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Hong, Q. Z., Zhu, J. G., Mayer, J. W. (1989) Solid phase epitaxy of a Ge‐Si alloy on [111] Si through a Pd2Si layer. Applied Physics Letters, 55 (8). 747-748 doi:10.1063/1.101794

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Reference TypeJournal (article/letter/editorial)
TitleSolid phase epitaxy of a Ge‐Si alloy on [111] Si through a Pd2Si layer
JournalApplied Physics Letters
AuthorsHong, Q. Z.Author
Zhu, J. G.Author
Mayer, J. W.Author
Year1989 (August 21)Volume55
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.101794Search in ResearchGate
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Mindat Ref. ID8489404Long-form Identifiermindat:1:5:8489404:1
GUID0
Full ReferenceHong, Q. Z., Zhu, J. G., Mayer, J. W. (1989) Solid phase epitaxy of a Ge‐Si alloy on [111] Si through a Pd2Si layer. Applied Physics Letters, 55 (8). 747-748 doi:10.1063/1.101794
Plain TextHong, Q. Z., Zhu, J. G., Mayer, J. W. (1989) Solid phase epitaxy of a Ge‐Si alloy on [111] Si through a Pd2Si layer. Applied Physics Letters, 55 (8). 747-748 doi:10.1063/1.101794
In(1989, August) Applied Physics Letters Vol. 55 (8) AIP Publishing

See Also

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Hong, Q. Z., Zhu, J. G., Mayer, J. W., Xia, W., Lau, S. S. (1992) Solid phase epitaxy of stressed and stress‐relaxed Ge‐Si alloys. Journal of Applied Physics, 71 (4). 1768-1773 doi:10.1063/1.351212
Yu, A. J., Mayer, J. W., Eaglesham, D. J., Poate, J. M. (1989) Ion beam induced epitaxy of deposited amorphous Si and Si‐Ge films. Applied Physics Letters, 54 (23). 2342-2344 doi:10.1063/1.101523
Lau, S. S., Liau, Z. L., Nicolet, M‐A., Mayer, J. W. (1977) Heterostructure by solid‐phase epitaxy in the Si 〈111〉/Pd/Si (amorphous) system. Journal of Applied Physics, 48 (3). 917-919 doi:10.1063/1.323708
Li, Jian, Hong, Q. Z., Mayer, J. W. (1989) Thermally and ion‐induced phase formation in a Pd/Ge bilayer. Journal of Applied Physics, 66 (8). 3600-3603 doi:10.1063/1.344066
Pretorius, R., Liau, Z. L., Lau, S. S., Nicolet, M‐A. (1976) Dissociation mechanism for solid‐phase epitaxy of silicon in the Si 〈100〉/Pd2Si/Si (amorphous) system. Applied Physics Letters, 29 (9). 598-600 doi:10.1063/1.89156
Hong, Stella Q., Hong, Q. Z., Mayer, James W. (1992) Regrowth rates and dopant activation of Sb+‐implanted Si‐Ge alloys. Journal of Applied Physics, 72 (8). 3821-3823 doi:10.1063/1.352282
Olowolafe, J. O., Nicolet, M‐A., Mayer, J. W. (1976) Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer. Journal of Applied Physics, 47 (12). 5182-5186 doi:10.1063/1.322591
Fathauer, R. W., Nieh, C. W., Xiao, Q. F., Hashimoto, Shin (1989) Growth of single‐crystal columns of CoSi2embedded in epitaxial Si on Si(111) by molecular beam epitaxy. Applied Physics Letters, 55 (3). 247-249 doi:10.1063/1.102383
Hong, Stella Q., Hong, Q. Z., Li, Jian, Mayer, J. W. (1994) Interdiffusion and reaction in Cu/PtSi/Si(100) systems. Journal of Applied Physics, 75 (8). 3959-3963 doi:10.1063/1.356016
Lau, S. S., Canali, C., Liau, Z. L., Nakamura, K., Nicolet, M.‐A., Mayer, J. W., Blattner, Richard J., Evans, C. A. (1976) Antimony doping of Si layers grown by solid‐phase epitaxy. Applied Physics Letters, 28 (3). 148-150 doi:10.1063/1.88670
Hong, Q. Z., Hung, L. S., Mayer, J. W. (1989) Ion mixing of near‐noble monosilicides with Si substrates. Journal of Applied Physics, 65 (9). 3395-3399 doi:10.1063/1.342655
 
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