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Kozuch, D. M., Stavola, Michael, Pearton, S. J., Abernathy, C. R., Lopata, J. (1990) Hydrogen in carbon‐doped GaAs grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 57 (24). 2561-2563 doi:10.1063/1.103817

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Reference TypeJournal (article/letter/editorial)
TitleHydrogen in carbon‐doped GaAs grown by metalorganic molecular beam epitaxy
JournalApplied Physics Letters
AuthorsKozuch, D. M.Author
Stavola, MichaelAuthor
Pearton, S. J.Author
Abernathy, C. R.Author
Lopata, J.Author
Year1990 (December 10)Volume57
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.103817Search in ResearchGate
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Mindat Ref. ID8492503Long-form Identifiermindat:1:5:8492503:1
GUID0
Full ReferenceKozuch, D. M., Stavola, Michael, Pearton, S. J., Abernathy, C. R., Lopata, J. (1990) Hydrogen in carbon‐doped GaAs grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 57 (24). 2561-2563 doi:10.1063/1.103817
Plain TextKozuch, D. M., Stavola, Michael, Pearton, S. J., Abernathy, C. R., Lopata, J. (1990) Hydrogen in carbon‐doped GaAs grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 57 (24). 2561-2563 doi:10.1063/1.103817
In(1990, December) Applied Physics Letters Vol. 57 (24) AIP Publishing

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Abernathy, C. R., Pearton, S. J., Manasreh, M. O., Fischer, D. W., Talwar, D. N. (1990) Incorporation of carbon in heavily doped AlxGa1−xAs grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 57 (3). 294-296 doi:10.1063/1.103718
Kozuch, D. M., Stavola, Michael, Pearton, S. J., Abernathy, C. R., Hobson, W. S. (1993) Passivation of carbon‐doped GaAs layers by hydrogen introduced by annealing and growth ambients. Journal of Applied Physics, 73 (8). 3716-3724 doi:10.1063/1.352902
Swaminathan, V., Asom, M. T., Livescu, G., Geva, M., Stevie, F. A., Pearton, S. J., Lopata, J. (1990) Hydrogen passivation of Si δ‐doped GaAs grown by molecular beam epitaxy. Applied Physics Letters, 57 (27). 2928-2930 doi:10.1063/1.103733
Abernathy, C. R., Pearton, S. J., Caruso, R., Ren, F., Kovalchik, J. (1989) Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy. Applied Physics Letters, 55 (17). 1750-1752 doi:10.1063/1.102206
Abernathy, C. R., MacKenzie, J. D., Pearton, S. J., Hobson, W. S. (1995) CCl4 doping of GaN grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 66 (15). 1969-1971 doi:10.1063/1.113293
Ren, F., Abernathy, C. R., Pearton, S. J. (1991) Novel carbon‐dopedp‐channel GaAs metal‐semiconductor field‐effect transistor grown by metalorganic molecular beam epitaxy. Journal of Applied Physics, 70 (5). 2885-2886 doi:10.1063/1.349357
MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Chu, S. N. G. (1995) Annealing behavior of AlxGa1−xAs:C grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 66 (11). 1397-1399 doi:10.1063/1.113213
Pearton, S. J., Abernathy, C. R., Lopata, J. (1991) Thermal stability of dopant‐hydrogen pairs in GaAs. Applied Physics Letters, 59 (27). 3571-3573 doi:10.1063/1.105635
Abernathy, C. R., Wisk, P. W., Pearton, S. J., Hobson, W. S., Fuoss, P. H., Lamelas, F. J., Chu, S. N. G., Ren, F. (1992) Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 60 (11). 1339-1341 doi:10.1063/1.107336
MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Krishnamoorthy, V., Bharatan, S., Jones, K. S., Wilson, R. G. (1995) Growth of AlN by metalorganic molecular beam epitaxy. Applied Physics Letters, 67 (2). 253-255 doi:10.1063/1.114684
Hobson, W. S., Pearton, S. J., Kozuch, D. M., Stavola, M. (1992) Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4. Applied Physics Letters, 60 (26). 3259-3261 doi:10.1063/1.106712
 
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