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Ueki, Takemi, Itsumi, Manabu, Takeda, Tadao (1997) Octahedral void defects observed in the bulk of Czochralski silicon. Applied Physics Letters, 70 (10). 1248-1250 doi:10.1063/1.118543

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Reference TypeJournal (article/letter/editorial)
TitleOctahedral void defects observed in the bulk of Czochralski silicon
JournalApplied Physics Letters
AuthorsUeki, TakemiAuthor
Itsumi, ManabuAuthor
Takeda, TadaoAuthor
Year1997 (March 10)Volume70
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.118543Search in ResearchGate
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Mindat Ref. ID8518178Long-form Identifiermindat:1:5:8518178:6
GUID0
Full ReferenceUeki, Takemi, Itsumi, Manabu, Takeda, Tadao (1997) Octahedral void defects observed in the bulk of Czochralski silicon. Applied Physics Letters, 70 (10). 1248-1250 doi:10.1063/1.118543
Plain TextUeki, Takemi, Itsumi, Manabu, Takeda, Tadao (1997) Octahedral void defects observed in the bulk of Czochralski silicon. Applied Physics Letters, 70 (10). 1248-1250 doi:10.1063/1.118543
In(1997, March) Applied Physics Letters Vol. 70 (10) AIP Publishing

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Ueki, Takemi, Itsumi, Manabu, Takeda, Tadao (1997) Octahedral Void Structure Observed in Grown-In Defects in the Bulk of Standard Czochralski-Si for MOS LSIs. Japanese Journal of Applied Physics, 36. 1781-1785 doi:10.1143/jjap.36.1781
Ueki, Takemi, Itsumi, Manabu, Takeda, Tadao (1998) Analysis of Side-Wall Structure of Grown-in Twin-Type Octahedral Defects in Czochralski Silicon. Japanese Journal of Applied Physics, 37. 1667-1670 doi:10.1143/jjap.37.1667
Itsumi, Manabu, Maeda, Masahiko, Ueki, Takemi, Tazawa, Satoshi (1999) Oxide ridge formed around octahedral void defects on (001)-oriented Czochralski silicon. Journal of Applied Physics, 86 (4). 2330-2333 doi:10.1063/1.371050
Itsumi, Manabu, Ueki, Takemi, Watanabe, Masaki, Yabumoto, Norikuni (1998) Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon. Japanese Journal of Applied Physics, 37. 1228-1235 doi:10.1143/jjap.37.1228
Ueki, Takemi, Itsumi, Manabu, Takeda, Tadao (1999) Carbon in Grown-in Defects in Czochralski Silicon and Its Influence on Gate-Oxide Defects. Japanese Journal of Applied Physics, 38. 5695-5699 doi:10.1143/jjap.38.5695
Ueki, Takemi, Itsumi, Manabu, Takeda, Tadao, Yoshida, Kiyokazu, Takaoka, Akio, Nakajima, Sigeru (1998) Shrinkage of Grown-in Defects in Czochralski Silicon During Thermal Annealing in Vacuum. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l771
Itsumi, Manabu, Ueki, Takemi, Yabumoto, Norikuni, Suzuki, Mineharu (1999) Octahedral void defects and related circular stains on thermal oxides. Journal of Applied Physics, 86 (3). 1322-1325 doi:10.1063/1.370889
Itsumi, Manabu, Akiya, Hideo, Tomita, Masato, Ueki, Takemi, Yamawaki, Masataka (1996) Impurity dependence of oxide defects in Czochralski silicon. Journal of Applied Physics, 80 (12). 6661-6665 doi:10.1063/1.363790
Itsumi, Manabu, Maeda, Masahiko, Ueki, Takemi (1998) Dependence of the density of defects in the oxide on Czochralski silicon on its thickness. Journal of Applied Physics, 84 (3). 1241-1245 doi:10.1063/1.368190
Itsumi, Manabu, Akiya, Hideo, Ueki, Takemi, Tomita, Masato, Yamawaki, Masataka (1995) The composition of octahedron structures that act as an origin of defects in thermal SiO2on Czochralski silicon. Journal of Applied Physics, 78 (10). 5984-5988 doi:10.1063/1.360603
Itsumi, Manabu, Maeda, Masahiko, Ohfuji, Shin-ichi, Ueki, Takemi (1999) Two Kinds of Impurity-related Mark on Thermal Oxides Originating in Octahedral Void Defects. Japanese Journal of Applied Physics, 38. 5720-5724 doi:10.1143/jjap.38.5720
 
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