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Abernathy, C. R., Wisk, P. W., Bohling, D. A., Muhr, G. T. (1992) Growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy using tris‐dimethylaminoarsenic. Applied Physics Letters, 60 (19). 2421-2423 doi:10.1063/1.106992

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of GaAs and AlGaAs by metalorganic molecular beam epitaxy using tris‐dimethylaminoarsenic
JournalApplied Physics Letters
AuthorsAbernathy, C. R.Author
Wisk, P. W.Author
Bohling, D. A.Author
Muhr, G. T.Author
Year1992 (May 11)Volume60
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.106992Search in ResearchGate
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Mindat Ref. ID8498557Long-form Identifiermindat:1:5:8498557:4
GUID0
Full ReferenceAbernathy, C. R., Wisk, P. W., Bohling, D. A., Muhr, G. T. (1992) Growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy using tris‐dimethylaminoarsenic. Applied Physics Letters, 60 (19). 2421-2423 doi:10.1063/1.106992
Plain TextAbernathy, C. R., Wisk, P. W., Bohling, D. A., Muhr, G. T. (1992) Growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy using tris‐dimethylaminoarsenic. Applied Physics Letters, 60 (19). 2421-2423 doi:10.1063/1.106992
In(1992, May) Applied Physics Letters Vol. 60 (19) AIP Publishing

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Abernathy, C. R., Jordan, A. S., Pearton, S. J., Hobson, W. S., Bohling, D. A., Muhr, G. T. (1990) Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane. Applied Physics Letters, 56 (26). 2654-2656 doi:10.1063/1.102866
Abernathy, C. R., Wisk, P. W., Jones, A. C., Rushworth, S. A. (1992) Comparison of triethylgallium and tri‐isobutylgallium for growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy. Applied Physics Letters, 61 (2). 180-182 doi:10.1063/1.108211
Abernathy, C. R., MacKenzie, J. D., Hobson, W. S., Wisk, P. W. (1994) Carbon doping of AlAs using CCl4and CBr4during growth by metalorganic molecular‐beam epitaxy. Applied Physics Letters, 65 (17). 2205-2207 doi:10.1063/1.112762
Abernathy, C. R., Wisk, P. W., Pearton, S. J., Hobson, W. S., Fuoss, P. H., Lamelas, F. J., Chu, S. N. G., Ren, F. (1992) Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 60 (11). 1339-1341 doi:10.1063/1.107336
Abernathy, C. R., Ren, F., Pearton, S. J., Fullowan, T., Wisk, P., Lothian, J. (1992) Growth ofPnpheterojunction bipolar transistor structures by metalorganic molecular beam epitaxy. Journal of Applied Physics, 71 (3). 1219-1223 doi:10.1063/1.351291
Abernathy, C. R., Wisk, P. W., Ren, F., Pearton, S. J., Jones, A. C., Rushworth, S. A. (1993) Growth of InGaP by metalorganic molecular beam epitaxy using novel Ga sources. Journal of Applied Physics, 73 (5). 2283-2287 doi:10.1063/1.353133
Abernathy, C. R., Wisk, P. W., Pearton, S. J., Ren, F. (1993) Mg doping of InP and InGaAs grown by metalorganic molecular beam epitaxy using bis‐cyclopentadienyl magnesium. Applied Physics Letters, 62 (3). 258-260 doi:10.1063/1.108982
Abernathy, C.R., Wisk, P.W., Pearton, S.J., Ren, F., Bohling, D.A., Muhr, G.T. (1992) Alternative group V sources for growth of GaAs and AlGaAs by MOMBE (CBE). Journal of Crystal Growth, 124 (1). 64-69 doi:10.1016/0022-0248(92)90438-o
Abernathy, C.R., Pearton, S.J., Baiocchi, F.A., Ambrose, T., Jordan, A.S., Bohling, D.A., Muhr, G.T. (1991) Effect of source chemistry and growth parameters on AlGaAs grown by metalorganic molecular beam epitaxy. Journal of Crystal Growth, 110 (3). 457-471 doi:10.1016/0022-0248(91)90283-b
Abernathy, C.R., Ren, F., Pearton, S.J., Wisk, P.W., Bohling, D.A., Muhr, G.T., Jones, A.C., Stavola, M., Kozuch, D.M. (1994) The impact of impurity incorporation on heterojunction bipolar transistors grown by metalorganic molecular beam epitaxy. Journal of Crystal Growth, 136 (1). 11-17 doi:10.1016/0022-0248(94)90377-8
Miller, T. J., Nathan, M. I. (1992) Al/Si/AlGaAs/GaAs Schottky barriers by molecular beam epitaxy. Applied Physics Letters, 61 (19). 2332-2334 doi:10.1063/1.108234
 
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