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Wu, Chuanyong, Lao, Pudong, Shen, S. C. (1991) Raman scattering from InxGa1−xAs/GaAs strained‐layer superlattices. Applied Physics Letters, 58 (14). 1491-1493 doi:10.1063/1.105181

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Reference TypeJournal (article/letter/editorial)
TitleRaman scattering from InxGa1−xAs/GaAs strained‐layer superlattices
JournalApplied Physics Letters
AuthorsWu, ChuanyongAuthor
Lao, PudongAuthor
Shen, S. C.Author
Year1991 (April 8)Volume58
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.105181Search in ResearchGate
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Mindat Ref. ID8493722Long-form Identifiermindat:1:5:8493722:1
GUID0
Full ReferenceWu, Chuanyong, Lao, Pudong, Shen, S. C. (1991) Raman scattering from InxGa1−xAs/GaAs strained‐layer superlattices. Applied Physics Letters, 58 (14). 1491-1493 doi:10.1063/1.105181
Plain TextWu, Chuanyong, Lao, Pudong, Shen, S. C. (1991) Raman scattering from InxGa1−xAs/GaAs strained‐layer superlattices. Applied Physics Letters, 58 (14). 1491-1493 doi:10.1063/1.105181
In(1991, April) Applied Physics Letters Vol. 58 (14) AIP Publishing

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Lockwood, D. J., Dharma‐wardana, M. W. C., Moore, W. T., Devine, R. L. S. (1987) Raman scattering study of folded acoustic phonons in GaAs/InxGa1−xAs strained‐layer superlattices. Applied Physics Letters, 51 (5). 361-363 doi:10.1063/1.98441
Jogai, B. (1991) Valence‐band offset in strained GaAs‐InxGa1−xAs superlattices. Applied Physics Letters, 59 (11). 1329-1331 doi:10.1063/1.105490
Lemos, V., Ritter, T., Weinstein, B. A. (1992) Anomalies in the pressure response of the Raman modes in (211)‐oriented InxGa1−xAs/GaAs strained‐layer superlattices. Applied Physics Letters, 61 (12). 1417-1419 doi:10.1063/1.107556
Niki, S., Kellner, A. L., Lin, S. C., Cheng, A., Williams, A. R., Chang, W. S. C., Wieder, H. H. (1990) Electroabsorption effects in InxGa1−xAs/GaAs strained‐layer superlattices. Applied Physics Letters, 56 (5). 475-477 doi:10.1063/1.102770
Nakayama, M., Kubota, K., Kanata, T., Kato, H., Chika, S., Sano, N. (1985) Raman study of GaAs‐InxAl1−xAs strained‐layer superlattices. Journal of Applied Physics, 58 (11). 4342-4345 doi:10.1063/1.335522
Inoki, C. K., Lemos, V., Cerdeira, F., Vásquez‐López, C. (1993) Strain determination in InxGa1−xAs/GaAs strained‐layer superlattices by photomodulated reflectance. Journal of Applied Physics, 73 (7). 3266-3270 doi:10.1063/1.352973
Gourley, P. L., Wiczer, J. J., Zipperian, T. E., Dawson, L. R. (1986) Diffusion dynamics of holes in InxGa1−xAs/GaAs strained‐layer superlattices. Applied Physics Letters, 49 (2). 100-102 doi:10.1063/1.97398
Rajan, K., Devine, R., Moore, W. T., Maigné, P. (1987) Dislocation structure in InxGa1−xAs/GaAs strained‐layer superlattices. Journal of Applied Physics, 62 (5). 1713-1716 doi:10.1063/1.339598
Tang, W. C., Rosen, H. J., Guha, S., Madhukar, A. (1991) Raman microprobe study of narrow InxGa1−xAs stripes on patterned GaAs(100) substrates. Applied Physics Letters, 58 (15). 1644-1646 doi:10.1063/1.105151
Fritz, I. J., Picraux, S. T., Dawson, L. R., Drummond, T. J., Laidig, W. D., Anderson, N. G. (1985) Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices. Applied Physics Letters, 46 (10). 967-969 doi:10.1063/1.95783
Niki, S., Lin, C. L., Chang, W. S. C., Wieder, H. H. (1989) Band‐edge discontinuities of strained‐layer InxGa1−xAs/GaAs heterojunctions and quantum wells. Applied Physics Letters, 55 (13). 1339-1341 doi:10.1063/1.101649
 
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