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Chaiyasena, I. A., Lenahan, P. M., Dunn, G. J. (1991) Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon. Applied Physics Letters, 58 (19). 2141-2143 doi:10.1063/1.104986

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Reference TypeJournal (article/letter/editorial)
TitleIdentification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon
JournalApplied Physics Letters
AuthorsChaiyasena, I. A.Author
Lenahan, P. M.Author
Dunn, G. J.Author
Year1991 (May 13)Volume58
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.104986Search in ResearchGate
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Mindat Ref. ID8494082Long-form Identifiermindat:1:5:8494082:7
GUID0
Full ReferenceChaiyasena, I. A., Lenahan, P. M., Dunn, G. J. (1991) Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon. Applied Physics Letters, 58 (19). 2141-2143 doi:10.1063/1.104986
Plain TextChaiyasena, I. A., Lenahan, P. M., Dunn, G. J. (1991) Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon. Applied Physics Letters, 58 (19). 2141-2143 doi:10.1063/1.104986
In(1991, May) Applied Physics Letters Vol. 58 (19) AIP Publishing

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Chaiyasena, I. A., Lenahan, P. M., Dunn, G. J. (1992) Electron spin resonance investigation of hole trapping in reoxidized nitrided silicon dioxide. Journal of Applied Physics, 72 (2). 820-821 doi:10.1063/1.351823
Warren, W. L., Kanicki, J., Robertson, J., Lenahan, P. M. (1991) Energy level of the nitrogen dangling bond in amorphous silicon nitride. Applied Physics Letters, 59 (14). 1699-1701 doi:10.1063/1.106222
Warren, W. L., Lenahan, P. M., Kanicki, J. (1991) Electrically neutral nitrogen dangling‐bond defects in amorphous hydrogenated silicon nitride thin films. Journal of Applied Physics, 70 (4). 2220-2225 doi:10.1063/1.349433
Conley, J. F., Lenahan, P. M. (1993) Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2thin films on silicon. Applied Physics Letters, 62 (1). 40-42 doi:10.1063/1.108812
Warren, W. L., Lenahan, P. M. (1991) Comment on ‘‘E’ centers and nitrogen‐related defects in silicon dioxide films’’. Applied Physics Letters, 59 (22). 2904 doi:10.1063/1.105847
Warren, W. L., Lenahan, P. M. (1989) 29Si hyperfine spectra and structure ofE’ dangling‐bond defects in plasma‐enhanced chemical‐vapor deposited silicon dioxide films on silicon. Journal of Applied Physics, 66 (11). 5488-5491 doi:10.1063/1.344464
Lenahan, P. M., Curry, Sean E. (1990) First observation of the29Si hyperfine spectra of silicon dangling bond centers in silicon nitride. Applied Physics Letters, 56 (2). 157-159 doi:10.1063/1.103278
Cartier, E., Buchanan, D. A., Dunn, G. J. (1994) Atomic hydrogen‐induced interface degradation of reoxidized‐nitrided silicon dioxide on silicon. Applied Physics Letters, 64 (7). 901-903 doi:10.1063/1.110990
Warren, William L., Lenahan, P. M., Curry, Sean E. (1990) First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride. Physical Review Letters, 65 (2). 207-210 doi:10.1103/physrevlett.65.207
Lenahan, P. M., Dressendorfer, P. V. (1982) Effect of bias on radiation‐induced paramagnetic defects at the silicon‐silicon dioxide interface. Applied Physics Letters, 41 (6). 542-544 doi:10.1063/1.93583
DiMaria, D. J., Stathis, J. H. (1991) Trapping and trap creation studies on nitrided and reoxidized‐nitrided silicon dioxide films on silicon. Journal of Applied Physics, 70 (3). 1500-1509 doi:10.1063/1.350357
 
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