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Oliveira, L. E., López‐Gondar, J. (1989) Photoluminescence spectra of shallow acceptors in GaAs‐(Ga,Al)As quantum wells. Applied Physics Letters, 55 (26). 2751-2753 doi:10.1063/1.101943

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence spectra of shallow acceptors in GaAs‐(Ga,Al)As quantum wells
JournalApplied Physics Letters
AuthorsOliveira, L. E.Author
López‐Gondar, J.Author
Year1989 (December 25)Volume55
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.101943Search in ResearchGate
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Mindat Ref. ID8488967Long-form Identifiermindat:1:5:8488967:8
GUID0
Full ReferenceOliveira, L. E., López‐Gondar, J. (1989) Photoluminescence spectra of shallow acceptors in GaAs‐(Ga,Al)As quantum wells. Applied Physics Letters, 55 (26). 2751-2753 doi:10.1063/1.101943
Plain TextOliveira, L. E., López‐Gondar, J. (1989) Photoluminescence spectra of shallow acceptors in GaAs‐(Ga,Al)As quantum wells. Applied Physics Letters, 55 (26). 2751-2753 doi:10.1063/1.101943
In(1989, December) Applied Physics Letters Vol. 55 (26) AIP Publishing

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López-Gondar, J., d’Albuquerque e Castro, J., Oliveira, Luiz E. (1990) Electric-field effects on shallow impurity states in GaAs-(Ga,Al)As quantum wells. Physical Review B, 42 (11) 7069-7077 doi:10.1103/physrevb.42.7069
Oliveira, L. E., López-Gondar, J. (1990) Acceptor-related photoluminescence study in GaAs/Ga1−xAlxAs quantum wells. Physical Review B, 41 (6) 3719-3727 doi:10.1103/physrevb.41.3719
Barticevic, Z., Pacheco, M., Duque, C. A., Oliveira, L. E. (2002) Magnetoabsorption spectra of intraexcitonic transitions in GaAs-(Ga,Al)As semiconductor quantum wells. Journal of Applied Physics, 92 (3). 1227-1231 doi:10.1063/1.1489495
Santiago, Røsana B., Oliveira, L. E., Castro, J. D'Albuquerque E (1992) On the Shallow-Donor States in GaAs-(Ga, Al) As Quantum Wells under Applied Electric Field. physica status solidi (b), 169 (1). doi:10.1002/pssb.2221690133
Sabin del Valle, J., de Dios‐Leyva, M., Oliveira, L. E. (1996) Infrared‐absorption spectra associated to transitions from donor states to conduction subbands in GaAs‐(Ga,Al)As quantum wells. Journal of Applied Physics, 80 (2). 1142-1145 doi:10.1063/1.362851
Schlesinger, T. E., Kuech, T. (1986) Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells. Applied Physics Letters, 49 (9). 519-521 doi:10.1063/1.97107
Oliveira, L. E., Mahan, G. D. (1993) Donor-photoluminescence line shapes from GaAs-(Ga,Al)As quantum wells. Physical Review B, 47 (4) 2406-2409 doi:10.1103/physrevb.47.2406
Chin, Albert, Lee, K. (1996) High quality Al(Ga)As/GaAs/Al(Ga)As quantum wells grown on (111)A GaAs substrates. Applied Physics Letters, 68 (24). 3437-3439 doi:10.1063/1.115785
de Dios‐Leyva, M., Oliveira, Luiz E. (1994) Carrier densities and electron‐hole recombination lifetimes in GaAs‐(Ga,Al)As quantum‐well photoluminescence. Journal of Applied Physics, 75 (1). 660-662 doi:10.1063/1.355811
Santiago, Rosana B., d’Albuquerque e Castro, J., Oliveira, Luiz E. (1993) Photoluminescence line shape associated withe-A0acceptor-related recombination in GaAs-(Ga,Al)As quantum wells under applied electric field. Physical Review B, 48 (7) 4498-4502 doi:10.1103/physrevb.48.4498
Betancur, F J, Mikhailov, I D, Oliveira, L E (1998) Shallow donor states in GaAs-(Ga, Al)As quantum dots with different potential shapes. Journal of Physics D: Applied Physics, 31. 3391-3396 doi:10.1088/0022-3727/31/23/013
 
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