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Perry, A. J., Boswell, R. W. (1989) Fast anisotropic etching of silicon in an inductively coupled plasma reactor. Applied Physics Letters, 55 (2). 148-150 doi:10.1063/1.102127

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Reference TypeJournal (article/letter/editorial)
TitleFast anisotropic etching of silicon in an inductively coupled plasma reactor
JournalApplied Physics Letters
AuthorsPerry, A. J.Author
Boswell, R. W.Author
Year1989 (July 10)Volume55
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.102127Search in ResearchGate
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Mindat Ref. ID8488478Long-form Identifiermindat:1:5:8488478:9
GUID0
Full ReferencePerry, A. J., Boswell, R. W. (1989) Fast anisotropic etching of silicon in an inductively coupled plasma reactor. Applied Physics Letters, 55 (2). 148-150 doi:10.1063/1.102127
Plain TextPerry, A. J., Boswell, R. W. (1989) Fast anisotropic etching of silicon in an inductively coupled plasma reactor. Applied Physics Letters, 55 (2). 148-150 doi:10.1063/1.102127
In(1989, July) Applied Physics Letters Vol. 55 (2) AIP Publishing

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Boswell, R. W., Porteous, R. K. (1987) Large volume, high density rf inductively coupled plasma. Applied Physics Letters, 50 (17). 1130-1132 doi:10.1063/1.98257
Cui, Chunshi, Boswell, R. W. (1993) Role of excitation frequency in a low‐pressure, inductively coupled radio‐frequency, magnetized plasma. Applied Physics Letters, 63 (17). 2330-2332 doi:10.1063/1.110516
Boswell, R. W., Porteous, R. K. (1987) Etching in a pulsed plasma. Journal of Applied Physics, 62 (8). 3123-3129 doi:10.1063/1.339362
Durandet, A., Davis, C. A., Boswell, R. W. (1997) Pure silicon plasma in a helicon plasma deposition system. Applied Physics Letters, 70 (14). 1814-1816 doi:10.1063/1.118699
Takechi, K., Lieberman, M. A. (2001) Photoresist etching in an inductively coupled, traveling wave driven, large area plasma source. Journal of Applied Physics, 89 (2). 869-877 doi:10.1063/1.1331336
Camparo, J. C., Mackay, R. (2006) Ion-wave stabilization of an inductively coupled plasma. Applied Physics Letters, 88 (17). 173510pp. doi:10.1063/1.2198108
Chabert, P., Proust, N., Perrin, J., Boswell, R. W. (2000) High rate etching of 4H–SiC using a SF6/O2 helicon plasma. Applied Physics Letters, 76 (16). 2310-2312 doi:10.1063/1.126329
Bárdos, L., Berg, S., Blom, H‐O. (1989) Superhigh‐rate plasma jet etching of silicon. Applied Physics Letters, 55 (16). 1615-1617 doi:10.1063/1.102215
Sobolewski, Mark A. (2005) Noninvasive monitoring of ion energy drift in an inductively coupled plasma reactor. Journal of Applied Physics, 97 (3). 33301pp. doi:10.1063/1.1834977
Doemling, M. F., Rueger, N. R., Oehrlein, G. S. (1996) Observation of inverse reactive ion etching lag for silicon dioxide etching in inductively coupled plasmas. Applied Physics Letters, 68 (1). 10-12 doi:10.1063/1.116772
Khan, F. A., Adesida, I. (1999) High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures. Applied Physics Letters, 75 (15). 2268-2270 doi:10.1063/1.124986
 
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