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Okumura, H., Misawa, S., Yoshida, S. (1991) Epitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy. Applied Physics Letters, 59 (9). 1058-1060 doi:10.1063/1.106344

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy
JournalApplied Physics Letters
AuthorsOkumura, H.Author
Misawa, S.Author
Yoshida, S.Author
Year1991 (August 26)Volume59
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.106344Search in ResearchGate
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Mindat Ref. ID8497629Long-form Identifiermindat:1:5:8497629:3
GUID0
Full ReferenceOkumura, H., Misawa, S., Yoshida, S. (1991) Epitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy. Applied Physics Letters, 59 (9). 1058-1060 doi:10.1063/1.106344
Plain TextOkumura, H., Misawa, S., Yoshida, S. (1991) Epitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy. Applied Physics Letters, 59 (9). 1058-1060 doi:10.1063/1.106344
In(1991, August) Applied Physics Letters Vol. 59 (9) AIP Publishing

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Yoshida, S., Okumura, H., Misawa, S., Sakuma, E. (1992) Hetero-epitaxial growth of cubic GaN on GaAs by gas-source molecular beam epitaxy. Surface Science, 267 (1). 50-53 doi:10.1016/0039-6028(92)91086-q
Okumura, H., Misawa, S., Okahisa, T., Yoshida, S. (1994) Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen source. Journal of Crystal Growth, 136 (1). 361-365 doi:10.1016/0022-0248(94)90440-5
Okumura, H., Yoshida, S., Misawa, S., Sakuma, E. (1992) Epitaxial growth of GaAs and GaN by gas source molecular beam epitaxy using organic group V compounds. Journal of Crystal Growth, 120 (1). 114-118 doi:10.1016/0022-0248(92)90373-q
Tsuchiya, Harutoshi, Okahisa, Takuji, Hasegawa, Fumio, Okumura, Hajime, Yoshida, Sadafumi (1994) Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 33. 1747-1752 doi:10.1143/jjap.33.1747
Okumura, H., Hamaguchi, H., Feuillet, G., Ishida, Y., Yoshida, S. (1998) Arsenic surfactant effects and arsenic mediated molecular beam epitaxial growth for cubic GaN. Applied Physics Letters, 72 (23). 3056-3058 doi:10.1063/1.121539
Hacke, P., Feuillet, G., Okumura, H., Yoshida, S. (1996) Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal‐phase GaN by molecular beam epitaxy. Applied Physics Letters, 69 (17). 2507-2509 doi:10.1063/1.117722
Nikishin, S. A., Antipov, V. G., Ruvimov, S. S., Seryogin, G. A., Temkin, H. (1996) Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine. Applied Physics Letters, 69 (21). 3227-3229 doi:10.1063/1.118018
Okumura, H., Yoshida, S., Okahisa, T. (1994) Optical properties near the band gap on hexagonal and cubic GaN. Applied Physics Letters, 64 (22). 2997-2999 doi:10.1063/1.111383
Hacke, P., Feuillet, G., Okumura, H., Yoshida, S. (1997) Stability of surface reconstructions on hexagonal GaN grown by molecular beam epitaxy. Journal of Crystal Growth, 175. 94-99 doi:10.1016/s0022-0248(96)01174-8
Tsuchiya, Harutoshi, Hasegawa, Fumio, Okumura, Hajime, Yoshida, Sadafumi (1994) Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates. Japanese Journal of Applied Physics, 33. 6448-6453 doi:10.1143/jjap.33.6448
Tanaka, M., Sakakibara, H., Nishinaga, T. (1991) Molecular beam epitaxial growth and characterization of CoAl on AlAs/GaAs. Applied Physics Letters, 59 (24). 3115-3117 doi:10.1063/1.105756
 
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