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Harris, C. I., Syväjärvi, M., Bergman, J. P., Kordina, O., Henry, A., Monemar, B., Janzén, E. (1994) Time‐resolved decay of the blue emission in porous silicon. Applied Physics Letters, 65 (19). 2451-2453 doi:10.1063/1.112704

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Reference TypeJournal (article/letter/editorial)
TitleTime‐resolved decay of the blue emission in porous silicon
JournalApplied Physics Letters
AuthorsHarris, C. I.Author
Syväjärvi, M.Author
Bergman, J. P.Author
Kordina, O.Author
Henry, A.Author
Monemar, B.Author
Janzén, E.Author
Year1994 (November 7)Volume65
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.112704Search in ResearchGate
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Mindat Ref. ID8510189Long-form Identifiermindat:1:5:8510189:6
GUID0
Full ReferenceHarris, C. I., Syväjärvi, M., Bergman, J. P., Kordina, O., Henry, A., Monemar, B., Janzén, E. (1994) Time‐resolved decay of the blue emission in porous silicon. Applied Physics Letters, 65 (19). 2451-2453 doi:10.1063/1.112704
Plain TextHarris, C. I., Syväjärvi, M., Bergman, J. P., Kordina, O., Henry, A., Monemar, B., Janzén, E. (1994) Time‐resolved decay of the blue emission in porous silicon. Applied Physics Letters, 65 (19). 2451-2453 doi:10.1063/1.112704
In(1994, November) Applied Physics Letters Vol. 65 (19) AIP Publishing

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Bergman, J. P., Harris, C. I., Kordina, O., Henry, A., Janzén, E. (1994) Dynamics of the nitrogen-bound excitons in 6HSiC. Physical Review B, 50 (12) 8305-8309 doi:10.1103/physrevb.50.8305
Henry, A., Kordina, O., Hallin, C., Hemmingsson, C., Janzén, E. (1994) Photoluminescence determination of the nitrogen doping concentration in 6H‐SiC. Applied Physics Letters, 65 (19). 2457-2459 doi:10.1063/1.112706
Son, N. T., Sörman, E., Chen, W. M., Kordina, O., Monemar, B., Janzén, E. (1994) Possible lifetime‐limiting defect in 6H SiC. Applied Physics Letters, 65 (21). 2687-2689 doi:10.1063/1.112962
Konstantinov, A. O., Harris, C. I., Janzén, E. (1994) Electrical properties and formation mechanism of porous silicon carbide. Applied Physics Letters, 65 (21). 2699-2701 doi:10.1063/1.112610
Kordina, O., Bergman, J. P., Henry, A., Janzén, E., Savage, S., André, J., Ramberg, L. P., Lindefelt, U., Hermansson, W., Bergman, K. (1995) A 4.5 kV 6H silicon carbide rectifier. Applied Physics Letters, 67 (11). 1561-1563 doi:10.1063/1.114734
Konstantinov, A. O., Henry, A., Harris, C. I., Janzén, E. (1995) Photoluminescence studies of porous silicon carbide. Applied Physics Letters, 66 (17). 2250-2252 doi:10.1063/1.113182
Kordina, O., Bergman, J. P., Henry, A., Janzén, E. (1995) Long minority carrier lifetimes in 6H SiC grown by chemical vapor deposition. Applied Physics Letters, 66 (2). 189-191 doi:10.1063/1.113130
Son, N. T., Kordina, O., Konstantinov, A. O., Chen, W. M., Sörman, E., Monemar, B., Janzén, E. (1994) Electron effective masses and mobilities in high‐purity 6H–SiC chemical vapor deposition layers. Applied Physics Letters, 65 (25). 3209-3211 doi:10.1063/1.112956
Godlewski, M., Harris, C. I., Bergman, J. P., Monemar, B., Waag, A. (1994) Low temperature mobility limiting defects in CdTe/CdMnTe multi‐quantum‐well structures. Applied Physics Letters, 65 (17). 2168-2170 doi:10.1063/1.112751
Kordina, O., Henry, A., Bergman, J. P., Son, N. T., Chen, W. M., Hallin, C., Janzén, E. (1995) High quality 4H‐SiC epitaxial layers grown by chemical vapor deposition. Applied Physics Letters, 66 (11). 1373-1375 doi:10.1063/1.113205
Bergman, J. P., Kordina, O., Janzén, E. (1997) Time Resolved Spectroscopy of Defects in SiC. physica status solidi (a), 162 (1). 65-77 doi:10.1002/1521-396x(199707)162:1<65::aid-pssa65>3.0.co;2-2
 
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