‐resonant periodic gain medium [Appl. Phys. Lett. 53, 1678 (1988)]. Applied Physics Letters, 54 (7). 677 doi:10.1063/1.101381
Plain TextRaja, M. Y. A., Brueck, S. R. J., Osiński, M., Schaus, C. F., McInerney, J. G., Brennan, T. M., Hammons, B. E. (1989) Erratum: Surface‐emitting, multiple quantum well GaAs/AlGaAs laser with wavelength‐resonant periodic gain medium [Appl. Phys. Lett. 53, 1678 (1988)]. Applied Physics Letters, 54 (7). 677 doi:10.1063/1.101381
In(1989, February) Applied Physics Letters Vol. 54 (7) AIP Publishing

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Raja, M. Y. A., Brueck, S. R. J., Osiński, M., Schaus, C. F., McInerney, J. G., Brennan, T. M., Hammons, B. E. (1988) Surface‐emitting, multiple quantum well GaAs/AlGaAs laser with wavelength‐resonant periodic gain medium. Applied Physics Letters, 53 (18). 1678-1680 doi:10.1063/1.99795
Raja, M. Y. A., Brueck, S. R. J., Osinski, M., McInerney, J. (1988) Response to ‘‘Comment on ‘Laser‐induced degradation of GaAs photoluminescence’ ’’ [Appl. Phys. Lett.53, 927 (1988)]. Applied Physics Letters, 53 (10). 927-928 doi:10.1063/1.100073
Raja, M. Y. A., Brueck, S. R. J., Osinski, M., McInerney, J. (1988) Laser‐induced degradation of GaAs photoluminescence. Applied Physics Letters, 52 (8). 625-627 doi:10.1063/1.99385
Erskine, D. J., Taylor, A. J., Tang, C. L. (1985) Erratum: Femtosecond studies of intraband relaxation in GaAs, AlGaAs, and GaAs/AlGaAs multiple quantum well structures [Appl. Phys. Lett. 45, 54 (1984)]. Applied Physics Letters, 46 (6). 614 doi:10.1063/1.95928
Gourley, P. L., Lyo, S. K., Brennan, T. M., Hammons, B. E., Schaus, C. F., Sun, S. (1989) Lasing threshold in quantum well surface‐emitting lasers: Many‐body effects and temperature dependence. Applied Physics Letters, 55 (26). 2698-2700 doi:10.1063/1.101928
Bandara, K. M. S. V., Coon, D. D., O, Byungsung, Lin, Y. F., Francombe, M. H. (1989) Erratum: Exchange interactions in quantum well subbands [Appl. Phys. Lett. 53, 1931 (1988)]. Applied Physics Letters, 55 (2). 206 doi:10.1063/1.102380
Gourley, P. L., Brennan, T. M., Hammons, B. E., Corzine, S. W., Geels, R. S., Yan, R. H., Scott, J. W., Coldren, L. A. (1989) High‐efficiency TEM00continuous‐wave (Al,Ga)As epitaxial surface‐emitting lasers and effect of half‐wave periodic gain. Applied Physics Letters, 54 (13). 1209-1211 doi:10.1063/1.100717
Raja, M. Y. A., Brueck, S. R. J., Scully, M. O., Lee, C. (1991) Resonant periodic-gain surface-emitting semiconductor lasers and correlated emission in a ring cavity. Physical Review A, 44 (7). 4599-4607 doi:10.1103/physreva.44.4599
Schönbein, C., Schneider, H., Rehm, R., Walther, M. (1999) Response to “Comment on ‘Noise gain and detectivity of n-type GaAs/AlGaAs quantum well infrared photodetectors’ ” [Appl. Phys. Lett. 74, 892 (1999)]. Applied Physics Letters, 74 (6). 892 doi:10.1063/1.123958
Julien, F. H., Lourtioz, J.‐M., Herschkorn, N., Delacourt, D., Pocholle, J. P., Papuchon, M., Planel, R., LeRoux, G. (1993) Erratum: ‘‘Optical saturation of intersubband absorption in GaAs‐AlxGa1−xAs quantum wells’’ [Appl. Phys. Lett. 53, 116 (1988)]. Applied Physics Letters, 62 (18). 2289 doi:10.1063/1.109643
Lin, C. H., Chua, C. L., Zhu, Z. H., Ejeckam, F. E., Wu, T. C., Lo, Y. H., Bhat, R. (1994) Erratum: ‘‘Photopumped long wavelength vertical‐cavity surface‐emitting lasers using strain‐compensated multiple quantum wells’’ [Appl. Phys. Lett. 64, 3395 (1994)]. Applied Physics Letters, 65 (18). 2365 doi:10.1063/1.113091
 
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