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Waldrop, J. R., Grant, R. W. (1996) Measurement of AlN/GaN (0001) heterojunction band offsets by x‐ray photoemission spectroscopy. Applied Physics Letters, 68 (20). 2879-2881 doi:10.1063/1.116355

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Reference TypeJournal (article/letter/editorial)
TitleMeasurement of AlN/GaN (0001) heterojunction band offsets by x‐ray photoemission spectroscopy
JournalApplied Physics Letters
AuthorsWaldrop, J. R.Author
Grant, R. W.Author
Year1996 (May 13)Volume68
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.116355Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8516056Long-form Identifiermindat:1:5:8516056:1
GUID0
Full ReferenceWaldrop, J. R., Grant, R. W. (1996) Measurement of AlN/GaN (0001) heterojunction band offsets by x‐ray photoemission spectroscopy. Applied Physics Letters, 68 (20). 2879-2881 doi:10.1063/1.116355
Plain TextWaldrop, J. R., Grant, R. W. (1996) Measurement of AlN/GaN (0001) heterojunction band offsets by x‐ray photoemission spectroscopy. Applied Physics Letters, 68 (20). 2879-2881 doi:10.1063/1.116355
In(1996, May) Applied Physics Letters Vol. 68 (20) AIP Publishing

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Waldrop, J. R., Grant, R. W., Kraut, E. A. (1989) Measurement of GaAs/InP and InAs/InP heterojunction band offsets by x‐ray photoemission spectroscopy. Applied Physics Letters, 54 (19). 1878-1880 doi:10.1063/1.101246
Waldrop, J. R., Kraut, E. A., Farley, C. W., Grant, R. W. (1991) Measurement of InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction band offsets by x‐ray photoemission spectroscopy. Journal of Applied Physics, 69 (1). 372-378 doi:10.1063/1.347724
Martin, G., Botchkarev, A., Rockett, A., Morkoç, H. (1996) Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy. Applied Physics Letters, 68 (18). 2541-2543 doi:10.1063/1.116177
Chen, J.-J., Gila, B. P., Hlad, M., Gerger, A., Ren, F., Abernathy, C. R., Pearton, S. J. (2006) Determination of MgO∕GaN heterojunction band offsets by x-ray photoelectron spectroscopy. Applied Physics Letters, 88 (4). 42113pp. doi:10.1063/1.2170140
Chen, Jau-Jiun, Ren, F., Li, Yuanjie, Norton, D. P., Pearton, S. J., Osinsky, A., Dong, J. W., Chow, P. P., Weaver, J. F. (2005) Measurement of Zn0.95Cd0.05O∕ZnO (0001) heterojunction band offsets by x-ray photoelectron spectroscopy. Applied Physics Letters, 87 (19). 192106pp. doi:10.1063/1.2128477
King, S. W., Carlson, E. P., Therrien, R. J., Christman, J. A., Nemanich, R. J., Davis, R. F. (1999) X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms. Journal of Applied Physics, 86 (10). 5584-5593 doi:10.1063/1.371564
Hirakawa, K., Hashimoto, Y., Ikoma, T. (1990) Orientation independence of heterojunction‐band offsets at GaAs‐AlAs heterointerfaces characterized by x‐ray photoemission spectroscopy. Applied Physics Letters, 57 (24). 2555-2557 doi:10.1063/1.103815
Martin, G., Strite, S., Botchkarev, A., Agarwal, A., Rockett, A., Morkoç, H., Lambrecht, W. R. L., Segall, B. (1994) Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy. Applied Physics Letters, 65 (5). 610-612 doi:10.1063/1.112247
Wang, M. W., Swenberg, J. F., Phillips, M. C., Yu, E. T., McCaldin, J. O., Grant, R. W., McGill, T. C. (1994) X‐ray photoelectron spectroscopy measurement of valence‐band offsets for Mg‐based semiconductor compounds. Applied Physics Letters, 64 (25). 3455-3457 doi:10.1063/1.111239
Stewart, A. D., Gerger, A., Gila, B. P., Abernathy, C. R., Pearton, S. J. (2008) Determination of Sm2O3∕GaAs heterojunction band offsets by x-ray photoelectron spectroscopy. Applied Physics Letters, 92 (15). 153511pp. doi:10.1063/1.2911726
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