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Hu, Yuming, Stapleton, Shawn (1991) Response to ‘‘Comment on ‘Quantum capacitance of resonant tunneling diodes’ ’’. Applied Physics Letters, 59 (18). 2336 doi:10.1063/1.106062

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Reference TypeJournal (article/letter/editorial)
TitleResponse to ‘‘Comment on ‘Quantum capacitance of resonant tunneling diodes’ ’’
JournalApplied Physics Letters
AuthorsHu, YumingAuthor
Stapleton, ShawnAuthor
Year1991 (October 28)Volume59
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.106062Search in ResearchGate
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Mindat Ref. ID8496103Long-form Identifiermindat:1:5:8496103:3
GUID0
Full ReferenceHu, Yuming, Stapleton, Shawn (1991) Response to ‘‘Comment on ‘Quantum capacitance of resonant tunneling diodes’ ’’. Applied Physics Letters, 59 (18). 2336 doi:10.1063/1.106062
Plain TextHu, Yuming, Stapleton, Shawn (1991) Response to ‘‘Comment on ‘Quantum capacitance of resonant tunneling diodes’ ’’. Applied Physics Letters, 59 (18). 2336 doi:10.1063/1.106062
In(1991, October) Applied Physics Letters Vol. 59 (18) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Hu, Yuming, Stapleton, Shawn (1991) Quantum capacitance of resonant tunneling diodes. Applied Physics Letters, 58 (2). 167-169 doi:10.1063/1.104961
Luryi, Serge (1991) Comment on ‘‘Quantum capacitance of resonant tunneling diodes’’. Applied Physics Letters, 59 (18). 2335-2336 doi:10.1063/1.106061
Hu, Yuming, Stapleton, Shawn (1993) Sequential tunneling versus resonant tunneling in a double‐barrier diode. Journal of Applied Physics, 73 (12). 8633-8636 doi:10.1063/1.353395
Hu, Yuming, Stapleton, Shawn (1992) Effect of scattering on intrinsic bistability in a resonant tunneling diode. Journal of Applied Physics, 72 (1). 294-296 doi:10.1063/1.352135
Hu, Yuming, Stapleton, Shawn (1993) Self‐consistent model of a double‐barrier resonant tunneling diode: Dependence of intrinsic bistability on structural parameters. Journal of Applied Physics, 73 (10). 5254-5263 doi:10.1063/1.353754
Wei, T., Stapleton, S. (1994) Effect of spacer layers on capacitance of resonant tunneling diodes. Journal of Applied Physics, 76 (2). 1287-1290 doi:10.1063/1.357788
Lin, Yayun, van Rheenen, Arthur D., Chou, Stephen Y. (1991) Current fluctuations in double‐barrier quantum well resonant tunneling diodes. Applied Physics Letters, 59 (9). 1105-1107 doi:10.1063/1.106358
Hu, Y., Stapleton, S. P. (1992) Capacitance of a Resonant Tunneling Diode. Japanese Journal of Applied Physics, 31. 23-25 doi:10.1143/jjap.31.23
Wolak, Edmund, Harmand, Jean Christophe, Matsuno, Toshinobu, Inoue, Kaoru, Narusawa, Tadashi (1991) InyGa1−yAs/InyAl1−yAs resonant tunneling diodes on GaAs. Applied Physics Letters, 59 (1). 111-113 doi:10.1063/1.105562
Ismail, K., Meyerson, B. S., Wang, P. J. (1991) Electron resonant tunneling in Si/SiGe double barrier diodes. Applied Physics Letters, 59 (8). 973-975 doi:10.1063/1.106319
Wei, T., Stapleton, S., Berolo, E. (1993) Equivalent circuit and capacitance of double barrier resonant tunneling diode. Journal of Applied Physics, 73 (2). 829-834 doi:10.1063/1.353345
 
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