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Poudoulec, A., Guenais, B., D’Anterroches, C., Auvray, P., Baudet, M., Regreny, A. (1992) Comparative study of interface structure in GaAs/AlAs superlattices grown by molecular beam epitaxy on (001) GaAs substrates misoriented towards (111)Gaor (111)Asplane. Applied Physics Letters, 60 (19). 2406-2408 doi:10.1063/1.106987

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Reference TypeJournal (article/letter/editorial)
TitleComparative study of interface structure in GaAs/AlAs superlattices grown by molecular beam epitaxy on (001) GaAs substrates misoriented towards (111)Gaor (111)Asplane
JournalApplied Physics Letters
AuthorsPoudoulec, A.Author
Guenais, B.Author
D’Anterroches, C.Author
Auvray, P.Author
Baudet, M.Author
Regreny, A.Author
Year1992 (May 11)Volume60
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.106987Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8498547Long-form Identifiermindat:1:5:8498547:7
GUID0
Full ReferencePoudoulec, A., Guenais, B., D’Anterroches, C., Auvray, P., Baudet, M., Regreny, A. (1992) Comparative study of interface structure in GaAs/AlAs superlattices grown by molecular beam epitaxy on (001) GaAs substrates misoriented towards (111)Gaor (111)Asplane. Applied Physics Letters, 60 (19). 2406-2408 doi:10.1063/1.106987
Plain TextPoudoulec, A., Guenais, B., D’Anterroches, C., Auvray, P., Baudet, M., Regreny, A. (1992) Comparative study of interface structure in GaAs/AlAs superlattices grown by molecular beam epitaxy on (001) GaAs substrates misoriented towards (111)Gaor (111)Asplane. Applied Physics Letters, 60 (19). 2406-2408 doi:10.1063/1.106987
In(1992, May) Applied Physics Letters Vol. 60 (19) AIP Publishing

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Auvray, P., Poudoulec, A., Baudet, M., Guenais, B., Regreny, A., d'Anterroches, C., Massies, J. (1991) Interface roughness of GaAs/AlAs superlattices MBE-grown on vicinal surfaces. Applied Surface Science, 50. 109-114 doi:10.1016/0169-4332(91)90147-c
Guenais, B., Poudoulec, A., Auvray, P., Baudet, M., Regreny, A., Lambert, B. (1988) Structural features of MBE grown very short period GaAs-AlAs superlattices. Journal of Crystal Growth, 88 (1). 125-134 doi:10.1016/s0022-0248(98)90014-8
Poudoulec, A., Guenais, B., D'Anterroches, C., Regreny, A. (1990) Interface structure of a GaAs-AlAs superlattice MBE grown on a GaAs vicinal surface. Journal of Crystal Growth, 100 (3). 529-538 doi:10.1016/0022-0248(90)90254-i
Guivarc'h, A., Caulet, J., Guenais, B., Ballini, Y., Guérin, R., Poudoulec, A., Regreny, A. (1989) Growth of Ni3Ga2, NiGa and Ni2Ga3 on GaAs (001) and (111) in a molecular beam epitaxy system. Journal of Crystal Growth, 95 (1). 427-430 doi:10.1016/0022-0248(89)90435-1
Auvray, P., Baudet, M., Regreny, A. (1989) X-ray diffraction effects in Ga and Al arsenide structures MBE-grown on slightly misoriented GaAs (001) substrates. Journal of Crystal Growth, 95 (1). 288-291 doi:10.1016/0022-0248(89)90403-x
Auvray, P., Baudet, M., Regreny, A. (1987) X‐ray diffraction study of intentionally disordered GaAlAs‐GaAs superlattices. Journal of Applied Physics, 62 (2). 456-460 doi:10.1063/1.339821
Kervarec, J., Baudet, M., Auvray, P., Regreny, A. (1984) The structure of MBE grown (Ga1−xAlxAs)n1(GaAs)n2/ GaAs(001) superlattices as determined by means of X-ray diffraction techniques. Acta Crystallographica Section A Foundations of Crystallography, 40. doi:10.1107/s0108767384093880
Guivarc’h, A., Secoué, M., Guenais, B. (1988) Growth of RhGa on GaAs (001) in a molecular beam epitaxy system. Applied Physics Letters, 52 (12). 948-950 doi:10.1063/1.99237
Yang, K., Schowalter, L. J. (1992) Surface reconstruction phase diagram and growth on GaAs(111)B substrates by molecular beam epitaxy. Applied Physics Letters, 60 (15). 1851-1853 doi:10.1063/1.107188
Rajkumar, K. C., Chen, P., Madhukar, A. (1991) ‘‘A transmission electron microscope study of twin structure in GaAs/GaAs (111)B grown via molecular‐beam epitaxy’’. Journal of Applied Physics, 69 (4). 2219-2223 doi:10.1063/1.348699
Zhou, T. C., Zhou, X. C., Kirk, W. P. (1997) A comparative study of Si doping in GaAs layers grown by molecular beam epitaxy on GaAs(110) and GaAs(001) surfaces. Journal of Applied Physics, 81 (11). 7372-7375 doi:10.1063/1.365437
 
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