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Iijima, K., Terashima, T., Yamamoto, K., Hirata, K., Bando, Y. (1990) Preparation of ferroelectric BaTiO3thin films by activated reactive evaporation. Applied Physics Letters, 56 (6). 527-529 doi:10.1063/1.103300

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Reference TypeJournal (article/letter/editorial)
TitlePreparation of ferroelectric BaTiO3thin films by activated reactive evaporation
JournalApplied Physics Letters
AuthorsIijima, K.Author
Terashima, T.Author
Yamamoto, K.Author
Hirata, K.Author
Bando, Y.Author
Year1990 (February 5)Volume56
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.103300Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8491114Long-form Identifiermindat:1:5:8491114:4
GUID0
Full ReferenceIijima, K., Terashima, T., Yamamoto, K., Hirata, K., Bando, Y. (1990) Preparation of ferroelectric BaTiO3thin films by activated reactive evaporation. Applied Physics Letters, 56 (6). 527-529 doi:10.1063/1.103300
Plain TextIijima, K., Terashima, T., Yamamoto, K., Hirata, K., Bando, Y. (1990) Preparation of ferroelectric BaTiO3thin films by activated reactive evaporation. Applied Physics Letters, 56 (6). 527-529 doi:10.1063/1.103300
In(1990, February) Applied Physics Letters Vol. 56 (6) AIP Publishing

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Terashima, T., Bando, Y., Iijima, K., Yamamoto, K., Hirata, K. (1988) Epitaxial growth of YBa2Cu3O7−xthin films on (110) SrTiO3single crystals by activated reactive evaporation. Applied Physics Letters, 53 (22). 2232-2234 doi:10.1063/1.100511
Terashima, T., Bando, Y., Iijima, K., Yamamoto, K., Hirata, K., Hayashi, K., Matsuda, Y., Komiyama, S. (1990) Insitugrowth of superconducting Nd‐Ce‐Cu‐O thin films. Applied Physics Letters, 56 (7). 677-679 doi:10.1063/1.103309
Hirata, K., Yamamoto, K., Iijima, K., Takada, J., Terashima, T., Bando, Y., Mazaki, H. (1990) Tunneling measurements on superconductor/insulator/superconductor junctions using single‐crystal YBa2Cu3O7−xthin films. Applied Physics Letters, 56 (7). 683-685 doi:10.1063/1.103311
KAMIGAKI, K, TERAUCHI, H, TERASHIMA, T, BANDO, Y, IIJIMA, K, YAMAMOTO, K, HIRATA, K (1990) X-ray study on ultra-thin YBa2Cu3O7−δ single crystal film in situ grown by an activated reactive evaporation method. Solid State Ionics, 40. 815-818 doi:10.1016/0167-2738(90)90128-e
Kamigaki, K., Terauchi, H., Terashima, T., Bando, Y., Iijima, K., Yamamoto, K., Hirata, K., Hayashi, K., Nakagawa, I., Tomii, Y. (1991) Anomalous misfit strain relaxation in ultrathin YBa2Cu3O7−δepitaxial films. Journal of Applied Physics, 69 (6). 3653-3662 doi:10.1063/1.348513
Takada, J., Terashima, T., Bando, Y., Mazaki, H., Iijima, K., Yamamoto, K., Hirata, K. (1988) Tunnel junctions using oxide superconducting thin films epitaxially grown on SrTiO3. Applied Physics Letters, 53 (26). 2689-2691 doi:10.1063/1.100546
Iijima, K., Terashima, T., Bando, Y., Kamigaki, K., Terauchi, H. (1992) Atomic layer growth of oxide thin films with perovskite‐type structure by reactive evaporation. Journal of Applied Physics, 72 (7). 2840-2845 doi:10.1063/1.351536
Terashima, Takahito, Iijima, Kenji, Yamamoto, Kazunuki, Hirata, Kazuto, Bando, Yoshichika, Takada, Toshio (1989) In SituReflection High Energy Electron Diffraction Observation During Growth of YBa2Cu3O7-xThin Films by Activated Reactive Evaporation. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l987
Terashima, Takahito, Iijima, Kenji, Yamamoto, Kazunuki, Bando, Yoshichika, Mazaki, Hiromasa (1988) Single-Crystal YBa2Cu3O7-xThin Films by Activated Reactive Evaporation. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l91
Terashima, T., Bando, Y., Iijima, K., Yamamoto, K., Hirata, K., Hayashi, K., Kamigaki, K., Terauchi, H. (1990) Reflection high-energy electron diffraction oscillations during epitaxial growth of high-temperature superconducting oxides. Physical Review Letters, 65 (21). 2684-2687 doi:10.1103/physrevlett.65.2684
Yano, Y., Iijima, K., Daitoh, Y., Terashima, T., Bando, Y., Watanabe, Y., Kasatani, H., Terauchi, H. (1994) Epitaxial growth and dielectric properties of BaTiO3films on Pt electrodes by reactive evaporation. Journal of Applied Physics, 76 (12). 7833-7838 doi:10.1063/1.357891
 
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