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Bour, D. P., Martinelli, Ramon U., Hawrylo, F. Z., Evans, G. A., Carlson, N. W., Gilbert, D. B. (1990) Improving the performance of strained InGaAs/AlGaAs single quantum well lasers. Applied Physics Letters, 56 (4). 318-320 doi:10.1063/1.102815

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Reference TypeJournal (article/letter/editorial)
TitleImproving the performance of strained InGaAs/AlGaAs single quantum well lasers
JournalApplied Physics Letters
AuthorsBour, D. P.Author
Martinelli, Ramon U.Author
Hawrylo, F. Z.Author
Evans, G. A.Author
Carlson, N. W.Author
Gilbert, D. B.Author
Year1990 (January 22)Volume56
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.102815Search in ResearchGate
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Mindat Ref. ID8490977Long-form Identifiermindat:1:5:8490977:8
GUID0
Full ReferenceBour, D. P., Martinelli, Ramon U., Hawrylo, F. Z., Evans, G. A., Carlson, N. W., Gilbert, D. B. (1990) Improving the performance of strained InGaAs/AlGaAs single quantum well lasers. Applied Physics Letters, 56 (4). 318-320 doi:10.1063/1.102815
Plain TextBour, D. P., Martinelli, Ramon U., Hawrylo, F. Z., Evans, G. A., Carlson, N. W., Gilbert, D. B. (1990) Improving the performance of strained InGaAs/AlGaAs single quantum well lasers. Applied Physics Letters, 56 (4). 318-320 doi:10.1063/1.102815
In(1990, January) Applied Physics Letters Vol. 56 (4) AIP Publishing

See Also

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Bour, D. P., Martinelli, Ramon U., Gilbert, D. B., Elbaum, L., Harvey, M. G. (1989) Operating characteristics of InGaAs/AlGaAs strained single quantum well lasers. Applied Physics Letters, 55 (15). 1501-1503 doi:10.1063/1.101590
Bour, D. P., Evans, G. A., Gilbert, D. B. (1989) High‐power conversion efficiency in a strained InGaAs/AlGaAs quantum well laser. Journal of Applied Physics, 65 (9). 3340-3343 doi:10.1063/1.342646
Evans, G. A., Bour, D. P., Carlson, N. W., Hammer, J. M., Lurie, M., Butler, J. K., Palfrey, S. L., Amantea, R., Carr, L. A., Hawrylo, F. Z., James, E. A., Kirk, J. B., Liew, S. K., Reichert, W. F. (1989) Coherent, monolithic two‐dimensional strained InGaAs/AlGaAs quantum well laser arrays using grating surface emission. Applied Physics Letters, 55 (26). 2721-2723 doi:10.1063/1.102256
Bour, D. P., Gilbert, D. B., Elbaum, L., Harvey, M. G. (1988) Continuous, high‐power operation of a strained InGaAs/AlGaAs quantum well laser. Applied Physics Letters, 53 (24). 2371-2373 doi:10.1063/1.100233
Liew, S. K., Carlson, N. W., Bour, D. P., Evans, G. A., Gieson, E. Van (1991) Demonstration of InGaAs/AlGaAs strained‐layer distributed‐feedback grating‐surface‐emitting lasers with a buried second‐order grating structure. Applied Physics Letters, 58 (3). 228-230 doi:10.1063/1.104697
Bour, D. P., Carlson, N. W., Evans, G. A., Liew, S. K., Kirk, J. B., Reichert, W. F. (1991) Surface‐emitting, distributed feedback InGaAs/AlGaAs lasers by organometallic vapor phase epitaxy. Journal of Applied Physics, 70 (9). 4687-4693 doi:10.1063/1.349060
Arent, D. J., Brovelli, L., Jäckel, H., Marclay, E., Meier, H. P. (1990) High‐power single‐mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates. Applied Physics Letters, 56 (20). 1939-1941 doi:10.1063/1.103028
Choi, H. K., Wang, C. A. (1990) InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency. Applied Physics Letters, 57 (4). 321-323 doi:10.1063/1.103678
Chand, Naresh, Dutta, N. K., Chu, S. N. G., Syrbu, A. V., Mereutza, A. Z., Yakovlev, V. P. (1993) High performance strained InGaAs/AlGaAs buried‐heterostructure quantum‐well lasers fabricated byin situetching and regrowth. Applied Physics Letters, 62 (15). 1818-1820 doi:10.1063/1.109559
Welch, D. F., Streifer, W., Schaus, C. F., Sun, S., Gourley, P. L. (1990) Gain characteristics of strained quantum well lasers. Applied Physics Letters, 56 (1). 10-12 doi:10.1063/1.102647
Offsey, S. D., Schaff, W. J., Tasker, P. J., Ennen, H., Eastman, L. F. (1989) Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 54 (25). 2527-2529 doi:10.1063/1.101083
 
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