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Molassioti, A., Moser, M., Stapor, A., Scholz, F., Hostalek, M., Pohl, L. (1989) Growth of indium phosphide by metalorganic vapor phase epitaxy using dimethyl (3‐dimethylaminopropyl) indium as a new indium source. Applied Physics Letters, 54 (9). 857-858 doi:10.1063/1.100844

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of indium phosphide by metalorganic vapor phase epitaxy using dimethyl (3‐dimethylaminopropyl) indium as a new indium source
JournalApplied Physics Letters
AuthorsMolassioti, A.Author
Moser, M.Author
Stapor, A.Author
Scholz, F.Author
Hostalek, M.Author
Pohl, L.Author
Year1989 (February 27)Volume54
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.100844Search in ResearchGate
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Mindat Ref. ID8487589Long-form Identifiermindat:1:5:8487589:7
GUID0
Full ReferenceMolassioti, A., Moser, M., Stapor, A., Scholz, F., Hostalek, M., Pohl, L. (1989) Growth of indium phosphide by metalorganic vapor phase epitaxy using dimethyl (3‐dimethylaminopropyl) indium as a new indium source. Applied Physics Letters, 54 (9). 857-858 doi:10.1063/1.100844
Plain TextMolassioti, A., Moser, M., Stapor, A., Scholz, F., Hostalek, M., Pohl, L. (1989) Growth of indium phosphide by metalorganic vapor phase epitaxy using dimethyl (3‐dimethylaminopropyl) indium as a new indium source. Applied Physics Letters, 54 (9). 857-858 doi:10.1063/1.100844
In(1989, February) Applied Physics Letters Vol. 54 (9) AIP Publishing

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Weber, J., Molassioti, A., Moser, M., Stapor, A., Scholz, F., Hörcher, G., Forchel, A., Hammel, A., Laube, G., Weidlein, J. (1988) InP:Yb layers grown by adduct metalorganic vapor phase epitaxy using Yb(MeCp)3. Applied Physics Letters, 53 (25). 2525-2527 doi:10.1063/1.100197
Ritchie, S., Spurdens, P. C., Hewett, N. P., Aylett, M. R. (1989) Interference filters using indium phosphide‐based epitaxial layers grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 55 (17). 1713-1714 doi:10.1063/1.102197
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Sun, Y., Cheng, S. F., Chen, G., Woo, R. L., Hicks, R. F. (2005) The structure of indium phosphide (001) treated with trimethylantimony in a metalorganic vapor-phase epitaxy reactor. Journal of Applied Physics, 97 (10). 103512pp. doi:10.1063/1.1897485
Scholz, F., Molassioti, A., Moser, M., Notheisen, B., Streubel, K., Hostalek, M., Pohl, L. (1991) Novel liquid precursors for the growth of InP and GaInAs epitaxial layers by MOVPE. Journal of Crystal Growth, 107 (1). 365-369 doi:10.1016/0022-0248(91)90487-p
Chen, W. K., Chen, J. C., Anthony, L., Liu, P. L. (1989) Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors. Applied Physics Letters, 55 (10). 987-989 doi:10.1063/1.101697
Mimila-Arroyo, J., Dı́az-Reyes, J., Lusson, A. (1998) Indium phosphide vapor phase epitaxy at high growth rates, growth kinetics, and characterization. Journal of Applied Physics, 84 (3). 1572-1578 doi:10.1063/1.368225
Li, X., Wanlass, M. W., Gessert, T. A., Emery, K. A., Coutts, T. J. (1989) High‐efficiency indium tin oxide/indium phosphide solar cells. Applied Physics Letters, 54 (26). 2674-2676 doi:10.1063/1.101363
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