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Tokura, Y., Tsubaki, K., Susa, N. (1989) Electronic states in lateral structures on modulation‐doped heterointerfaces. Applied Physics Letters, 55 (14). 1403-1405 doi:10.1063/1.101607

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Reference TypeJournal (article/letter/editorial)
TitleElectronic states in lateral structures on modulation‐doped heterointerfaces
JournalApplied Physics Letters
AuthorsTokura, Y.Author
Tsubaki, K.Author
Susa, N.Author
Year1989 (October 2)Volume55
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.101607Search in ResearchGate
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Mindat Ref. ID8488041Long-form Identifiermindat:1:5:8488041:9
GUID0
Full ReferenceTokura, Y., Tsubaki, K., Susa, N. (1989) Electronic states in lateral structures on modulation‐doped heterointerfaces. Applied Physics Letters, 55 (14). 1403-1405 doi:10.1063/1.101607
Plain TextTokura, Y., Tsubaki, K., Susa, N. (1989) Electronic states in lateral structures on modulation‐doped heterointerfaces. Applied Physics Letters, 55 (14). 1403-1405 doi:10.1063/1.101607
In(1989, October) Applied Physics Letters Vol. 55 (14) AIP Publishing

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Tsubaki, K., Tokura, Y., Susa, N. (1990) Density of states of an AlAs/GaAs fractional superlattice in a modulation− doped structure. Applied Physics Letters, 57 (20). 2101-2103 doi:10.1063/1.103954
Tsubaki, K., Tokura, Y., Susa, N. (1990) Mobility modulation on a modulation‐doped structure with an AlAs/GaAs fractional layer superlattice. Applied Physics Letters, 57 (8). 804-806 doi:10.1063/1.103426
Tokura, Y., Tsubaki, K., Susa, N. (1990) Electronic states in an AIGaAsGaAs modulation-doped hetero-interface with a 10 nm-order periodic structure. Surface Science, 228 (1). 280-282 doi:10.1016/0039-6028(90)90309-v
Tokura, Y., Susa, N. (1990) Electron effective‐mass modulation transistor. Journal of Applied Physics, 67 (4). 2171-2173 doi:10.1063/1.345558
Takagaki, Y., Ploog, K. (1995) Lateral potential modulation in periodically line‐doped structures. Journal of Applied Physics, 77 (2). 717-721 doi:10.1063/1.359517
Phillips, J. R., Tsubaki, K., Saku, T., Tarucha, S. (1992) Low‐frequency noise in very high mobility modulation‐doped structures. Applied Physics Letters, 61 (24). 2926-2928 doi:10.1063/1.108024
Tsubaki, K., Maeda, N., Saitoh, T., Kobayashi, N. (2002) Spin splitting in modulation-doped AlGaN/GaN two-dimensional electron gas. Applied Physics Letters, 80 (17). 3126-3128 doi:10.1063/1.1474599
Tabatabaie, N., Meynadier, M.‐H., Nahory, R. E., Harbison, J. P., Florez, L. T. (1989) Large lateral photovoltaic effect in modulation‐doped AlGaAs/GaAs heterostructures. Applied Physics Letters, 55 (8). 792-794 doi:10.1063/1.101762
Fukui, Takashi, Saito, Hisao, Tokura, Yasuhiro (1989) Lateral interface mixing in GaAs quantum well wire arrays. Applied Physics Letters, 55 (19). 1958-1959 doi:10.1063/1.102154
Iwasa, Y., Koda, T., Tokura, Y., Koshihara, S., Iwasawa, N., Saito, G. (1989) Switching effect in organic charge transfer complex crystals. Applied Physics Letters, 55 (20). 2111-2113 doi:10.1063/1.102078
Kodaira, Yutaka, Kuwano, Hiroshi, Tsubaki, Kotaro (1989) Suppression of acoustic phonon scattering in two‐dimensional electron gas on (InAs)1(GaAs)1/InP heterointerfaces. Applied Physics Letters, 54 (24). 2414-2416 doi:10.1063/1.101092
 
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