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Ni, W.‐X., Henry, A., Larsson, M. I., Joelsson, K., Hansson, G. V. (1994) High quality Si/Si1−xGexlayered structures grown using a mass‐spectrometry controlled electron‐beam evaporation system. Applied Physics Letters, 65 (14). 1772-1774 doi:10.1063/1.112913

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Reference TypeJournal (article/letter/editorial)
TitleHigh quality Si/Si1−xGexlayered structures grown using a mass‐spectrometry controlled electron‐beam evaporation system
JournalApplied Physics Letters
AuthorsNi, W.‐X.Author
Henry, A.Author
Larsson, M. I.Author
Joelsson, K.Author
Hansson, G. V.Author
Year1994 (October 3)Volume65
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.112913Search in ResearchGate
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Mindat Ref. ID8509783Long-form Identifiermindat:1:5:8509783:0
GUID0
Full ReferenceNi, W.‐X., Henry, A., Larsson, M. I., Joelsson, K., Hansson, G. V. (1994) High quality Si/Si1−xGexlayered structures grown using a mass‐spectrometry controlled electron‐beam evaporation system. Applied Physics Letters, 65 (14). 1772-1774 doi:10.1063/1.112913
Plain TextNi, W.‐X., Henry, A., Larsson, M. I., Joelsson, K., Hansson, G. V. (1994) High quality Si/Si1−xGexlayered structures grown using a mass‐spectrometry controlled electron‐beam evaporation system. Applied Physics Letters, 65 (14). 1772-1774 doi:10.1063/1.112913
In(1994, October) Applied Physics Letters Vol. 65 (14) AIP Publishing

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Larsson, Mats I., Ni, Wei‐Xin, Joelsson, Kenneth, Hansson, Göran V. (1994) Growth of high quality Ge films on Si(111) using Sb as surfactant. Applied Physics Letters, 65 (11). 1409-1411 doi:10.1063/1.112067
Joelsson, K. B., Ni, W.-X, Pozina, G., Radamson, H. H., Hansson, G. V. (1997) Si1−yCy/Si(001) heterostructures made by sublimation of SiC during silicon molecular beam epitaxy. Applied Physics Letters, 71 (5). 653-655 doi:10.1063/1.119819
Buyanova, I. A., Chen, W. M., Henry, A., Ni, W.‐X., Hansson, G. V., Monemar, B. (1995) Properties of deep photoluminescence bands in SiGe/Si quantum structures grown by molecular beam epitaxy. Applied Physics Letters, 67 (12). 1642-1644 doi:10.1063/1.115042
Chen, W. M., Buyanova, I. A., Henry, A., Ni, W.‐X., Hansson, G. V., Monemar, B. (1996) Nonradiative defects in Si and SiGe/Si heterostructures grown by molecular beam epitaxy. Applied Physics Letters, 68 (9). 1256-1258 doi:10.1063/1.115944
Ni, W.-X., Joelsson, K. B., Du, C.-X., Buyanova, I. A., Pozina, G., Chen,, W. M., Hansson, G. V., Monemar, B., Cardenas, J., Svensson, B. G. (1997) Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission. Applied Physics Letters, 70 (25). 3383-3385 doi:10.1063/1.119178
Buyanova, I. A., Chen, W. M., Pozina, G., Monemar, B., Ni, W.-X., Hansson, G. V. (1997) Mechanism for thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy: Role of nonradiative defects. Applied Physics Letters, 71 (25). 3676-3678 doi:10.1063/1.120478
Ni, W.‐X., Hansson, G. V., Buyanova, I. A., Henry, A., Chen, W. M., Momemar, B. (1996) Influence of ion bombardment on Si and SiGe films during molecular beam epitaxy growth. Applied Physics Letters, 68 (2). 238-240 doi:10.1063/1.116472
Joelsson, K. B., Fu, Y., Ni, W.-X., Hansson, G. V. (1997) Hall factor and drift mobility for hole transport in strained Si1−xGexalloys. Journal of Applied Physics, 81 (3). 1264-1269 doi:10.1063/1.363906
Radamson, H. H., Sardela, M. R., Nur, O., Willander, M., Sernelius, B. E., Ni, W.‐X., Hansson, G. V. (1994) Electron mobility enhancement in Si using doubly δ‐doped layers. Applied Physics Letters, 64 (14). 1842-1844 doi:10.1063/1.111773
Cardenas, J., Svensson, B. G., Ni, W.-X., Joelsson, K. B., Hansson, G. V. (1998) Injection of self-interstitials during sputter depth profiling of Si at room temperature. Applied Physics Letters, 73 (21). 3088-3089 doi:10.1063/1.122681
Gomes, P. F., Iikawa, F, Cerdeira, F., Larsson, M., Elfving, A., Hansson, G. V., Ni, W.-X., Holtz, P.-O. (2007) Type-I optical emissions in Ge∕Si quantum dots. Applied Physics Letters, 91 (5). 51917pp. doi:10.1063/1.2764113
 
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