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Parker, T. R., Fawcett, A. H., Phillips, C. C., Majumdar, S., Fawcett, P. N. (1994) Gatable ultrafast field‐assisted photoemission to λ=1.55 μm from In0.5Ga0.5As heterostructures. Applied Physics Letters, 65 (21). 2711-2713 doi:10.1063/1.112566

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Reference TypeJournal (article/letter/editorial)
TitleGatable ultrafast field‐assisted photoemission to λ=1.55 μm from In0.5Ga0.5As heterostructures
JournalApplied Physics Letters
AuthorsParker, T. R.Author
Fawcett, A. H.Author
Phillips, C. C.Author
Majumdar, S.Author
Fawcett, P. N.Author
Year1994 (November 21)Volume65
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.112566Search in ResearchGate
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Mindat Ref. ID8510407Long-form Identifiermindat:1:5:8510407:9
GUID0
Full ReferenceParker, T. R., Fawcett, A. H., Phillips, C. C., Majumdar, S., Fawcett, P. N. (1994) Gatable ultrafast field‐assisted photoemission to λ=1.55 μm from In0.5Ga0.5As heterostructures. Applied Physics Letters, 65 (21). 2711-2713 doi:10.1063/1.112566
Plain TextParker, T. R., Fawcett, A. H., Phillips, C. C., Majumdar, S., Fawcett, P. N. (1994) Gatable ultrafast field‐assisted photoemission to λ=1.55 μm from In0.5Ga0.5As heterostructures. Applied Physics Letters, 65 (21). 2711-2713 doi:10.1063/1.112566
In(1994, November) Applied Physics Letters Vol. 65 (21) AIP Publishing

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Takahashi, R., Kawamura, Y., Kagawa, T., Iwamura, H. (1994) Ultrafast 1.55‐μm photoresponses in low‐temperature‐grown InGaAs/InAlAs quantum wells. Applied Physics Letters, 65 (14). 1790-1792 doi:10.1063/1.112870
Lafontaine, H., Rowell, N. L., Janz, S. (1998) Phonon-resolved photoluminescence at λ=1.55 μm from undulating Si0.5Ge0.5 epitaxial layers. Applied Physics Letters, 72 (19). 2430-2432 doi:10.1063/1.121395
Chen, Y.-C., Raravikar, N. R., Schadler, L. S., Ajayan, P. M., Zhao, Y.-P., Lu, T.-M., Wang, G.-C., Zhang, X.-C. (2002) Ultrafast optical switching properties of single-wall carbon nanotube polymer composites at 1.55 μm. Applied Physics Letters, 81 (6). 975-977 doi:10.1063/1.1498007
Parker, T. R., Phillips, C. C., May, P. G. (1995) AlxGa1−xAs intervalley scattering rates from field-assisted photoemission spectroscopy. Physical Review B, 51 (7) 4264-4271 doi:10.1103/physrevb.51.4264
Heber, J. D., Gmachl, C., Ng, H. M., Cho, A. Y. (2002) Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μm wavelength in GaN/AlGaN heterostructures. Applied Physics Letters, 81 (7). 1237-1239 doi:10.1063/1.1500412
Driscoll, D. C., Hanson, M. P., Gossard, A. C., Brown, E. R. (2005) Ultrafast photoresponse at 1.55 μm in InGaAs with embedded semimetallic ErAs nanoparticles. Applied Physics Letters, 86 (5). 51908pp. doi:10.1063/1.1852092
Ashley, T., Elliott, C. T., Gordon, N. R., Hall, R. S., Maxey, C. D., Matthews, B. E. (1994) Room‐temperature electroluminescence at wavelengths of 5–7 μm from HgCdTe heterostructure diodes. Applied Physics Letters, 65 (18). 2314-2316 doi:10.1063/1.112728
Vardi, A., Kheirodin, N., Nevou, L., Machhadani, H., Vivien, L., Crozat, P., Tchernycheva, M., Colombelli, R., Julien, F. H., Guillot, F., Bougerol, C., Monroy, E., Schacham, S., Bahir, G. (2008) High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm. Applied Physics Letters, 93 (19). 193509pp. doi:10.1063/1.3021376
Huang, H. C., Yee, S. (1991) Change in refractive index forp‐type GaAs at λ=1.06, 1.3, and 1.55 μm due to free carriers. Journal of Applied Physics, 70 (2). 925-929 doi:10.1063/1.349600
Tang, P. J. P., Hardaway, H., Heber, J., Phillips, C. C., Pullin, M. J., Stradling, R. A., Yuen, W. T., Hart, L. (1998) Efficient 300 K light-emitting diodes at λ∼5 and ∼8 μm from InAs/In(As1−xSbx) single quantum wells. Applied Physics Letters, 72 (26). 3473-3475 doi:10.1063/1.121670
Wilson, R. G., Schwartz, R. N., Abernathy, C. R., Pearton, S. J., Newman, N., Rubin, M., Fu, T., Zavada, J. M. (1994) 1.54‐μm photoluminescence from Er‐implanted GaN and AlN. Applied Physics Letters, 65 (8). 992-994 doi:10.1063/1.112172
 
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