Fleischer, S., Liu, Z. H., Lai, P. T., Ko, P. K., Cheng, Y. C. (1991) Off‐state leakage currents in n‐channel metal‐oxide‐semiconductor field‐effect transistors with 10‐nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric. Applied Physics Letters, 59 (23). 3006-3008 doi:10.1063/1.105826
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Off‐state leakage currents in n‐channel metal‐oxide‐semiconductor field‐effect transistors with 10‐nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric | ||
| Journal | Applied Physics Letters | ||
| Authors | Fleischer, S. | Author | |
| Liu, Z. H. | Author | ||
| Lai, P. T. | Author | ||
| Ko, P. K. | Author | ||
| Cheng, Y. C. | Author | ||
| Year | 1991 (December 2) | Volume | 59 |
| Issue | 23 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.105826Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8496679 | Long-form Identifier | mindat:1:5:8496679:1 |
| GUID | 0 | ||
| Full Reference | Fleischer, S., Liu, Z. H., Lai, P. T., Ko, P. K., Cheng, Y. C. (1991) Off‐state leakage currents in n‐channel metal‐oxide‐semiconductor field‐effect transistors with 10‐nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric. Applied Physics Letters, 59 (23). 3006-3008 doi:10.1063/1.105826 | ||
| Plain Text | Fleischer, S., Liu, Z. H., Lai, P. T., Ko, P. K., Cheng, Y. C. (1991) Off‐state leakage currents in n‐channel metal‐oxide‐semiconductor field‐effect transistors with 10‐nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric. Applied Physics Letters, 59 (23). 3006-3008 doi:10.1063/1.105826 | ||
| In | (1991, December) Applied Physics Letters Vol. 59 (23) AIP Publishing | ||
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