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Nietzke, R., Elsässer, W., Baranov, A. N., Wünstel, K. (1991) Generation of 170 GHz optical sidebands of a single‐mode semiconductor laser by nonlinear intracavity interaction. Applied Physics Letters, 58 (6). 554-556 doi:10.1063/1.104584

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Reference TypeJournal (article/letter/editorial)
TitleGeneration of 170 GHz optical sidebands of a single‐mode semiconductor laser by nonlinear intracavity interaction
JournalApplied Physics Letters
AuthorsNietzke, R.Author
Elsässer, W.Author
Baranov, A. N.Author
Wünstel, K.Author
Year1991 (February 11)Volume58
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.104584Search in ResearchGate
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Mindat Ref. ID8495000Long-form Identifiermindat:1:5:8495000:0
GUID0
Full ReferenceNietzke, R., Elsässer, W., Baranov, A. N., Wünstel, K. (1991) Generation of 170 GHz optical sidebands of a single‐mode semiconductor laser by nonlinear intracavity interaction. Applied Physics Letters, 58 (6). 554-556 doi:10.1063/1.104584
Plain TextNietzke, R., Elsässer, W., Baranov, A. N., Wünstel, K. (1991) Generation of 170 GHz optical sidebands of a single‐mode semiconductor laser by nonlinear intracavity interaction. Applied Physics Letters, 58 (6). 554-556 doi:10.1063/1.104584
In(1991, February) Applied Physics Letters Vol. 58 (6) AIP Publishing

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Nietzke, R., Fenz, P., Elsässer, W., Göbel, E. O. (1987) Cascade four‐wave mixing in semiconductor lasers. Applied Physics Letters, 51 (17). 1298-1300 doi:10.1063/1.98708
Sanders, Steve, Eng, Lars, Paslaski, Joel, Yariv, Amnon (1990) 108 GHz passive mode locking of a multiple quantum well semiconductor laser with an intracavity absorber. Applied Physics Letters, 56 (4). 310-311 doi:10.1063/1.103187
Elsässer, W. (1986) Inter‐intramode correlation spectroscopy: A new experimental technique to study mode interaction in semiconductor lasers. Applied Physics Letters, 48 (20). 1323-1325 doi:10.1063/1.96948
Zou, W. X., Young, D. B., Law, K‐K., Merz, J. L. (1993) Low‐threshold InGaAs/GaAs/AlGaAs quantum‐well laser with an intracavity optical modulator by impurity‐induced disordering. Applied Physics Letters, 62 (6). 556-558 doi:10.1063/1.108909
Katzenellenbogen, N., Grischkowsky, D. (1991) Efficient generation of 380 fs pulses of THz radiation by ultrafast laser pulse excitation of a biased metal‐semiconductor interface. Applied Physics Letters, 58 (3). 222-224 doi:10.1063/1.104695
Pelusi, M. D., Liu, H. F., Novak, D., Ogawa, Y. (1997) THz optical beat frequency generation from a single mode locked semiconductor laser. Applied Physics Letters, 71 (4). 449-451 doi:10.1063/1.119575
Datta, P. K., Mukhopadhyay, S., Samanta, G. K., Das, S. K., Agnesi, A. (2005) Realization of inverse saturable absorption by intracavity third-harmonic generation for efficient nonlinear mirror mode-locking. Applied Physics Letters, 86 (15). 151105pp. doi:10.1063/1.1899235
Ducharme, Stephen, Risk, W. P., Moerner, W. E., Lee, Victor Y., Twieg, R. J., Bjorklund, G. C. (1990) Intracavity frequency doubling of a Nd:YAG laser with an organic nonlinear optical crystal. Applied Physics Letters, 57 (6). 537-539 doi:10.1063/1.103640
Kitayama, Ken‐ichi, Wang, Shyh (1984) A newQswitching method by intracavity phase modulation in a semiconductor laser. Applied Physics Letters, 44 (6). 571-573 doi:10.1063/1.94843
Katz, J., Margalit, S., Yariv, A. (1983) Diffraction coupled phase‐locked semiconductor laser array. Applied Physics Letters, 42 (7). 554-556 doi:10.1063/1.94025
Uomi, K., Tsuchiya, T., Aoki, M., Chinone, N. (1991) Oscillation wavelength and laser structure dependence of nonlinear damping effect in semiconductor lasers. Applied Physics Letters, 58 (7). 675-677 doi:10.1063/1.104565
 
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