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Yasuhira, N., Suemune, I., Kan, Y., Yamanishi, M. (1990) Selectively doped double‐heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laser. Applied Physics Letters, 56 (15). 1391-1393 doi:10.1063/1.102477

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Reference TypeJournal (article/letter/editorial)
TitleSelectively doped double‐heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laser
JournalApplied Physics Letters
AuthorsYasuhira, N.Author
Suemune, I.Author
Kan, Y.Author
Yamanishi, M.Author
Year1990 (April 9)Volume56
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.102477Search in ResearchGate
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Mindat Ref. ID8489917Long-form Identifiermindat:1:5:8489917:0
GUID0
Full ReferenceYasuhira, N., Suemune, I., Kan, Y., Yamanishi, M. (1990) Selectively doped double‐heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laser. Applied Physics Letters, 56 (15). 1391-1393 doi:10.1063/1.102477
Plain TextYasuhira, N., Suemune, I., Kan, Y., Yamanishi, M. (1990) Selectively doped double‐heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laser. Applied Physics Letters, 56 (15). 1391-1393 doi:10.1063/1.102477
In(1990, April) Applied Physics Letters Vol. 56 (15) AIP Publishing

See Also

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Honda, Yoshiaki, Suemune, Ikuo, Yasuhira, Naoki, Yamanishi, Masamichi (1991) Continuous-Wave Operation of a Lateral Current Injection Ridge Waveguide AlGaAs/GaAs Laser with a Selectively-Doped Heterostructure. Japanese Journal of Applied Physics, 30. 990-991 doi:10.1143/jjap.30.990
Suemune, I., Coldren, L. A., Yamanishi, M., Kan, Y. (1988) Extremely wide modulation bandwidth in a low threshold current strained quantum well laser. Applied Physics Letters, 53 (15). 1378-1380 doi:10.1063/1.99984
Harding, C. M., Waters, R. G. (1990) Long‐lived dry‐etched AlGaAs/GaAs ridge waveguide laser diodes. Applied Physics Letters, 56 (22). 2175-2176 doi:10.1063/1.102959
Suemune, I., Kishimoto, A., Hamaoka, K., Honda, Y., Kan, Y., Yamanishi, M. (1990) Dependence of GaAs etch rate on the angle of incidence of a hydrogen plasma beam excited by electron cyclotron resonance. Applied Physics Letters, 56 (24). 2393-2395 doi:10.1063/1.102926
Figueroa, Luis, Wang, Shyh (1977) Inverted‐ridge‐waveguide double‐heterostructure injection laser with current and lateral optical confinement. Applied Physics Letters, 31 (1). 45-47 doi:10.1063/1.89474
Obata, K., Yamanishi, M., Yamaoka, Y., Kan, Y., Hayashi, J., Suemune, I. (1990) Observation of optical bistability by charge‐induced self‐feedback in biased AlGaAs multiple quantum well structures. Applied Physics Letters, 57 (5). 419-421 doi:10.1063/1.103653
Kan, Y., Okuda, M., Yamanishi, M., Ohnishi, T., Mukaiyama, K., Suemune, I. (1990) Room‐temperature operation of three‐terminal quantum‐confined field‐effect light emitters. Applied Physics Letters, 56 (21). 2059-2061 doi:10.1063/1.102992
Inoue, Kaoru, Sakaki, Hiroyuki, Yoshino, Junji (1985) Field‐dependent transport of electrons in selectively doped AlGaAs/GaAs/AlGaAs double‐heterojunction systems. Applied Physics Letters, 47 (6). 614-616 doi:10.1063/1.96090
Suemune, I., Kunitsugu, Y., Tanaka, Y., Kan, Y., Yamanishi, M. (1988) New low‐temperature process for growth of GaAs on Si with metalorganic molecular beam epitaxy assisted by a hydrogen plasma. Applied Physics Letters, 53 (22). 2173-2175 doi:10.1063/1.100273
Inoue, Kaoru, Sakaki, Hiroyuki, Yoshino, Junji, Yoshioka, Yoshiaki (1985) Effects of substrate temperatures on the doping profiles of Si in selectively doped AlGaAs/GaAs/AlGaAs double‐heterojunction structures. Applied Physics Letters, 46 (10). 973-975 doi:10.1063/1.95785
Shigekawa, Naoteru, Furuta, Tomofumi, Maezawa, Koichi, Mizutani, Takashi (1990) Optically excited minority‐electron velocity in selectively Be‐doped AlGaAs/GaAs/AlGaAs single quantum wells. Applied Physics Letters, 56 (12). 1146-1148 doi:10.1063/1.102545
 
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