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Tiwari, A. N., Floeder, W., Blunier, S., Zogg, H., Weibel, H. (1990) Molecular beam epitaxial growth of (100) oriented CdTe on Si (100) using BaF2‐CaF2as a buffer. Applied Physics Letters, 57 (11). 1108-1110 doi:10.1063/1.103506

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Reference TypeJournal (article/letter/editorial)
TitleMolecular beam epitaxial growth of (100) oriented CdTe on Si (100) using BaF2‐CaF2as a buffer
JournalApplied Physics Letters
AuthorsTiwari, A. N.Author
Floeder, W.Author
Blunier, S.Author
Zogg, H.Author
Weibel, H.Author
Year1990 (September 10)Volume57
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.103506Search in ResearchGate
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Mindat Ref. ID8491485Long-form Identifiermindat:1:5:8491485:9
GUID0
Full ReferenceTiwari, A. N., Floeder, W., Blunier, S., Zogg, H., Weibel, H. (1990) Molecular beam epitaxial growth of (100) oriented CdTe on Si (100) using BaF2‐CaF2as a buffer. Applied Physics Letters, 57 (11). 1108-1110 doi:10.1063/1.103506
Plain TextTiwari, A. N., Floeder, W., Blunier, S., Zogg, H., Weibel, H. (1990) Molecular beam epitaxial growth of (100) oriented CdTe on Si (100) using BaF2‐CaF2as a buffer. Applied Physics Letters, 57 (11). 1108-1110 doi:10.1063/1.103506
In(1990, September) Applied Physics Letters Vol. 57 (11) AIP Publishing

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Tiwari, A.N., Floeder, W., Blunier, S., Zogg, H., Proctor, M.J. (1991) Heteroepitaxy of CdTe(100) on Si(100) using BaF2−CaF2(100) buffer layers. Journal of Crystal Growth, 111 (1). 730-735 doi:10.1016/0022-0248(91)91071-h
Tiwari, A. N., Blunier, S., Zogg, H. (1992) Study of As‐doping and surface reconstructions in molecular beam epitaxy grown CdTe(100) on BaF2‐CaF2/Si(100). Applied Physics Letters, 60 (5). 621-623 doi:10.1063/1.106573
Tiwari, A. N., Blunier, S., Zogg, H., Lerch, Ph., Marcenat, F., Martinoli, P. (1992) Epitaxial growth of superconducting YBa2Cu3O7−xon Si(100) with CaF2as intermediate buffer. Journal of Applied Physics, 71 (10). 5095-5098 doi:10.1063/1.350611
Blunier, S., Zogg, H., Weibel, H. (1988) Growth of lattice‐mismatched stacked epitaxial CaF2‐SrF2‐BaF2layers on (100) oriented Si substrates. Applied Physics Letters, 53 (16). 1512-1514 doi:10.1063/1.100432
Zogg, H., Blunier, S. (1986) Molecular beam epitaxial growth of high structural perfection CdTe on Si using a (Ca,Ba)F2buffer layer. Applied Physics Letters, 49 (22). 1531-1533 doi:10.1063/1.97272
Tiwari, A. N., Blunier, S., Kessler, K., Zelezny, V., Zogg, H. (1994) Direct growth of heteroepitaxial CuInSe2layers on Si substrates. Applied Physics Letters, 65 (18). 2299-2301 doi:10.1063/1.112723
Müller, P., Fach, A., John, J., Tiwari, A. N., Zogg, H., Kostorz, G. (1996) Structure of epitaxial PbSe grown on Si(111) and Si(100) without a fluoride buffer layer. Journal of Applied Physics, 79 (4). 1911-1916 doi:10.1063/1.361076
Tiwari, A. N., Blunier, S., Filzmoser, M., Zogg, H., Schmid, D., Schock, H. W. (1994) Characterization of heteroepitaxial CuIn3Se5and CuInSe2layers on Si substrates. Applied Physics Letters, 65 (26). 3347-3349 doi:10.1063/1.112387
Sporken, R., Lange, M. D., Masset, C., Faurie, J. P. (1990) Molecular beam epitaxial growth of CdTe on 5‐in.‐diam Si (100). Applied Physics Letters, 57 (14). 1449-1451 doi:10.1063/1.103366
Wang, H., Tiwari, Ashutosh, Kvit, A., Zhang, X., Narayan, J. (2002) Epitaxial growth of TaN thin films on Si(100) and Si(111) using a TiN buffer layer. Applied Physics Letters, 80 (13). 2323-2325 doi:10.1063/1.1466522
Bhat, Ishwara, Wang, Wen‐Sheng (1994) Growth of (100) oriented CdTe on Si using Ge as a buffer layer. Applied Physics Letters, 64 (5). 566-568 doi:10.1063/1.111105
 
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