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Hu, Kezhong, Chen, Li, Madhukar, Anupam, Chen, Ping, Rajkumar, K. C., Kaviani, Kian, Karim, Zaheed, Kyriakakis, Chris, Tanguay, Armand R. (1991) High contrast ratio asymmetric Fabry–Perot reflection light modulator based on GaAs/InGaAs multiple quantum wells. Applied Physics Letters, 59 (9). 1108-1110 doi:10.1063/1.106359

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Reference TypeJournal (article/letter/editorial)
TitleHigh contrast ratio asymmetric Fabry–Perot reflection light modulator based on GaAs/InGaAs multiple quantum wells
JournalApplied Physics Letters
AuthorsHu, KezhongAuthor
Chen, LiAuthor
Madhukar, AnupamAuthor
Chen, PingAuthor
Rajkumar, K. C.Author
Kaviani, KianAuthor
Karim, ZaheedAuthor
Kyriakakis, ChrisAuthor
Tanguay, Armand R.Author
Year1991 (August 26)Volume59
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.106359Search in ResearchGate
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Mindat Ref. ID8497660Long-form Identifiermindat:1:5:8497660:0
GUID0
Full ReferenceHu, Kezhong, Chen, Li, Madhukar, Anupam, Chen, Ping, Rajkumar, K. C., Kaviani, Kian, Karim, Zaheed, Kyriakakis, Chris, Tanguay, Armand R. (1991) High contrast ratio asymmetric Fabry–Perot reflection light modulator based on GaAs/InGaAs multiple quantum wells. Applied Physics Letters, 59 (9). 1108-1110 doi:10.1063/1.106359
Plain TextHu, Kezhong, Chen, Li, Madhukar, Anupam, Chen, Ping, Rajkumar, K. C., Kaviani, Kian, Karim, Zaheed, Kyriakakis, Chris, Tanguay, Armand R. (1991) High contrast ratio asymmetric Fabry–Perot reflection light modulator based on GaAs/InGaAs multiple quantum wells. Applied Physics Letters, 59 (9). 1108-1110 doi:10.1063/1.106359
In(1991, August) Applied Physics Letters Vol. 59 (9) AIP Publishing

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Hu, Kezhong, Chen, Li, Madhukar, Anupam, Chen, Ping, Kyriakakis, Chris, Karim, Zaheed, Tanguay, Armand R. (1991) Inverted cavity GaAs/InGaAs asymmetric Fabry–Perot reflection modulator. Applied Physics Letters, 59 (14). 1664-1666 doi:10.1063/1.106261
Hu, Kezhong, Chen, Li, Madhukar, Anupam, Chen, Ping, Kyriakakis, Chris, Karim, Zaheed, Tanguay, Armand R. (1991) Erratum: Inverted cavity GaAs/InGaAs asymmetric Fabry–Perot reflection modulator [Appl. Phys. Lett. 59, 1664 (1991)]. Applied Physics Letters, 59 (27). 3660 doi:10.1063/1.106376
Chen, Li, Hu, Kezhong, Kapre, R. M., Madhukar, A. (1992) High contrast ratio self‐electro‐optic effect devices based on inverted InGaAs/GaAs asymmetric Fabry–Perot modulator. Applied Physics Letters, 60 (4). 422-424 doi:10.1063/1.106622
Chen, Li, Kapre, R. M., Hu, Kezhong, Madhukar, A. (1991) High‐contrast optically bistable optoelectronic switch based on InGaAs/GaAs (100) asymmetric Fabry–Perot modulator, detector, and resonant tunneling diode. Applied Physics Letters, 59 (13). 1523-1525 doi:10.1063/1.106270
Karim, Z., Kyriakakis, C., Tanguay, A. R., Hu, K., Chen, L., Madhukar, A. (1994) Externally deposited phase‐compensating dielectric mirrors for asymmetric Fabry–Perot cavity tuning. Applied Physics Letters, 64 (22). 2913-2915 doi:10.1063/1.111409
Jin, R., Khitrova, G., Gibbs, H. M., Lowry, C., Peyghambarian, N. (1991) High contrast, submilliwatt power InGaAs/GaAs strained‐layer multiple‐quantum‐well asymmetric reflection modulator. Applied Physics Letters, 59 (25). 3216-3218 doi:10.1063/1.105736
Karim, Z., Kyriakakis, C., Tanguay, A. R., Cartland, R. F., Hu, K., Chen, L., Madhukar, A. (1995) Post‐growth tuning of inverted cavity InGaAs/AlGaAs spatial light modulators using phase compensating dielectric mirrors. Applied Physics Letters, 66 (21). 2774-2776 doi:10.1063/1.113471
Madhukar, A., Rajkumar, K. C., Chen, Li, Guha, S., Kaviani, K., Kapre, R. (1990) Realization of low defect density, ultrathick, strained InGaAs/GaAs multiple quantum well structures via growth on patterned GaAs (100) substrates. Applied Physics Letters, 57 (19). 2007-2009 doi:10.1063/1.103992
Kaviani, Kian, Hu, Kezhong, Xie, Qianghua, Madhukar, Anupam (1993) Realization of high performance doped-channel MISFETs in highly strained AlGaAs/InGaAs/AlGaAs based quantum wells. Journal of Crystal Growth, 127 (1). 68-72 doi:10.1016/0022-0248(93)90579-l
Yang, Ching‐Mei, Mahgerefteh, Daniel, Garmire, E., Chen, Li, Hu, Kezhong, Madhukar, A. (1994) Sweep‐out times of electrons and holes in an InGaAs/GaAs multiple quantum well modulator. Applied Physics Letters, 65 (8). 995-997 doi:10.1063/1.112173
Rajkumar, K. C., Kaviani, K., Chen, J., Chen, P., Madhukar, A. (1992) Nanofeatures on GaAs (111)B via photolithography. Applied Physics Letters, 60 (7). 850-852 doi:10.1063/1.106534
 
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