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Coffa, S., Poate, J. M. (1991) Hydrogen induced detrapping of transition metals in amorphous silicon. Applied Physics Letters, 59 (18). 2296-2298 doi:10.1063/1.106048

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Reference TypeJournal (article/letter/editorial)
TitleHydrogen induced detrapping of transition metals in amorphous silicon
JournalApplied Physics Letters
AuthorsCoffa, S.Author
Poate, J. M.Author
Year1991 (October 28)Volume59
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.106048Search in ResearchGate
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Mindat Ref. ID8496075Long-form Identifiermindat:1:5:8496075:1
GUID0
Full ReferenceCoffa, S., Poate, J. M. (1991) Hydrogen induced detrapping of transition metals in amorphous silicon. Applied Physics Letters, 59 (18). 2296-2298 doi:10.1063/1.106048
Plain TextCoffa, S., Poate, J. M. (1991) Hydrogen induced detrapping of transition metals in amorphous silicon. Applied Physics Letters, 59 (18). 2296-2298 doi:10.1063/1.106048
In(1991, October) Applied Physics Letters Vol. 59 (18) AIP Publishing

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Coffa, S., Poate, J. M., Jacobson, D. C., Polman, A. (1991) Impurity trapping and gettering in amorphous silicon. Applied Physics Letters, 58 (25). 2916-2918 doi:10.1063/1.104721
Coffa, S., Poate, J. M. (1993) Dopant compensation effects on impurity trapping and electrical resistivity of ion implanted amorphous silicon. Applied Physics Letters, 63 (8). 1080-1082 doi:10.1063/1.109839
Utsunomiya, Michito, Yoshida, Akira (1988) Strain dependence ofp‐i‐nhydrogenated amorphous silicon junctions. Applied Physics Letters, 53 (23). 2296-2298 doi:10.1063/1.100258
Bean, J. C., Poate, J. M. (1980) Evidence for void interconnection in evaporated amorphous silicon from epitaxial crystallization measurements. Applied Physics Letters, 36 (1). 59-61 doi:10.1063/1.91316
Tober, E. D., Kanicki, J., Crowder, M. S. (1991) Thermal annealing of light−induced metastable defects in hydrogenated amorphous silicon nitride. Applied Physics Letters, 59 (14). 1723-1725 doi:10.1063/1.106230
Polman, A., Jacobson, D. C., Coffa, S., Poate, J. M., Roorda, S., Sinke, W. C. (1990) Defect states of amorphous Si probed by the diffusion and solubility of Cu. Applied Physics Letters, 57 (12). 1230-1232 doi:10.1063/1.103493
Vanecek, M., Holoubek, J., Shah, A. (1991) Optical study of microvoids, voids, and local inhomogeneities in amorphous silicon. Applied Physics Letters, 59 (18). 2237-2239 doi:10.1063/1.106081
Benton, J. L., Libertino, S., Kringho/j, P., Eaglesham, D. J., Poate, J. M., Coffa, S. (1997) Evolution from point to extended defects in ion implanted silicon. Journal of Applied Physics, 82 (1). 120-125 doi:10.1063/1.365583
Elliman, R. G., Jacobson, D. C., Linnros, J., Poate, J. M. (1987) Ion‐beam‐induced epitaxy and interfacial segregation of Au in amorphous silicon. Applied Physics Letters, 51 (5). 314-316 doi:10.1063/1.98454
Peercy, P. S., Poate, J. M., Thompson, Michael O., Tsao, J. Y. (1986) Surface solidification and impurity segregation in amorphous silicon. Applied Physics Letters, 48 (24). 1651-1653 doi:10.1063/1.96843
Coffa, S., Poate, J. M., Jacobson, D. C., Frank, W., Gustin, W. (1992) Determination of diffusion mechanisms in amorphous silicon. Physical Review B, 45 (15) 8355-8358 doi:10.1103/physrevb.45.8355
 
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