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Crowder, M. S., Tober, E. D., Kanicki, J. (1990) Photobleaching of light‐induced paramagnetic defects in amorphous silicon nitride films. Applied Physics Letters, 57 (19). 1995-1997 doi:10.1063/1.104151

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Reference TypeJournal (article/letter/editorial)
TitlePhotobleaching of light‐induced paramagnetic defects in amorphous silicon nitride films
JournalApplied Physics Letters
AuthorsCrowder, M. S.Author
Tober, E. D.Author
Kanicki, J.Author
Year1990 (November 5)Volume57
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.104151Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8492110Long-form Identifiermindat:1:5:8492110:5
GUID0
Full ReferenceCrowder, M. S., Tober, E. D., Kanicki, J. (1990) Photobleaching of light‐induced paramagnetic defects in amorphous silicon nitride films. Applied Physics Letters, 57 (19). 1995-1997 doi:10.1063/1.104151
Plain TextCrowder, M. S., Tober, E. D., Kanicki, J. (1990) Photobleaching of light‐induced paramagnetic defects in amorphous silicon nitride films. Applied Physics Letters, 57 (19). 1995-1997 doi:10.1063/1.104151
In(1990, November) Applied Physics Letters Vol. 57 (19) AIP Publishing

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Tober, E. D., Kanicki, J., Crowder, M. S. (1991) Thermal annealing of light−induced metastable defects in hydrogenated amorphous silicon nitride. Applied Physics Letters, 59 (14). 1723-1725 doi:10.1063/1.106230
Kanicki, J., Sankaran, M., Gelatos, A., Crowder, M. S., Tober, E. D. (1990) Stretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride. Applied Physics Letters, 57 (7). 698-700 doi:10.1063/1.104255
Warren, W. L., Seager, C. H., Kanicki, J., Crowder, M. S., Sigari, E. (1995) Ultraviolet light induced annihilation of silicon dangling bonds in hydrogenated amorphous silicon nitride films. Journal of Applied Physics, 77 (11). 5730-5735 doi:10.1063/1.359593
Krick, David T., Lenahan, P. M., Kanicki, J. (1987) Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride. Applied Physics Letters, 51 (8). 608-610 doi:10.1063/1.98362
Gelatos, A. V., Kanicki, J. (1990) Bias stress‐induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the ‘‘carrier‐induced defect creation’’ model correct?. Applied Physics Letters, 57 (12). 1197-1199 doi:10.1063/1.103484
Seager, C. H., Kanicki, J. (1990) Photodarkening and bleaching in amorphous silicon nitride. Applied Physics Letters, 57 (14). 1378-1380 doi:10.1063/1.104089
Hoinkis, M., Tober, E. D., White, R. L., Crowder, M. S. (1992) Paramagnetic centers of amorphous carbon thin films: Influence of hydrogen content and O2permeation. Applied Physics Letters, 61 (22). 2653-2655 doi:10.1063/1.108098
Jousse, D., Kanicki, J. (1989) Investigation of the light‐induced effects in nitrogen‐rich silicon nitride films. Applied Physics Letters, 55 (11). 1112-1114 doi:10.1063/1.101673
Kanicki, J., Warren, W.L., Seager, C.H., Crowder, M.S., Lenahan, P.M. (1991) Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films. Journal of Non-Crystalline Solids, 137. 291-294 doi:10.1016/s0022-3093(05)80113-9
Kanicki, J., Jousse, D., Gelatos, A., Crowder, M.S. (1989) Light-induced effects in hydrogenated amorphous nitrogen-rich silicon nitride films. Journal of Non-Crystalline Solids, 114. 612-614 doi:10.1016/0022-3093(89)90666-2
Warren, W. L., Lenahan, P. M., Kanicki, J. (1991) Electrically neutral nitrogen dangling‐bond defects in amorphous hydrogenated silicon nitride thin films. Journal of Applied Physics, 70 (4). 2220-2225 doi:10.1063/1.349433
 
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