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Ikarashi, Nobuyuki, Sakai, Akira, Baba, Toshio, Ishida, Koichi (1989) High‐resolution electron microscopy of the GaAs/AlGaAs heterointerface with (200) and transmitted beams. Applied Physics Letters, 55 (24). 2509-2511 doi:10.1063/1.102013

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Reference TypeJournal (article/letter/editorial)
TitleHigh‐resolution electron microscopy of the GaAs/AlGaAs heterointerface with (200) and transmitted beams
JournalApplied Physics Letters
AuthorsIkarashi, NobuyukiAuthor
Sakai, AkiraAuthor
Baba, ToshioAuthor
Ishida, KoichiAuthor
Year1989 (December 11)Volume55
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.102013Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8488851Long-form Identifiermindat:1:5:8488851:8
GUID0
Full ReferenceIkarashi, Nobuyuki, Sakai, Akira, Baba, Toshio, Ishida, Koichi (1989) High‐resolution electron microscopy of the GaAs/AlGaAs heterointerface with (200) and transmitted beams. Applied Physics Letters, 55 (24). 2509-2511 doi:10.1063/1.102013
Plain TextIkarashi, Nobuyuki, Sakai, Akira, Baba, Toshio, Ishida, Koichi (1989) High‐resolution electron microscopy of the GaAs/AlGaAs heterointerface with (200) and transmitted beams. Applied Physics Letters, 55 (24). 2509-2511 doi:10.1063/1.102013
In(1989, December) Applied Physics Letters Vol. 55 (24) AIP Publishing

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Ikarashi, Nobuyuki, Sakai, Akira, Baba, Toshio, Ishida, Koichi, Motohisa, Junich, Sakaki, Hiroyuki (1990) High‐resolution transmission electron microscopy of GaAs/AlAs heterointerfaces grown on the misoriented substrate in the 〈110〉 projection. Applied Physics Letters, 57 (19). 1983-1985 doi:10.1063/1.103986
Ikarashi, Nobuyuki, Baba, Toshio, Ishida, Koichi (1993) High‐resolution transmission electron microscopy of vicinal AlAs/GaAs interfacial structure. Applied Physics Letters, 62 (14). 1632-1634 doi:10.1063/1.108609
Ikarashi, Nobuyuki, Tanaka, Masaaki, Baba, Toshio, Sakaki, Hiroyuki, Ishida, Koichi (1993) High-Resolution Transmission Electron Microscopy of AlAs/GaAs Interfacial Structure in the <110> Projection. Japanese Journal of Applied Physics, 32. 2824-2831 doi:10.1143/jjap.32.2824
Ikarashi, Nobuyuki, Tanaka, Masaaki, Sakaki, Hiroyuki, Ishida, Koichi (1992) High‐resolution electron microscopy of growth interruption effect on AlAs/GaAs interfacial structure during molecular beam epitaxy. Applied Physics Letters, 60 (11). 1360-1362 doi:10.1063/1.107291
Ikarashi, Nobuyuki, Tatsumi, Toru, Ishida, Koichi (1994) High-Resolution Transmission Electron Microscopy of Si/Ge Interfacial Structures. Japanese Journal of Applied Physics, 33. 1228-1233 doi:10.1143/jjap.33.1228
Ikarashi, Nobuyuki, Ishida, Koichi (1998) High-resolution Transmission Electron Microscopy of Semiconductor Hetero-epitaxial Interfacial Structures. Materia Japan, 37 (12). 1003 doi:10.2320/materia.37.1003
Ono, Haruhiko, Ikarashi, Nobuyuki, Baba, Toshio (1995) Al diffusion into GaAs from monatomic AlAs layers investigated by localized vibrational modes. Applied Physics Letters, 66 (5). 601-603 doi:10.1063/1.114026
Sakai, Akira, Tatsumi, Toru, Niino, Taeko, Hirayama, Hiroyuki, Ishida, Koichi (1989) Interface atomic structure of Si/SiO2/Si formed by molecular beam deposition. Applied Physics Letters, 55 (24). 2500-2502 doi:10.1063/1.102298
Sakai, Akira, Tatsumi, Toru, Ishida, Koichi (1989) Direct observation of a 7 × 7 superstructure at the amorphous Si/Si(111) interface by cross-sectional high resolution transmission electron microscopy. Surface Science Letters, 224 (1). doi:10.1016/0167-2584(89)90134-5
Sakai, Akira, Tatsumi, Toru, Ishida, Koichi (1989) Direct observation of A 7 × 7 superstructure at the amorphous Si/Si(111) Interface by cross-sectional high resolution transmission electron microscopy. Surface Science, 224 (1). doi:10.1016/0039-6028(89)90890-x
Sano, Nobuyuki, Aoki, Takahiro, Yoshii, Akira (1989) Soft and hard ionization thresholds in Si and GaAs. Applied Physics Letters, 55 (14). 1418-1420 doi:10.1063/1.101612
 
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